半导体激光束的准直技术

利用新颖的光纤技术,使半导体激光束发散角大(垂直方向发散角为40°、水平方向为10°)得到了很大改善;其成本低、简单可靠,可以达到发散角小于0.05°的水平。     

基于介电润湿液体棱镜阵列的光束调整器

为实现在三维空间上对不同光束(平行光、会聚光 、发散光)的调整,提出了一种基于介电润湿液体棱镜阵列的光束调整器。根据几何光学、 矩阵光学和介电润湿理论,推导出光学传递函数,分析了该光束调整 器的控光能力,讨论了工作电压对光束调整器调控性能的影响,并通过仿真模型的验证。结 果表明,该光束调 整器可以实现平行光的扩束、缩束、平移、会聚和发散;还可对发散光进行光束调整,改变 出射光的发散角度、 使其变成会聚光或平行光;同时,该光束调整器还可以实现对会聚光进行调节的作用,出射 光可以为会聚光、 平行光或发散光。当直径为5mm的平行光经光束调整器,其直径变化范围为3.08 mm,可左右平移 0~0.92 mm,其焦距f可在7.96 mm~∞(双层液 体界面为双凸形)范围内或在－∞~－25.99 mm(双层界面为双凹 形)范围内调节;对于发散角为20°的发散光,经过该光束调整器, 当出射光为发散光时,其发散角的变化范 围为0°~45.7°,当出射光为会聚光时,其会聚角的变化范围为0°~14.48°;对于会聚角为20°的会聚光,当出 射光为会聚光时,其会聚角的变化范围为0°~49.88°,而当出射光 为发散光时,其发散角的变化范围为0°~16.02°。     

基于双光斑外缘曲线的高能面阵LD发散角测量方法

提出一种适合高能面阵LD发散角测试的新方法.该方法以激光光束传输到不同距离处的2条光斑外缘曲线的几何特征为基础来求LD的发散角,而2条光斑外缘曲线分别由2个半径不同的半圆环探头的旋转扫描探测获得.该方法解决了高能面阵LD发散角测试中的2个关键问题:一是现有测试方法中把面阵LD的面发光直接当作点光源引起的测试误差;二是避免了因LD功率过大而损坏和烧毁探测器.实验表明:该测试方法能够准确、可靠地测试高能面阵LD的发散角.     

LD抽运Nd:YAG/KTP腔内倍频连续波1.2 W红光激光器

报道了用Ⅱ类相位匹配KTP(相位匹配角选为θ＝59.9°,Φ＝0°)对激光二极管(LD)侧向抽运的NdYAG腔内倍频的红光激光器.通过分析大功率抽运NdYAG棒热透镜效应的影响,优化设计了三镜折叠腔参数.采用镜片镀膜的方法使NdYAG工作在1319nm波长,经腔内倍频获得单一波长659.5nm的红光激光.在抽运电流13A和输出镜曲率半径为200mm时,达到1.2W的红光连续波输出.     

KTP光学参量振荡器输出激光的空间模式和光束质量

理论上通过二维傅里叶变换求解耦合波方程 ,分析了KTP光学参量振荡器 (OPO)信号光的空间分布 ;实验上利用Nd∶YAG倍频激光 ( 5 3 2nm)抽运非临界 (θ =90°,φ=0°) 及临界相位匹配KTP (θ =62 7°,φ=0°) OPO ,测量了参量光的空间分布、远场发散角及M2 因子等参数 ,讨论了抽运功率、谐振腔长、残余光后向二次抽运对OPO参量光的发散角和光束质量因子M2 的影响。     

小发散角量子阱激光器研究

使用三层平板波导理论分析了半导体量子阱激光器远场分布。针对大功率激光器讨论了极窄和模式扩展波导结构方法减小垂直方向远场发散角,得到了极窄波导结构量子阱激光器远场分布的简化模型,获得了垂直发散角的理论值,垂直方向远场发散角减小为28.6°;使用传输矩阵方法模拟了模式扩展波导结构量子阱激光器的近场光斑及远场分布,垂直方向远场发散角减小为16°。实验测试了极窄和模式扩展波导结构量子阱激光器的垂直发散角,理论结果与实验测试获得的发散角基本一致,实现了降低发散角的要求,获得了小发散角量子阱激光器。     

9.0μm锥形量子级联激光器

本文报道了波长为9.0μm的锥形量子级联激光器。与普通的脊形量子级联激光器相比,锥形量子级联激光器的水平远场发散角更小。系统的研究了锥形角度对脊形区宽度约为11μm的锥形量子级联激光器器件性能的影响,结果表明3°的锥形角是一个优化的角度,锥形角为3°时量子级联激光器具有较高的功率和仅为7.1°的水平远场发散角。     

窄发散角量子阱激光器的结构设计与分析

本文对ＧａＡｓ／ＡｌＧａＡｓ量子阱结构激光器中重要的结构参数与远场垂直发散角的关系作了系统的理论计算与分析，提出了实现２０°～３０°垂直发散角的有效途径，并同时研究了对激光器的光功率限制因子、阈值电流密度等重要参数的影响．     

小发散角高功率半导体激光器研究

在量子阱半导体激光器中,量子尺寸引起的衍射效应使半导体激光器的光束质量很差。分别限制结构的垂直结平面发散角在40°左右,使得光束整形系统比较复杂,限制了半导体激光器的直接应用。为解决这一问题,提出了降低垂直结平面发散角的要求。回顾了小发散角半导体激光器的技术发展及应用,对具有小发散角的模式扩展波导结构进行了理论模拟和实验验证,获得了优化的结构。采用MOCVD外延技术生长了外延片,制作了高峰值功率脉冲激光器,获得了快轴发散角小于25,°峰值功率大于80W的半导体激光器,在激光引信应用中获得良好效果。     

科技简讯

恩耐激光推出高亮度975nm单管半导体激光器世界领先的高功率半导体激光器制造商恩耐激光公司(nLightPhotonics Corp.)最近推出高亮度5W连续波975nm单管半导体激光器,采用标准的C-M ount和H H L封装。该半导体激光器是掺铒和掺钇光纤激光器和光纤放大器的理想泵浦源。此外,它也广泛应用于医疗和工业领域。发光区域宽度为200μm的5W975nm半导体激光器,工作电流为5.5A,工作电压为1.7V,快轴发散角(FW H M)小于38°和慢轴发散角(FW H M)小于10°。该公司能同时提供快轴准直透镜,其透过率高于95%,准直后的发散角(FW H M)小于2°。恩耐激…     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.