一个适用于无线内窥镜系统的ASK中频接收机电路

实现了一个适用于无线内窥镜系统的低功耗ASK中频接收机电路.该接收机包括一个用于补偿信道衰减的自动增益控制环、一个ASK解调器和基于能隙基准源的偏置电路,接收机电路已采用0.25μm CMOS工艺实现.测试结果表明,该电路可以从功率在-30～10dBm之间的中频信号中正确解调出数字基带信号,中频工作频率为20MHz.电路采用2.5V电源,消耗的电流仅为2.1mA.     

一个新型的带自动增益控制环路的低功耗ASK接收机

实现了一个适用于短距离无线系统的低功耗ASK中频接收机电路.该接收机包括一个用于补偿信道衰减的自动增益控制环和一个ASK检波器.自动增益控制环中采用了新型的限流跨导器和带前馈的差分峰值检测器,从而以较低的功耗实现了较高的压缩比及较快的响应速度.通过在峰值存储单元中引入零点及在峰值检测电路中引入前馈,实现了对自动增益控制环阻尼特性的调整.ASK检波器中传统的整流器和低通滤波器被整合为更紧凑的结构,从而进一步降低了功耗.仿真结果验证了本文所提技术的有效性.     

一个新型的带自动增益控制环路的低功耗ASK接收机

实现了一个适用于短距离无线系统的低功耗ASK中频接收机电路.该接收机包括一个用于补偿信道衰减的自动增益控制环和一个ASK检波器.自动增益控制环中采用了新型的限流跨导器和带前馈的差分峰值检测器,从而以较低的功耗实现了较高的压缩比及较快的响应速度.通过在峰值存储单元中引入零点及在峰值检测电路中引入前馈,实现了对自动增益控制环阻尼特性的调整.ASK检波器中传统的整流器和低通滤波器被整合为更紧凑的结构,从而进一步降低了功耗.仿真结果验证了本文所提技术的有效性.     

基亏LMH6505的中频信号调理电路设计

信号调理电路是一种在中频接收机中得到广泛应用的电路.针对中频数字接收机中对输入模拟信号的要求,设计一种适应性良好的信号调理电路.介绍自动增益控制(AGC)的原理,并给出基于可变增益放大器LMH6505的具体电路设计.该电路具有低功耗、增益可调范围宽和频率范围宽的特点,适用于一般的中频接收机.     

基于LMH6505的中频信号调理电路设计

信号调理电路是一种在中频接收机中得到广泛应用的电路。针对中频数字接收机中对输入模拟信号的要求,设计一种适应性良好的信号调理电路介绍自动增益控制（AGC）的原理,并给出基于可变增益放大器LMH6505的具体电路设计.该电路具有低功耗、增益可调范围宽和频率范围宽的特点,适用于一般的中频接收机。     

基于AD8367的压控增益放大系统设计

通信接收机的任务是从众多的电波中选出有用信号，并放大到解调器所要求的电平值后再由解调器解调，将频带信号变为基带信号。由于传输路径上的损耗和多径效应，接收机接收到的信号是微弱且又变化的，为保证信号还原或处理结果的可靠性，在接收机中频电路中通常都设计有自动增益控制（AGC）功能，使射频信号在接收机的中频输出稳定在一个固定的电平上。     

2.4GHz 0.35μm CMOS Gilbert下变频器

利用0 35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2 452GHz,2 45GHz和2MHz.测试表明:在3 3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

一种MLS接收机中频电路的设计与实现

介绍了 MLS 接收机中频电路的基本原理,结合工程应用实际,采用模拟集成电路的方法对中频电路进行了设计实现。与以往使用分立器件的设计相比,该方法的优点是集成度高、 功耗低,而且提高了电路的可靠性。该设计已在实际工程 MLS 接收机中得到良好的应用。     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz.测试表明:在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

扩频系统多通道相位差测量技术

论述了扩频无线电信号侦收和测向等应用领域中,在多通道天线和接收机后端采用数字处理手段,在低信噪比下实现多通道相位差精确提取的方法.阐述了多通道相位差提取的基本工程模型、中频信号采样处理方法、普通ASK调制信号的相位差提取方法,以及BPSK调制的扩频信号的相位差提取方法,给出了基于MATLAB7.0.1平台的仿真图形和结果.该技术已在工程中成功实现.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.