机抖激光陀螺惯导结构固有模态的有限元分析

通过对机抖激光陀螺惯导结构的物理模型进行分析，建立了机抖激光陀螺惯导结构的有限元模型，在此基础上对惯组结构的若干低阶模态进行了分析。对模态分析结果和实验测量结果进行了对比，计算结果表明：模态分析所得结果与实验测量结果一致，计算误差小于 5.23%， 验证了有限元分析方法的正确性和可行性，指出了惯导结构设计中的薄弱环节。研究工作为机抖激光陀螺惯导结构的动力学修改和优化设计提供了参考依据。     

基于激光陀螺平台的船载姿态定位系统

为确保船载卫星接收机能够得到自身实时、准确的姿态信息,考虑到低成本的要求,采用微机电系统(MEMS)惯性器件设计接收机用姿态定位系统。利用船头部的高精度激光陀螺导航系统来组合尾部的MEMS惯导系统,对MEMS捷联惯导系统的误差进行了分析并建立组合导航系统的动态模型,利用Sage-Husa自适应滤波器对惯导系统的误差进行估计,对MEMS惯导系统的姿态解算结果予以修正,以解决MEMS惯导姿态精度低的问题,试验验证方案可行。     

加速度计/磁强计无陀螺捷联惯导姿态解算研究

针对无陀螺捷联惯导系统姿态解算随时间不断积累的问题,提出一种磁强计辅助无陀螺捷联惯导的组合方案,利用磁强计测量的地磁信息来修正无陀螺惯导系统的姿态角误差,提高了姿态角的解算精度。推导了磁强计输出和姿态角之间的关系,在此基础上提出了一种姿态优化算法,介绍了算法的基本原理;建立了误差四元数的姿态组合模型,并采用反馈校正完成动态条件下姿态的确定;最后对姿态误差角进行了仿真研究,仿真结果表明该方法有效地抑制了误差的发散。     

激光陀螺性能测试评估系统设计与开发

激光陀螺性能指标是进行陀螺误差建模和激光捷联惯导系统补偿设计的前提和基础。设计了激光陀螺性能测试评估系统硬件平台,开发了基于LabWindows/CVI的测试软件,并对实验室现有激光陀螺进行了全面测试、评估。结果表明:系统设计合理、技术先进、功能完备、测试准确,能完全满足各类激光陀螺的性能测试及性能评估。     

激光陀螺捷联惯性导航系统IMU误差标定

针对激光陀螺捷联惯性导航系统惯性测量单元(IMU)误差标定对转台精度、基座对北和调平要求较高,以及系统工作时激光陀螺抖动、长时间工作温度升高、算法复杂等因素,提出了以速度为观测量,采用以最小二乘拟合法的系统级标定法。通过三轴转台多位置测量：静止 转动 静止,快速辨识三轴激光陀螺和三轴加速度计正交安装误差、传感器零偏、刻度因子等24个误差参数,整个标定过程时间约2 h,多位置对准航向、横滚、俯仰测试精度优于0.012°。实验表明,采用该方法算法简单,操作过程便捷,可以有效提高激光陀螺捷联惯性导航系统IMU精度。     

激光陀螺小波滤波方法研究

为了减小激光陀螺随机误差对激光捷联惯导系统对准、导航精度的影响,采用小波分析方法对其输出信号进行滤波处理.开发了评估软件,并对其在实际系统中滤波前后效果进行了深入研究.结果表明,评估软件准确可靠,小波分析方法简单实用,特别适合激光陀螺信号的处理,在很大程度上提高了系统对准、导航精度.     

激光捷联惯导系统的射前快速标定技术

捷联惯导系统射前自标定是提高系统精度的重要途径。基于激光陀螺标度因数稳定的特点,建立了适合激光陀螺捷联惯导系统射前自标定的加速度计误差参数模型。分析了基座扰动使姿态发生微幅变化对加速度各通道输出影响,设计了适合激光陀螺捷联惯导系统的加速度计自标定算法,该算法具有一定的抗扰动能力。在误差参数可观测性分析的基础上,设计了射前自标定方案,并进行了实验验证,试验结果表明,该方案可快速准确标定出加速度计相关误差参数。     

机抖激光陀螺抖频匹配技术的优化

在机抖激光陀螺(DRLG)捷联惯导系统(SINS)中,陀螺的抖动偏频会引起伪圆锥运动。分析了伪圆锥运动对捷联惯导系统旋转矢量计算的影响,并推导了其表达式。通过数值计算,分析了影响伪圆锥误差的因素,提出了机抖激光陀螺抖动频差的匹配原则,以实现伪圆锥误差最小化。基于该匹配原则,面向工程实际问题提出了一种机抖激光陀螺抖频调谐技术。仿真分析和实验结果表明,选用一种主体抖动轮并按需选配调节构件,该技术可满足系统对陀螺抖动频差的匹配要求,同时不会对陀螺整体外形尺寸和抗振性能造成任何影响。与传统方案相比,进一步提升了机抖激光陀螺,尤其是小型化机抖激光陀螺的工程化水平,降低了生产成本。     

长航时激光惯导定位误差的补偿方法研究

针对激光惯导长时间航行时定位误差发散的问题,提出了一种适用于激光惯导定位误差综合补偿的方法。引入经典的误差方程和旋转激光陀螺的误差方程,主要分析陀螺漂移对惯导系统的影响,根据分析结论,提出了基于外部位置和航向信息的长航时激光惯导定位误差的补偿方法。理论和实验分析表明,所提出的补偿方法明显的抑制了激光惯导的误差随时间的积累,可有效提高长航时激光惯导的定位精度。     

激光陀螺捷联惯导尺寸效应误差分析与补偿

在高动态条件下,加速度计尺寸效应已成为影响激光陀螺捷联惯导系统精度的重要误差源.文中从理论上分析了尺寸效应的产生机理,认为尺寸效应的产生是由于加速度计测量点不一致而引起,分析了激光陀螺机械抖动引起的尺寸效应误差.对加速度计组件在一般安装关系下的尺寸效应误差模型进行了推导.对于加速度计非正交安装情形,在常规静态标定模型基础上,推导了考虑尺寸效应后的动态标定模型.以导航速度为观测量,建立了加计组件尺寸效应误差补偿的一般模型方程.一系列的试验证明,尺寸效应补偿有效地提高了导航精度.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.