纳米4-H碳化硅薄膜的掺杂现象

对纳米晶SiC薄膜进行了P和B的掺杂,B掺杂效率比P高,其暗电导预前因子与激活能遵守Meyer-Neldel规则,并有反转Meyer-Neldel规则出现.掺杂效率比非晶态碳化硅薄膜高是纳米碳化硅薄膜的特点之一.非晶态中的隧穿和边界透射对输运有一定贡献.     

P-nc-si:H薄膜材料及在微晶硅薄膜太阳电池上应用

对RF PECVD技术沉积p nc Si:H薄膜材料进行了研究。随着功率的增大材料的晶化率增大。B的掺杂可以提高材料的电导率,同时会抑制材料的晶化,在纳米Si薄膜材料中B的掺杂效率很高,少量的B即可获得高的电导率,而对材料晶化影响不大。用比较高沉积功率和少量B的方法获得了高电导率、宽光学带隙和高晶化率的P型纳米Si薄膜材料(σ=0.7S/cm,Eopt>2.0eV)。将这种材料应用于微晶硅(μc Si)薄膜太阳能电池中,电池结构为:glass/SnO2/ZnO/p nc Si:H/I μC Si:H/n Si:H。首次获得效率η=4.2%的μC Si薄膜太阳能电池(Voc=0.399V,Jsc=20.56mA/cm2,FF=51.6%)。     

用ECRCVD法制备的纳米碳化硅薄膜及其室温下的强光发射

用电子回旋共振化学气相沉积(ECRCVD)方法制备了纳米碳化硅薄膜.实验中发现:在高氢稀释反应气体和高微波功率条件下,可以得到结构上具有纳米碳化硅晶粒镶嵌在碳化硅无序网络中的薄膜.用高分辩透射电子显微镜、傅里叶红外吸收谱、Raman散射和X射线光电子谱等分析手段对薄膜的结构进行了分析.在室温条件下,薄膜能够发出强烈的短波长可见光,发光峰位于能量为2.64eV处.瞬态光谱研究表明样品的光致发光寿命为纳秒数量级,表现出直接跃迁复合的特征.这种材料有希望在大面积平面显示器件中得到应用.     

用ECRCVD法制备的纳米碳化硅薄膜及其室温下的强光发射

用电子回旋共振化学气相沉积(ECRCVD)方法制备了纳米碳化硅薄膜.实验中发现:在高氢稀释反应气体和高微波功率条件下,可以得到结构上具有纳米碳化硅晶粒镶嵌在碳化硅无序网络中的薄膜.用高分辩透射电子显微镜、傅里叶红外吸收谱、Raman散射和X射线光电子谱等分析手段对薄膜的结构进行了分析.在室温条件下,薄膜能够发出强烈的短波长可见光,发光峰位于能量为2.64eV处.瞬态光谱研究表明样品的光致发光寿命为纳秒数量级,表现出直接跃迁复合的特征.这种材料有希望在大面积平面显示器件中得到应用.     

负载Au或Pt的TiO2纳米管薄膜的光电性能研究

为了比较两种贵金属(Au和Pt)在改善TiO₂纳米 管(TNT)阵列薄膜光电性能时的不同 贡献,实验采用后期掺杂法和前期掺杂法分别制备了Au或Pt纳米粒子修饰的TNT阵列薄膜, 分别命名为TNT-Au和TNT-Pt、Au/TNT和Pt/TNT。通过测试样品的P-V特性曲线和光催化降解 行为,发现无论采用哪种方法,贵金属掺杂的TNT阵列薄膜的光电性能都得到了改善。相对 于纯TNT阵列薄膜,TNT-Pt薄膜的光电转换效率最高,约是35倍;TN T-Au薄膜的光催化活性 最高,约是2倍。而且还发现,对于光电转换效率,TNT-Pt薄膜约是TNT-Au薄膜的10倍,Pt /TNT薄膜约是Au/TNT薄膜的2.9倍;对于光催化降解率,TNT-Au薄膜 约是TNT-Pt薄膜的1.5倍 ,Au/TNT薄膜约是Pt/TNT薄膜的1.2倍。因此可以总结,Pt纳米粒子 比Au纳米粒子更有利于 提高TNT阵列薄膜的光电转换效率,而Au纳米粒子比Pt纳米粒子更有利于改善TNT阵列薄膜的 光催化活性。     

稀土元素掺杂对CoFe基非晶薄膜微波磁谱的影响

采用磁控溅射工艺制备了CoFeNbZrRE非晶态薄膜,重点研究了掺杂稀土元素(RE)的种类和掺杂量对薄膜微结构、软磁性能、微波磁导率及其频谱特性的影响。结果表明,少量稀土元素的掺杂对该类薄膜的微结构和软磁性能影响较小,但可增强薄膜磁谱的弛豫性,从而影响其微波磁导率。增加稀土元素的掺杂量能显著提高薄膜的弛豫性和微波磁损耗,且重稀土元素比轻稀土元素表现出更强的弛豫性。适当选取稀土元素的种类和含量,CoFeNbZrRE类非晶态薄膜在吉赫兹微波段复磁导率实部和虚部均可高于100,有望在超薄层吸波材料中获得应用。     

脉冲激光退火纳米碳化硅薄膜的拉曼散射研究

采用XeCl准分子激光实现了碳化硅薄膜的脉冲激光晶化,对退火前后薄膜样品拉曼散射谱特征进行了分析,探讨了激光能量密度对纳米碳化硅薄膜结构和物相特性的影响.结果显示晶态纳米碳化硅薄膜的拉曼散射峰相对体材料的特征峰显著宽化和红移,并显示了伴随退火过程存在着硅和碳的物相分凝现象.随着激光能量密度的增大,薄膜的晶化度提高,晶化颗粒增大,而伴随的分凝程度逐渐减小.     

RF溅射碳化硅薄膜的结构研究

本文作者用RF溅射法获得碳化硅薄膜,利用AES、XPS、TEM和UPS等现代分析仪器研究了碳化硅薄膜的结构.溅射薄膜中Si∶C=1∶1.主要化学键形式为Si-C共价键,原子排布状态为非晶态,并且在短程结构中存在大量畸变与缺陷,薄膜为不理想非晶结构,带尾较长.     

p型微晶硅薄膜的沉积及其在微晶硅薄膜太阳电池中的应用

采用等离子体化学气相沉积(PECVD)方法制备了硼掺杂微晶硅薄膜和微晶硅薄膜太阳电池.研究了乙硼烷含量、p型膜厚度及沉积温度对硼掺杂薄膜生长特性和高沉积速率的电池性能的影响.通过对p型微晶硅薄膜沉积参数的优化,在本征层沉积速率为0.78nm/s的高沉积速率下,制备了效率为5.5%的单结微晶硅薄膜太阳电池.另外,对P型微晶硅薄膜的载流子疏输运机理进行了讨论.     

P(VDF-TrFE)/Ag复合薄膜的铁电以及介电性能研究

利用旋涂法制备并采用氢气退火处理得到P(VDF-TrFE)/Ag复合薄膜,在XRD图像上可以观察到在2θ=38.1°的Ag(111)相的衍射峰,同样在SEM图像上观察到银纳米粒子的存在.在薄膜的红外透射光谱上可以观察到β相特征峰的蓝移,这可归结为银纳米粒子与偶极子的相互作用.银纳米粒子的掺杂增强了薄膜的铁电和介电性能.与传统退火方式处理的纯P(VDF-TrFE)薄膜相比,纳米银掺杂比例为10％的P(VDF-TrFE)/Ag复合薄膜的铁电剩余极化强度和介电常数分别提高了32.5％和13.3％.介电损耗不随纳米银掺杂比例的增加而变化的现象不符合渗流理论.     

Observation of Meyer–Neldel rule in CdS thin films

A study of electrical transport in CdS thin films is reported. We have observed, for the first time, that CdS thin film conductivity obeys the Meyer–Neldel rule (MNR). This was deduced from linking the conductivity pre-exponential factor to the activation energy variation. CdS films were deposited by chemical bath deposition at different solution temperatures in order to vary the electrical activation energy of the films. A correlation between the MNR rule and the disorder in the film network is highlighted. The multi-trapping process in the band tail-localized states governs the conductivity in CdS films. This explains the MNR observation in CdS films. The variation of the electrical conductivity pre-exponential factor and activation energy are correlated to the disorder in the film network; this was explained in terms of polaron formation and phonon–electron coupling with disorder.     

热丝化学气相沉积法低温制备纳米晶态碳化硅薄膜

采用热丝化学气相沉积(HFCVD)技术以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上合成了纳米晶态SiC薄膜。通过X射线衍射(XRD)、扫描电镜(SEM)、高分辨透射电镜(HRTEM)以及光致发光(PL)检测技术对薄膜的晶体结构、表面形貌和PL特性进行了分析和表征。结果表明，在较低的衬底温度下所沉积的薄膜是由镶嵌于非晶SiC网络中的晶态纳米SiC构成。纳米晶粒平均尺寸约为6nm。室温下用HeCr激光激发样品，观到薄膜发出波长位于400～550nm范围内可见光辐射。     

纳米多晶SiC膜中由强散射形成的谐振腔激射的研究

纳米碳化硅多晶膜构成的无序结构的拉曼受激散射和似激光散射是这种材料的一个新现象。本文讨论了在碳化硅纳米薄膜中出现的拉曼受激散射和随机激光现象，提出拉曼受激散射阈值降低的原因在于纳米晶体的散射截面增大，而随机激光是由于纳米晶体构成的无序结构因光在其中产生局域化所致。此外，本文还报道了荧光辟裂的现象，初步认为是纳米无序结构形成的光子禁带产生的作用。     

An accurate method to determine the through-plane electrical conductivity and to study transport properties in film samples

The through-plane conductivity of a film sample is critically important because it largely affects the performance of batteries, capacitors, and thermoelectric devices. In this study, we developed a modified four-probe through-plane electrical conductivity measurement method using a coaxial structure. This method is general and works for free-standing film samples. We studied different samples including a steel sheet, highly oriented pyrolytic graphite, and conducting polymers. We confirmed metallic transportation in the steel sheet and hopping transportation in graphite in the through-plane direction by conducting low temperature measurements at 100 K. In the case of a conducting polymer poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate, the conductivity anisotropic ratio decreases with increasing in-plane conductivity. Temperature dependent measurements show two distinct activation energy regimes in the through-plane direction in PEDOT/PSS but almost no change in the in-plane electrical conductivity activation energy. This could be due to additional carrier paths that occur through the more disordered region (the PSS-rich region) in the through-plane direction. We also examined the Meyer–Neldel rule in PEDOT/PSS and concluded that PEDOT/PSS follows the anti-Meyer–Neldel rule, likely due to the high carrier density in the film.     

Crystallization and Transport Properties of Amorphous Cr-Si Thin Film Thermoelectrics

We studied the thermoelectric properties, crystallization, and stability of amorphous and nanocrystalline states in Cr-Si composite films. Amorphous films, prepared by magnetron sputtering, were transformed into the nanocrystalline state by annealing with in situ thermopower and electrical resistivity measurements. We have found that the amorphous state is stable in these film composites to about 550 K. Prior to crystallization, the amorphous films undergo a structural relaxation, detected by peculiarities in the temperature dependences of the transport properties, but not visible in x-ray or electron diffraction. The magnitude and temperature dependences of electrical conductivity and thermopower indicate that electron transport in the amorphous films is through extended states. The amorphous films are crystallized at annealing temperatures above 550 K into a nanocrystalline composite with an average grain size of 10–20 nm.     

Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures

The effect of laser radiation on the characteristics of amorphous silicon films on glassy or quartz substrates are studied by Raman spectroscopy. It is established that an increase in the laser-treatment power yields a phase transition from amorphous silicon to nanocrystalline silicon. The variation in the relation between the nanocrystalline and amorphous silicon fractions in the films is described in the context of the critical impact model.     

Conductivity of thin nanocrystalline silicon films

It is shown in this paper that thin (200–250 Å) hydrogenated nanocrystalline silicon films have low longitudinal conductivity, comparable to that of undoped amorphous silicon, and high transverse conductivity. These films can be used as doping layers in barrier structures with low surface current leakage. It was found that film conductivity decreases by 8–10 orders of magnitude along the layer as the layer thickness is reduced from 1500 to 200 Å. The observed dependence of the conductivity on thickness can be explained (in terms of percolation theory) by destruction of a percolation cluster made up of nanocrystallites as the layer thickness is decreased.     

Co掺杂SiC薄膜的紫外光敏特性

采用射频磁控溅射技术和复合靶材的方法,在p型单晶Si衬底上制备SiC薄膜及Co掺杂SiC薄膜。在真空度为1.0×10-4Pa、温度为1 200℃条件下,保温1 h进行晶化处理。通过X射线衍射(XRD)、X射线能量色散谱(EDX)、霍尔测量和紫外激光器等对薄膜的晶体结构、Co掺杂浓度、载流子浓度、导电类型及光敏特性等进行测试。结果表明,SiC薄膜为6H型晶体结构,Co掺杂后SiC薄膜的导电类型由n型转变为p型,载流子浓度比未掺杂的高2个数量级,对紫外光灵敏度是未掺杂的2倍,光照响应时间比未掺杂的缩短1/3。     

A comparative study of the passivation films on AlGaAs/GaAsheterojunction diodes and bipolar transistors

A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiO_x and SiN_x, was investigated in terms of the electrical characteristics of GaAs/Al_0.3Ga_0.7As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials     

Photoconductivity of two-phase hydrogenated silicon films

Electrical, photoelectric, and optical properties of hydrogenated amorphous silicon films with various ratios between the nanocrystalline and amorphous phases in the structure of the material have been studied. On passing from an amorphous to a nanocrystalline structure, the room-temperature conductivity of the films increases by more than five orders of magnitude. With increasing fraction of the nanocrystalline component in the film structure, the steady-state photoconductivity varies nonmonotonically and is determined by the variation in the carrier mobility and lifetime. Introduction of a small fraction of nanocrystals into the amorphous matrix leads to a decrease in the absorption in the defect-related part of the spectrum and, accordingly, to a lower concentration of dangling bonds, which are the main recombination centers in amorphous hydrogenated silicon. At the same time, the photoconductivity in these films becomes lower, which may be due to appearance of new centers that are related to nanocrystals and reduce the lifetime of nonequilibrium carriers.