新型四通带滤波器设计

基于多枝节加载四模谐振器,设计出一款新型结构简单的四频带通滤波器,其频带可控、损耗较小。通过改变谐振器中4个相对独立的谐振路径长度可对四个通带的中心频率进行调节。由于4条谐振路径复用微带传输线,因而滤波器的面积较小,为16.04 mm×23.51 mm(0.14λ_g×0.20λ_g)。经仿真与实物测试,4个通带中心频率分别为2.58/3.27/5.27/6.06 GHz,其插入损耗为1.02/1.31/0.93/1.66 dB,回波损耗皆高于15 dB。     

基于多节SIRs的新型四通带滤波器设计

提出了一种基于多节1/2波长SIRs的具有通带可控的紧凑型四通带滤波器。该滤波器由上下两个谐振器A和B组成,谐振器A由两节1/2波长SIRs中心加载一段短路枝节组成,控制第二和第三通带;谐振器B由三节1/2波长SIRs中心加载一段短路枝节组成,控制第一和第四通带,最终得到了尺寸为8.09 mm×14.12 mm(0.10λ_g×0.17λ_g)的四频带通滤波器。实验结果表明,该滤波器的通带可控并且满足低损耗的要求,4个通带的中心频率分别为2.22/3.66/5.63/7.52 GHz,插入损耗分别为0.32/0.41/1.38/0.43 dB,每个通带的回波损耗都优于20 dB,实验结果与理论分析一致。     

基于枝节加载谐振器的新型三频带通滤波器设计

提出了一种新型平面三频带通滤波器,该滤波器由一个加载短路枝节的阶梯阻抗谐振器,一对加载开路枝节的背靠背E型谐振器,以及包含源负载直接耦合的馈电结构组成.所采用的枝节加载谐振器的多模工作特性使滤波器的体积大大减小,同时每个通带的位置及其耦合特性都能够独立调谐.另外,通过源负载直接耦合引入通带两侧的传输零点,实现了滤波器良好的频率选择性.最后设计并加工了一款高选择性小型化三频带通滤波器,其三个通带的中心频率分别为2.0GHz,3.95GHz和6.35GHz,插入损耗均小于2.5dB,带内回波损耗均优于14dB,实验结果与仿真结果吻合良好.     

宽阻带小型化双频带通滤波器

文中提出了一种具有宽阻带的紧凑型双频带通滤波器,它采用了折叠短路枝节负载谐振器、紧凑型微 带单元谐振器(CMRC)和阶跃阻抗谐振器结构。由于多个谐振器产生了五个可控传输零点(TZ),该滤波器实现了两个 通带之间的良好隔离度以及宽阻带特性。制作并测试了尺寸紧凑的双频带通滤波器实验样品,测试结果显示,第一通 带和第二通带的中心频率/ 插入损耗分别为0. 66 GHz/0. 8 dB 和1. 73 GHz/0. 7 dB,阻带频率高达10. 5 GHz,抑制水平 超过15 dB。     

基于阶梯阻抗谐振器的双频微带带通滤波器设计

设计了一种基于1/4波长阶梯阻抗谐振器(SIR)的交叉耦合微带双频带通滤波器,利用SIR终端加载的金属化短路通孔实现K倒置器,利用谐振器之间的级间耦合实现J倒置器,通过相邻谐振器之间的级联耦合和不相邻谐振器之间的交叉耦合,完成了四阶双频带通滤波器的设计。滤波器两个通带的中心频率分别为3.78GHz和8.69GHz,中心频率比大于2,对应的插入损耗分别为-1.28dB和-2.29dB,带内回波损耗分别为-12.38dB和-25.0dB。测量结果和仿真结果基本吻合,实现了双频带通滤波器的小型化和低损耗。     

基于枝节加载环形谐振器的双频带滤波器

该文提出了一种新型的非对称枝节加载环形谐振器,并研究了该谐振器的性质。基于提出的谐振器设计了一款双频带通滤波器,并进行了测试。测试结果表明:滤波器的两个通带的中心频率分别为2.38 GHz和5.19 GHz,带宽分别约为140 MHz和90 MHz,带内插损分别小于1.7 dB和2.2 dB,回波损耗分别大于15 dB和12 dB。4个传输零点按频率由低到高分别为1.78 GHz,3.34 GHz,4.98 GHz和5.96 GHz,这些零点极大地提高了滤波器的选择性。     

一种通带可控的双频SIW滤波器设计

提出了一种通过加载T形槽实现双频可控的基片集成波导带通滤波器。滤波器的双频特性由SIW腔内对称的T形槽线谐振器微扰TE101和TE102模得到。通过改变槽线谐振器的物理尺寸可以实现对滤波器两个通带中心频率的灵活控制。为了验证上述方法的可行性,设计了一个中心频率为3.77 GHz和9.27 GHz的双频滤波器。实测得该双频滤波器两个通带的回波损耗优于11 dB,在3.77 GHz时插入损耗为0.8 dB,第一通带的相对带宽可达13%。仿真和测试结果吻合较好,证实了设计方法的有效性。     

基于折叠型SIR 谐振器的双通带滤波器设计

文中提出了一种基于折叠型SIR 谐振器的双通带频率可控的微带滤波器,它由SIR 谐振器特性结合 传输线理论实现。该滤波器设计为具有两个自由度,调节谐振器的导带宽度可以对两个通带之间的频率及其间隔 进行调节。文中还研究了调整谐振器导带长度对滤波器频率特性的影响。测试结果表明,该微带滤波器有两个通 带,其中心频率分别为2. 79 GHz 和3. 90 GHz,带内最小插入损耗分别为-0. 96 dB 和-3. 0 dB,带内最小回波损耗分 别为-42 dB 和-18 dB,相对带宽分别为5. 7%和6. 7%。仿真和测试结果的一致性证实了滤波器设计的有效性。     

横向双模双频滤波器设计

基于横向滤波器耦合结构,采用支节加载双模谐振器,设计了中心频率位于1.57 GHz(GPS应用)与2.4GHz(WLAN应用)的双频微带滤波器。由短路支节加载双模谐振器形成第一个通带,开路支节加载双模谐振器形成第二个通带,两个谐振器被输入/输出馈线隔离,每个通带的中心频率与带宽可以单独调节。测试结果表明:两个通带内的最小插损分别为2.18,1.35 dB,3 dB带宽分别为5.2%,6.8%,回波损耗均小于16 dB,三个传输零点分别位于1.28,2.08,2.71 GHz处。该滤波器具有尺寸小、带外选择性好等优点。     

低损耗双模微带贴片带通滤波器研究

首先提出了一种新颖、简单的带有两个切角的双模微带带通滤波器结构。该结构使用单个贴片谐振器并且没有耦合缝隙,通带两端各有一个衰减极点,可以有效减小滤波器的辐射损耗。对该滤波器结构进一步改进,又提出了一种中心频率1.8GHz相互正交槽线的新型双模微带带通滤波器结构。该滤波器在中心频率1.8GHz处,回波损耗达到31.65dB,通带内最小插损为0.01dB,3dB带宽为19.44%。研究结果表明该结构可以进一步减小辐射损耗,并且可以减小滤波器的体积,有利于小型化。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.