AMC7820的原理及在DWDM中的应用

日前,德州仪器公司(TI)推出业界首款专为多通道应用而设计的模拟监视与控制电路AMC7820。在多通道应用中,高性能和小尺寸至关重要,如光放大器中的泵激光电流和热电致冷器(TEC)控制以及DWDM应用的光功率监控等。在当前WDM(波分复用)传输技术中,具有动态可调增益的宽带增益平坦型     

电子线路学习方法(十七) 第九讲 差分放大器电路分析方法

一、差分放大器分析方法1.了解差分放大器电路结构分析差分放大器要了解这种电路在结构上与一般放大器有较大的不同,归纳起来主要有以下几个方面:(1)使用两只同型号三极管构成一级差分放大器,并且两管的静态工作电流(基极电流、集电极电流和发射极电流)相等.(2)这种放大器共有两个输出端和两个输入端,在实用电路中可以只用其中的一...     

AMC1200：隔离式放大器

德州仪器宣布推出一款隔离式放大器，适合电机控制与绿色能源应用。该AMC1200隔离式放大器与AMC1204△∑型调制器可帮助设计人员提高AC驱动器、太阳能逆变器以及不间断电源等设备的精确性、温度稳定性以及磁场抗扰性。     

晶体管对数放大器

详细地讨论了国产小功率硅管主九个电流量级中的精确对数特性。具体给出了1mv——10v或1×10~(-3)——1×10~(-8)安量程的可进行噪声滤波的对数放大器的电路原理图。     

晶体管六声道前置放大器

面对SACD和DVD-Audi o多声道高质量音源的发展,便有了多声道前置放大器的需求。众所周知,用于高保真音响系统的前置放大器有两个基本特征,一是半导体电路的电源电压相当高,二是输出晶体管可给出的电流足够大。本文介绍的前置放大器的电源电压高达60V,其晶体管可给出的电流为15mA。该前置放大器的输出信号电压为25Vpp,谐波失真小于1%,即在20Hz～20kHz范围内输出信号电压为1Vef f,谐波失真小于0.01%。一、原理图1为前置放大器原理图。六个声道中的每个声道均由一个包含三个晶体管的组件构成。场效应管T1(BF245C)的偏压由偏置电路R1和R…     

电压反馈和电流反馈运算放大器的比较

从闭环特性、开环特性、输入级、噪声等几个方面，对电流反馈(CFB)放大器和电压反馈(VFB)放大器进行了详细的比较，得出了CFB放大器和VFB放大器的一些基本特性和应用场合。通过对这两种电路的比较，有助于电路设计师在实际应用中选择最适合自己要求的运算放大器。     

功率放大器的使用极限

为了实现功率放大器的叮靠性设计,就必须考虑放大器的承受能力。通过功率放大器的安全工作区(SOA)曲线来确定功率的范围限制。放大器的承受能力取决于放大器的负载和信号的状态。 图1所示的一个简化的功率运算放大器,输出晶体管Q_1和Q_2给负载提供正的和负的输出电流。I_(our)表示的是由放大器流出的电流,因此Q_1是供给输出电流。对于正的输出电流,Q_2是关的,从而可     

DESIGN SHOWCASE

精密的运算放大器输入保护二极管可对两个独立的模拟信号输入线起到钳位二极管的作用(图1).当信号幅度在钳位电平以内时,图中所示器件在25℃时漏电电流极低,仅为50fA到100fA.钳位电压V_1和-V_2接在该低压CMOS放大器的电源端上.只要V_1的电位高于-V_2,钳位电压可定在0和最大电源电压绝对值(12V)之间的任意电压上.将第8管脚接到第4管脚上,1、5及6号管脚不接.当V_1与-V_2人之间的电压为10V时,该放大器所需电流低于50μA,属此种线路条件下的典型电流.若第3管脚相对于第2管脚电压为正值的话,则典型的电源电流低于1μA.     

用两个单向电流检测放大器组成一个双向电流检测放大器

许多电池电流监测应用中需要双向电流检测功能,以测量电池的充电和放电电流.本文介绍了怎样用两个单向电流检测放大器(如MAX4172和MAX4173)组成一个双向电流检测放大器.     

新品橱窗

惠普推出光隔离式控制元件HCPL-7820,用于多速AC马达控制及功率转换。新元件有助于减低成本及马达控制器体积。高共态抑制摸拟隔离放大器HCPL-7820为以微控制器为基础的精度控制器,提供准确及隔离电流及电压。此产品能取代如闭环霍尔效应感应器等元件,方便简单。功能特性包括0.15％非线性、1.7-mV输入偏移电     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.