WSNs布局的粒子进化的多粒子群优化策略

在粒子进化的多粒子群算法基础上,提出了一种无线传感网络节点布局的优化策略.该策略通过多个粒子群彼此独立地搜索解空间,提高了算法的寻优能力,有效地避免了"早熟"问题,提高了算法的稳定性.仿真实验表明,与传统的粒子群算法相比,该算法有效覆盖率由75.36%提高到80.96%,收敛速度提高了19.4%.因此粒子进化的多粒子群优化策略具有比传统的粒子群算法更好的优化效果.     

基于改进粒子群算法的无线传感器网络覆盖优化

为了解决粒子群算法的无线传感器网络覆盖方法存在的容易出现局部收敛的问题,提出基于改进粒子群的无线传感器网络覆盖优化方法。分析基本粒子群算法进行无线传感器网络覆盖优化的过程,找出其存在的局部收敛问题,通过采用拟万有引力和库仑力两种拟物方案,在粒子速度进化过程中融入拟物力,对基本粒子群算法的速度修正过程实施优化,避免粒子群算法出现局部收敛问题,降低重复覆盖率,完成无线传感器网络覆盖优化。实验结果表明,改进粒子群算法具有更快的收敛效率,对无线传感网络的覆盖优化效果更好。     

基于改进粒子群算法的无线传感网络覆盖优化

针对传统粒子群算法容易陷入早熟陷阱而导致无线传感网络(WSN)的覆盖优化效果欠佳的现象,提出一种引入种子杂交策略的粒子群优化(PSO)改进算法。通过将前期的PSO算法寻优与后期的种子杂交策略相结合,从而完成覆盖性能的优化。综合理论分析与实验仿真可知,相比于其他算法,本文算法改善了覆盖率与RD指标,在改善网络覆盖性能方面具有一定优势。     

基于拟物力导向的量子粒子群优化算法的WSN节点部署研究

节点部署是无线传感器网络(Wireless Sensor Network,简称WSN)设计的一个重要方面,它将会影响网络的有效覆盖,连通性和能耗。粒子群算法(Particle Swarm Optimization,简称PSO)可以提高目标区域无线传感器网络的覆盖率。然而该算法在优化过程中易早熟收敛,影响覆盖的优化效果,并且算法复杂度较高。针对该问题文章在量子粒子群算法(Quantum Particle Swarm Optimization,简称QPSO)的基础上,结合拟物力导向的思想,提出了基于拟物力导向的量子粒子群优化算法。通过仿真实验得出,该算法加快了粒子的收敛速度,提高了WSN的覆盖率,同时算法的复杂度降低。     

引入模式搜索算子的粒子群优化算法

针对粒子群优化算法(PSO)在解决复杂的高维优化问题时容易陷入局部最优和收敛速度慢的问题,结合模式搜索算法较强的局部搜索能力,提出一种引入模式搜索算子的粒子群优化算法(HJPSO).为避免最优粒子陷入局部最优而导致整个种群出现搜索停滞,在PSO算法的迭代过程中加入判断粒子陷入局部最优的机制,当检测到早熟停滞迹象时,使用模式搜索算子对整个粒子群当前搜索到的历史最优位置进行模式搜索以帮助算法跳出局部最优点.标准测试函数的运行结果表明,该算法具有较强的跳出局部最优的能力,收敛速度较快,稳定性好.     

基于混沌粒子群优化的图像相关匹配算法研究

该文将混沌优化搜索技术应用于粒子群优化算法(PSO),提出了一种基于混沌搜索的粒子群优化算法(CPSO),该算法利用了PSO算法的收敛快速性和混沌运动的遍历性、随机性等特点,采用混沌初始化粒子初始位置,在运行过程中根据粒子群适应度的方差来自适应混沌更新粒子位置。几种典型函数的测试结果表明:CPSO提高了对多维空间的全局搜索能力,并可以有效避免早熟现象。将该方法用于图像相关匹配算法,提出了一种新的基于CPSO的图像相关匹配算法。实验结果证明该方法对解决噪声情况下的图像匹配问题十分有效。     

一种新的粒子群优化的图像匹配算法

针对粒子群算法在图像匹配中易陷入局部最优、搜索速度慢以及匹配精度不高的问题,提出一种新的粒子群优化的图像匹配算法。首先,以改进的非线性惯性权重对粒子群算法进行优化,以此来平衡粒子在全局和局部的搜索能力;其次,提出添加动态扰动项对速度进行扰动,避免粒子在算法后期速度停滞为零而陷入局部最优。仿真结果表明,该算法提高了粒子的全局搜索能力和收敛精度,有效防止早熟现象,与基于标准的PSO图像匹配算法相比,所提算法具有收敛速度快、鲁棒性好以及匹配精度高的特点。     

基于混沌粒子群优化的图像相关匹配算法研究

该文将混沌优化搜索技术应用于粒子群优化算法（PSO）,提出了一种基于混沌搜索的粒子群优化算法（CPSO）,该算法利用了PSO算法的收敛快速性和混沌运动的遍历性、随机性等特点,采用混沌初始化粒子初始位置,在运行过程中根据粒子群适应度的方差来自适应混沌更新粒子位置。几种典型函数的测试结果表明：CPSO提高了对多维空间的全局搜索能力,并可以有效避免早熟现象。将该方法用于图像相关匹配算法,提出了一种新的基于CPSO的图像相关匹配算法。实验结果证明该方法对解决噪声情况下的图像匹配问题十分有效。     

基于细菌觅食与粒子群的改进混合算法

针对粒子群优化算法（PSO）在优化过程中易陷入局部极值而产生“早熟”现象,文中提出一种基于细菌觅食与粒子群的改进混合算法。粒子群优化算法与细菌觅食优化算法的结合,增强了算法的全局搜索能力,使算法具有全局搜索能力强的优点。选用Matlab进行仿真实验,实验结果进一步显示了改进混合算法的优化能力优于基本PSO算法和基本BFO算法,收敛速度快,且具有较好的鲁棒性。     

改进粒子群算法的多峰值优化研究

粒子群优化算法对于多维函数的最优解搜索存在前期易陷入局部最优,后期收敛速度缓慢的问题.将改进的k-中心点聚类分析与PSO相结合提出了一种混合粒子群算法KM-PSO,用于多峰值问题的优化.在算法中,利用k-中心点聚类分析方法将粒子群划分成若干个子群,结合PSO的隐含并行搜索的优势增强了寻优性能.不仅增加了粒子间的信息交换,抑制了早熟收敛,还提高了全局寻优速度和计算精度.仿真实验结果表明,KM-PS0性能优于基本粒子群优化算法.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.