共查询到20条相似文献,搜索用时 781 毫秒
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根据算力的需求,人工智能(AI)技术主要分为云端AI处理和端侧的AI处理.在集中式人工智能解决方案中,嵌入式设备(智能音箱、可穿戴设备等)通常依赖云服务器实现人工智能能力. 相似文献
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阐述基于5G+AI的智能辅助诊疗系统的实施方法,包括诊疗设备5G升级改造、建设5G智慧诊疗中心边缘云平台、远程阅片及问诊、智能辅助诊疗、自动生成诊疗报告。 相似文献
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1 推动边缘AI发展的两大方面
从需求方面看,因为算力要求高,最初的AI都从云端智能开始,数据必须上传到云端处理,而随后的发展过程中产生了对于用户体验和数据隐私方面的问题.边缘AI能够大大减小延时问题,并且对于网络环境的要求较为宽松,极大地提升了用户体验.同时边缘AI在处理数据过程中不必上传至云端,能够很好地保障数据隐... 相似文献
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Raymond Steele 《电信纪事》2001,56(5-6):344-352
Commencing with the advancements that may be expected in 3G during the first decade of this century, we move on to anticipate subsequent developments based on what society might need and the technologies that may be required. The near demise of mobile satellite networks and removal of radio broadcasting from potential mobile radio bands will provide the necessary bandwidth for high capacity, high quality multimedia mobile services utilising a dense concentration of fibre networks coupled to radio cells of all sizes. The integration of many factors from high aerial platforms (haps) (that are located in the stratosphere and from terrestrial cells that can be adjusted in size and moved instantly to suit teletraffic changes) to picocells, body-LANs to the fixed network, software agents to soft telecommunications, will be discussed. Finally the possibility of our networks metamorphosing into a global brain, and how man-kind might adapt to this supra-intelligence will be addressed. 相似文献
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The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon. 相似文献
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p+-n-p+ BARITT diodes have been designed to give maximum output power at X band frequencies. Computed output power against frequency shows good agreement with measured powers. The dominant effect of the maximum n region electric field on output power is demonstrated. 相似文献
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The frequency and current dependence of the noise factor of tuned microwave amplifiers, utilising punchthrough injection transit-time diodes, has been determined. Noise factors as low as 10 and 11 dB were obtained from companion p+-n-p+ and p+-n-v-p+ structures, respectively, when tuned to frequencies in the vicinity of 7.5 GHz. 相似文献
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半绝缘GaAs中Mg~++P~+双注入研究 总被引:1,自引:0,他引:1
本文对Mg~+和P~+双离子注入半绝缘GaAs的行为进行了研究.发现不论是常规热退火还是快速热退火,共P~+注入都能有效地提高注入Mg杂质的电激活率,其效果优于共As~+注入,共P~+注入的最佳条件是其剂量与Mg~+离子剂量相同,电化学C—V测量表明,双注入样品中空穴分布与理论计算值接近,而单注入样品中则发生严重偏离,快速热退火较常规热退火更有利于消除注入损伤. 相似文献
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在有限环F2+uF2+…+u^k F2与F2之间定义一个新的Gray映射,证明了该映射是距离保持映射。考察了F2+uF2+…+u^k F2环上循环码,得到了F2+uF2+…+u^k F2环上循环码的生成多项式。最后,证明了F2+uF2+…+u^k F2环上循环码在新定义的Gray映射下的像是F2上的准循环码。 相似文献
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Punchthrough transit-time diodes have been constructed with both Schottky-barrier and diffused-junction emitters. The microwave and d.c. characteristics of these devices are strikingly similar. Either construction technique appears to be suitable for the future development of low-noise microwave sources. 相似文献