光纤光栅复用调揩滤波检测系统的研究

提出了空分复用和同步滤波处理技术相结合的光纤光栅传感器波长检测方案。实验系统对光纤光栅滤波器进行空分复用 ,实现了对传感信号光的波长域分段同步滤波处理 ,检测范围为 2 1nm ,波长分辨率优于 7pm ,测试精确度可达± 0 .0 15nm ,达到了实用化要求。     

基于光纤光栅级联调谐技术的波长检测系统

报道了一种检测光纤光栅传感器波长的新方案。实验系统采用新型的级联结构对电热调谐的光纤光栅滤波器进行复用,扫描分析传感信号光的峰值波长,同时用参考波长校准方法消除了电热调谐中的蠕动误差。结果表明,系统的检测范围可达23nm,波长分辨率为3.1pm,应变测量分辨率为2.56με。     

基于实时校准技术的光纤光栅传感解调系统

报道了一种采用实时校准技术的数字化光纤光栅传感解调方案。解调系统利用锯齿波电压信号和数字相位同步信号控制可调谐光纤法布里一珀罗(TFFP)滤波器，对光纤光栅传感器阵列进行扫描式寻址，同时采用非测量环境中的参考光栅和数字温度计提供精确的参考波长，并由高速数字信号处理器(DSP)实时校准滤波器的波长读取值，很好地消除了滤波器渊谐的温度漂移、非线性和蠕动性引起的测量误差。结果表明，实验系统的波长寻址范围为1520～1570nm，扫描频率为100Hz，波长测量分辨率为5pm，应变测量分辨率为4．13με。     

基于LabVIEW光纤光栅波长移位检测系统

LabVIEW是一个高效的图形化程序设计环境，它在测量、测试及工业控制领域已有广泛的应用。介绍了一种基于LabVIEW的光纤光栅波长移位检测系统，依靠虚拟仪器工作平（LabVIEW），实现了PC机与可调谐激光器之间的通信及数据采集、分析和显示；从而快速、智能化地实现了光纤光栅波长移位检测。实验表明该系统的波长检测灵敏度为0．00965nm/℃，波长分辨率为2pm，波长检测范围不受系统限制，一般可达30nm以上。     

基于长周期光纤光栅的可调谐光滤波器设计

分析了长周期光纤光栅(LPFGs)透射谱受外界环境折射率变化影响的特性及其原理,进而提出了一种新型的可调谐光滤波器的设计思路．并运用分段光栅的矩阵分析法对其进行了具体的计算。此种光滤波器具有滤波精度高、可实现滤波波长和深度单独、连续调谐及全光纤性等优点,滤波波长调谐范围可达15nm,衰耗深度调谐范围达9dB。     

光纤光栅静态和动态波长同时解调技术的研究

阐述了基于可调谐滤波器(TOF)对光纤光栅(FBG)静态波长和动态波长同时解调技术的研究。将FBG粘贴于悬臂梁上,在其自由端通过砝码和激振器同时给FBG施加静应变和动应变,检测FBG静态波长和动态波长的变化。初步实验表明：准静态波长检测分辨率为1．6pm,动态波长检测分辨率为0．007pm／√Hz。     

基于可调谐激光器的复用传感系统的研究

为了克服复用传感系统中光源带宽及功率的制约,有效地扩大多点检测的范围,采用波分和时分复用传感技术,设计了可调谐光纤激光器作为传感系统的光源.基于耦合模方程的理论,对匹配光栅调谐光纤激光器波长扫描寻址解调方法进行了理论分析和实验研究.实验中采用可调谐光纤激光器对由4个光栅组成的两个光栅串成功地进行了波分和时分复用传感,实验获得的应变分辨率为2.9με/step.该传感系统具有经济实用性、信噪比高、可复用数目大等特点,对于多点检测的传感网络具有较大的实用价值.     

光纤布喇格光栅传感器的波长移位检测方法

光纤光栅波长移位检测技术是光纤光栅传感器的关键技术之一.详细介绍了宽带光源/宽带滤波或边缘滤波器接收、宽带光源/可调窄带接收、宽带光源/干涉接收和可调谐窄带光源/宽带接收四类波长检测方案,分析了几种波长移位检测方法的基本工作原理,并对其特点进行了讨论.     

光纤光栅调谐特性的实验研究和分析

对光纤光栅的调谐特性进行了简单的理论分析和具体的实验研究，利用徽位移器(精度0．1μm)对光纤光栅进行纵向拉伸实验，实验中采用了先进的高分辨率光谱仪(分辨率为0．004nm)进行测试，实现了高精度的机械调谐和测试。实验结果比较理想，验证了理论分析的结果，两根光纤光栅分别实现调谐范围6．320nm和5．762nm，光纤光栅每拉伸约0．117％，Bragg波长位移1nm。同时发现，调谐前后的中心Bragg波长、反射率、透射谱几乎不变。     

应力测量的光纤光栅调谐技术的研究

光纤光栅波长调谐在光纤传感领域中具有重要意义和实用价值。从理论上分析了基于悬臂梁的光纤光栅波长调谐的基本原理,阐述了等强度悬臂梁调谐技术及其特点。基于光谱分析仪0.1nm的光谱分辨率的测量,实验结果与理论分析一致。实验装置构形简单、成本低,有较好的线性,易于定标和操作。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.