一种高效的门级电路可靠度估算方法

随着半导体技术的不断发展,芯片的集成度越来越高,软差错已经成为影响电路可靠性的关键因素之一.为了有效评估软差错对电路的影响,该文提出一种基于信号取值概率的门级电路可靠度估算方法.首先计算电路所有节点在软差错影响下的取值概率,然后用故障模拟分析电路整体可靠性.通过对基准电路的实验并与概率转移矩阵方法进行比较,该方法在不损失准确度的前提下,在时间与空间开销方面都具有优势,尤其适合估算特定向量和随机向量激励下电路的可靠度.     

触发器可靠度计算的F-PTM方法

传统的概率转移矩阵（PTM）方法是一种用于估计软错误对组合电路可靠度影响的有效方法,但传统PTM方法只适用于组合逻辑电路的可靠度评估.触发器是时序逻辑电路的重要组成部分,其可靠度评估对时序电路的可靠度分析研究至关重要.为此,本文提出了基于PTM的触发器可靠度计算的F-PTM方法及电路PTM的判定定理.F-PTM方法首先建立触发器电路的特征方程,再用电路PTM的判定定理生成触发器的PTM,最后,根据输入信号的概率分布函数计算出电路的可靠度.与传统PTM方法相比较,F-PTM方法既能计算组合电路的PTM,又能计算触发器电路的PTM,其通用性强.对典型的触发器电路和74X系列电路中的触发器电路的实验结果表明,F-PTM方法合理可行.与多阶段方法和Monte Carlo方法的实验结果相比较,F-PTM方法得到的结果更精确.     

基于概率转移矩阵的时序电路可靠度估计方法

传统的概率转移矩阵(Probabilistic Transfer Matrix,PTM)方法是一种能够比较精确地估计软差错对门级电路可靠度影响的方法,但现有的方法只适用于组合逻辑电路的可靠度估计.本文提出基于PTM的时序电路可靠度估计方法(reliability estimation of Sequential circuits based on PTM,S-PTM),先把待评估时序电路划分为输出逻辑模块和次态逻辑模块,然后用本文提出的时序电路PIM计算模型得到电路的PIM,最后根据输入信号的概率分布计算出时序电路的可靠度.用ISCAS 89基准电路为对象进行实验和验证,实验表明所提方法是准确和合理的.     

基于伯努利分布的逻辑电路可靠度计算方法

在深亚微米及纳米级集成电路设计过程中,电路的可靠性评估是非常重要的一个环节.本文提出了一种利用概率统计模型计算逻辑电路可靠度的方法,将电路中的每个逻辑门是否正常输出看作一次随机事件,则发生故障的逻辑门数为某个特定值的概率服从伯努利分布;再利用实验统计单个逻辑门出错时电路的逻辑屏蔽特性,根据此方法计算出ISCAS'85和ISCAS'89基准电路可靠度的一个特定范围.理论分析和实验结果表明所提方法是准确和有效的.     

基于概率转移矩阵的串行电路可靠度计算方法

概率转移矩阵(Probabilistic Transfer Matrix,PTM)方法是一种能够在门级比较精确地估计差错对电路可靠性影响的方法,但目前其实现方法只能适用于较小规模的电路.本文引入了电路划分的思想,先把电路分割成一组适宜用原始PTM方法直接计算其可靠度的模块,然后计算出这些模块的可靠度,再依据串行可靠度模型,将所有模块可靠度合成为整个电路的可靠度.本文用实验的方法通过对74系列电路的分析得到了合适的电路分割参数,即分割宽度,再进一步对ISCAS85基准电路进行了可靠度的计算,结果表明新方法可以适用于更大规模的无冗余组合电路.通过与依据美军标MIL-HDBK-217所算得的可靠度的比较,验证了本文所提出的方法的合理性.     

基于概率表达式的MPRM电路功耗计算方法

采用基于信号概率的功耗计算模型进行MPRM（Mixed Polarity Reed-Muller）电路功耗优化,信号概率计算是功耗计算的关键.提出一种基于概率表达式的MPRM电路功耗计算方法.该方法兼顾信号概率计算的时间效率和准确性,对MPRM电路中不存在空间相关性的信号通过在电路中传播信号概率的方式计算其信号概率,存在空间相关性的信号则利用概率表达式计算其信号概率,并在电路中传播概率表达式以解决空间相关性问题,在此基础之上根据基于信号概率建立的解析动态功耗和静态功耗计算模型计算电路功耗.为进一步提高时间效率,该方法采用二元矩图表示概率表达式.使用基准电路对所提出方法进行了验证,并与其他采用不同信号概率计算方法的MPRM电路功耗计算方法进行了比较.结果表明所提出方法准确有效.     

一种快速精确查找逻辑电路失效位置的方法

提出了一种快速、精确查找组合逻辑电路失效位置的方法.这种方法对高辐射电路的可靠性评估很有意义.这种方法是通过对电路失效原理的分析,以及对失效概率的估计,来查找组合电路的失效位置.整个查找过程在Matlab平台上实现,用ISCAS'85基准电路进行实验,所有电路均采用0.18 μm标准CMOS工艺.结果表明,相对HSPICE随机仿真的方法,这种方法的速度提高了将近49倍,而且准确率达到94.7%.     

考虑时间因素的不同基本门故障概率计算

在门级电路的可靠性概率评估方法中,基本门的故障概率p一般人为设定或以常数形式出现.考虑到不同基本门的故障概率具有随时间变化的特性并结合其输入导线,本文构建了考虑输入负载的随时间变化的不同基本门的故障概率模型.理论分析与实验结果表明,基于弱链接模型的双峰对数正态分布更适合用来表示输入导线故障概率的时间分布.用本文方法、美国军用标准MIK-HDBK-217及Monte Carlo方法计算了ISCAS85基准电路的可靠度并进行了比较,还通过了行业标准的检验,结果验证了本文所构建模型的合理性.     

结合版图结构信息的基本门电路故障概率估计

在门级电路可靠性估计方法中,基本门的故障概率P一般采用经验值或人为设定.本文结合基本门的版图结构信息,综合考虑了设计尺寸及缺陷特性等因素,分析了不同缺陷模型下的粒径分布数据,给出了缺陷模型粒径概率密度分布函数的参数c的计算算法,并推导出了P的计算模型.理论分析与在ISCAS85及74系列电路上的实验结果表明,缺陷的分段线性插值模型能较准确地描述电路可靠性模型的低层真实缺陷.对ISCAS85基准电路采用本文方法所得到的电路可靠度与采用美国军用标准MIL-HDBK-217方法所得到的计算结果进行了比较,验证了本文所建P模型的合理性.     

卷积神经网络加速器中SEU的评估与加固研究

AI加速器在空间探索应用时需要考虑到空间辐射环境下SEE引发的软错误。在AI加速器设计过程中,需要对其SEE容错能力和可靠性进行评估,本文对Lenet-5的加速器进行了SEU故障注入,提出了一种从网络结构与电路模块映射的角度进行统计评估的方法。实验结果证明,在神经网络中,由于AI加速器计算数据大的特点,发生在权重和特征图的SEU错误在传播过程中有可能会被池化层屏蔽掉,SEU错误发生在靠近输出的层级比靠近输入的层级更容易导致识别准确率的下降。此外,实验还发现,在加速器电路模块映射中,负责产生使能信号和地址控制信号的控制单元CTRL比处理单元PE和存储单元MEM更容易被SEU错误所影响,严重时会影响加速器的正常运行。最后本文针对评估结果,进行了STMR加固措施对CTRL进行了加固,相比于FTMR,极大地减少了面积开销。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.