基于多孔氧化铝模板的一维ZnO纳米线的制备

多孔氧化铝由于具有纳米级的孔径、尺寸可调等独特的优点,成为合成纳米材料的一种常用模板.以多孔氧化铝为模板,制备出了纳米量级的纤维、纳米棒、金属管、半导体等新型材料.制备出了优良的多孔氧化铝有序孔洞阵列;以其为模板,采用直流电化学沉积的方法,在其规则排列的孔中沉积得到锌的纳米线;然后将其在高温下氧化,得到氧化锌的纳米线.利用X射线衍射谱、扫描电子显微镜等手段研究了它们的微结构性质,X射线衍射谱表明,用电化学沉积方法得到的锌和氧化锌纳米线均为多晶结构.     

掺锂氧化锌纳米线的光致发光特性

氧化锌（ZnO）是直接宽带隙半导体材料,有高达60meV的激子束缚能,是下一代短波长光电材料的潜在材料。首先制备了优良的多孔氧化铝（Anodic Aluminum Oxide）有序孔洞阵列;以其为模板,采用直流电化学沉积的方法,在其规则排列的孔中沉积得到锌的纳米线;然后将其在高温下氧化,得到氧化锌的纳米线。XRD图显示Li掺杂前后的ZnO纳米线具有较好的晶态结构。对Li掺杂前后的ZnO纳米线进行光学特性测量,结果表明,ZnO纳米线有两个发光峰,分别位于382nm和508nm处;Li掺杂较大地改善了ZnO纳米线的发光性能,本征发光峰移到395nm处,蓝绿发光强度也有了很大程度的提高。     

基于多孔氧化铝模板的ZnO纳米线的制备

首先制备了优良的多孔氧化铝有序孔洞阵列,以其为模板,采用直流电化学沉积的方法,在其规则排列的孔中沉积得到锌纳米线;然后将其在高温下氧化,得到氧化锌纳米线.利用X射线衍射谱、扫描电子显微镜等手段研究了它们的微结构性质.X射线衍射谱表明,用电化学沉积方法得到的锌和氧化锌纳米线均为多晶结构.     

直流电沉积法制备铁纳米线阵列及表征

为了制备结构规整的Fe纳米线阵列,以多孔阳极氧化铝(AAO)为模板,采用直流电沉积法制备了Fe纳米线阵列,并利用SEM、TEM、XRD等测试手段对其微观形貌和结构进行了表征。结果表明:所得的Fe纳米线阵列结构规整、直径与模板孔径基本一致,约为250nm,是结构紧密的多晶体。     

用AAO为模板组装磁性金属Ni纳米线阵列

以多孔阳极氧化铝(AAO)为模板,采用直流电沉积的方法,制备了磁性金属Ni纳米线阵列。选用SEM、TEM、XRD等测试手段,对其微观形貌和结构进行了表征。结果表明:制得的Ni纳米线阵列排列规整、长度一致、直径与模板孔径基本一致,约为250nm,而且是结构紧密的多晶体。研究了电沉积时间对Ni纳米线长度的影响,发现电沉积时间应不超过15h。     

ZnO纳米线的低温生长及其发光特性

采用电场辅助电化学沉积的方法在阳极氧化铝模板中沉积出ZnO纳米线阵列.透射电子显微镜和X射线衍射测试结果表明,制备的纳米线是单晶ZnO纳米线,形貌均匀,直径大约为60nm,并且择优于(101)晶面.对生长过程中所加的辅助电场的作用给出了初步解释.光致发光谱表明,在350～650nm范围内存在一个很宽的发光峰.     

ZnO纳米线的低温生长及其发光特性

采用电场辅助电化学沉积的方法在阳极氧化铝模板中沉积出ZnO纳米线阵列.透射电子显微镜和X射线衍射测试结果表明,制备的纳米线是单晶ZnO纳米线,形貌均匀,直径大约为60nm,并且择优于(101)晶面.对生长过程中所加的辅助电场的作用给出了初步解释.光致发光谱表明,在350～650nm范围内存在一个很宽的发光峰.     

Cu2O纳米线有序阵列的电化学模板法制备

采用电化学沉积法,在氧化铝模板的有序孔洞中制备了立方相Cu2O纳米线有序阵列.用场发射扫描电镜、X射线衍射、透射电镜对样品进行了表征.结果表明,Cu2O纳米线结构致密、直径均匀,约60 nm,沿[100]方向择优生长.     

线径调制Ni纳米线的制备及其磁性

实验基于非对称二次阳极氧化方法,通过在多种不同的电解液中交替阳极氧化制备了孔径大小调制的多孔氧化铝,并以此为模板,电化学沉积了线径调制的Ni纳米线。采用场发射扫描电镜对Ni纳米线进行了形貌表征,照片显示纳米线粗、细段的直径分别约为65和35 nm。X射线衍射分析结果表明Ni纳米线沿着<220>方向择优生长。采用综合物性测量系统测量了不同温度下纳米线阵列的磁滞回线。结果表明调制Ni纳米线的矫顽力随温度变化很小,其矫顽力主要取决于纳米线的形状各向异性。最后对Ni纳米线的反磁化过程进行了分析讨论。     

多孔氧化铝模板的制备及性质研究

多孔氧化铝由于具有规则的纳米多孔结构,是制备各种纳米材料的良好模板,因此,研究多孔氧化铝的制备和物理性质具有重要的意义.采用阳极氧化方法制备了多孔氧化铝有序孔洞阵列,通过场发射扫描电镜(SEM)和X射线衍射(XRD)观测了样品的表面、截面的形貌和晶态结构,分析了样品的透射光谱性质.结果表明,制备的多孔氧化铝模板的孔洞分布有序,孔径大小均匀,严格垂直底面;模板具有非晶态结构,在可见光和红外波长范围内具有较高的透射性能.     

Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass

A method for the fabrication of thick films of porous anodic alumina on rigid substrates is described. The anodic alumina film was generated by the anodization of an aluminum film evaporated on the substrate. The morphology of the barrier layer between the porous film and the substrate was different from that of anodic films grown on aluminum substrates. The removal of the barrier layer and the electrochemical growth of nanowires within the ordered pores were accomplished without the need to remove the anodic film from the substrate. We fabricated porous anodic alumina samples over large areas (up to 70 cm²), and deposited in them nanowire arrays of various materials. Long nanowires were obtained with lengths of at least 9 μm and aspect ratios as high as 300. Due to their mechanical robustness and the built‐in contact between the conducting substrate and the nanowires, the structures were useful for electrical transport measurements on the arrays. The method was also demonstrated on patterned and non‐planar substrates, further expanding the range of applications of these porous alumina and nanowire assemblies.     

Cu/PAA纳米复合结构的制备与偏振特性研究

通过改变二次氧化过程中的氧化电压,制备了不同孔径的多孔Al(PAA)模板;采用交流电沉积的方法,制备了含Cu阳极PAA膜.X射线衍射(XRD)分析表明,阳极PAA膜上确有Cu生成;扫描电镜(SEM)显示,Cu纳米线粗细均匀,具有很好的线栅结构.Cu/PAA复合膜的透射光谱及偏振光谱表明:这种含Cu纳米线PAA膜在近红外光区有较好的透射率和消光比,且随着膜板孔径(Cu纳米线直径)的增加,样品的透射率下降而其消光比却明显提高.因此,可以通过优化模板参数,制备出实用的Cu/PAA偏振器.     

一维氧化锌纳米线生长技术及潜在应用

详细综述了一维ZnO纳米线的制备方法,包括气–液–固催化反应生长法、模板限制辅助生长法、金属有机气相外延生长法、自组织生长法等,介绍了其在微电子及光电子领域的潜在应用。并报道了作者采用热氧化射频磁控共溅射Zn/SiO2复合膜,金属锌从SiO2基质中析出合成了六方纤锌矿结构ZnO纳米线。     

阳极氧化法制备氧化铝纳米线

将Al片在较高的电压下进行阳极氧化,制备了氧化铝纳米线。其形成机制主要是多孔氧化铝膜生长的同时,其微结构单元阵列在薄膜应力作用下沿薄壁处破裂,从而生成了氧化铝纳米线。扫描电镜和透射电镜观测表明,所得产物结构外形基本一致,呈凹柱面正三棱柱形,表观直径约30～300nm,长度为几微米至数十微米。采用BET法对产物的比表面积进行测量,实验值为5.8×104m2/kg,接近于理论计算值6.2×104m2/kg。实验表明,这种氧化铝一维纳米结构材料对超小Ag和CdS纳米颗粒具有较强的吸附能力,对很难用传统的过滤和离心沉淀法去除的超小纳米颗粒(直径小于10nm)也能做到有效吸附,有望成为超级吸附与过滤材料。     

Synthesis,Chemical Modification,and Surface Assembly of Carbon Nanowires

Carbon nanotubules and nanowires were synthesized by pyrolysis of polymer precursors in the pores of alumina membranes. The nanowires were released by dissolving the membranes, and were then made hydrophobic or hydrophilic by chemical surface derivatization. These nanowires could be placed into lithographically defined wells on surfaces by means of electrostatic interactions with monolayers at the bottoms of the wells.     

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces,and Corresponding Improvement of Electrodeposited ZnO‐Cu2O Photovoltaics

A novel buffering method is presented to improve the stability of zinc oxide processed in aqueous solutions. By buffering the aqueous solution with a suitable quantity of sacrificial zinc species, the dissolution of functional zinc oxide structures and the formation of unwanted impurities can be prevented. The method is demonstrated for ZnO films and nanowires processed in aqueous solutions used for the selective etching of mesoporous anodic alumina templates and the electrochemical deposition of Cu₂O. In both cases, improved ZnO stability is observed with the buffering method. ZnO‐Cu₂O heterojunction solar cells (bilayer and nanowire cells) synthesized using both traditional and buffered deposition methods are characterized by impedance spectroscopy and solar simulation measurements. Buffering the Cu₂O deposition solution is found to reduce unwanted recombination at the heterojunction and improve the photovoltaic performance.     

Co‐synthesis of ZnO–CuO Nanostructures by Directly Heating Brass in Air

ZnO–CuO nanostructures have been simultaneously synthesized by directly heating a CuZn alloy (brass) on a hotplate in ambient conditions. Depending on the Zn concentrations in the brasses, the dominant products transition from CuO nanowires to ZnO nanostructures. By changing the growth temperature and local Zn contents, 1D ZnO nanowires/nanoflakes, 2D ZnO nanosheets, and complicated 3D ZnO networks are obtained. Electron microscopy studies show that the as‐synthesized ZnO nanoflakes and nanosheets are single crystalline. Based on “self‐catalytic” growth, a tip‐growth mechanism for ZnO nanostructures is discussed, in which the Cu in brass plays an important role to confine the lateral growth of ZnO. Finally, the electron field emission from the ZnO–CuO hybrid systems is tested for the demonstration of potential applications.     

一维磁纳米线阵列的制备及其应用

综述了以多孔阳极氧化铝为模板制备一维磁纳米线的方法,包括溶胶-凝胶法、化学沉积法和电化学沉积法等。阐述了一维磁纳米线在磁记录、巨磁电阻、量子磁盘及高密度存储等领域的应用前景。     

Catalyst-free growth of ZnO nanowires on various-oriented sapphire substrates by pulsed-laser deposition

Catalyst-free growth of one-dimensional zinc oxide (ZnO) nanowires is reported. ZnO nanowires were synthesized on ZnO buffer layers deposited on various-oriented sapphire substrates. Syntheses of ZnO buffer layers and nanowires were performed by ultraviolet pulsed-laser deposition. ZnO nanowire's number density was the lowest in the case of using m-cut sapphire substrates. ZnO nanowires grown on a-cut sapphire substrates had vertical alignment with distances of tens to hundreds of nanometers. On the other hand, ZnO nanowires grown on c-cut sapphire substrates had the biggest nucleation rate. The dependence of crystalline orientation of ZnO buffer layers on the orientation of sapphire substrates were investigated by electron back scatter diffraction measurement. From their results, the growth models of ZnO buffer layers were suggested and the variations in morphological properties of ZnO nanowires were discussed.