基于FFT的阵列方向图快速计算

分析了等距线阵方向图与傅立叶变换的一致性,用FFT算法进行阵列方向图快速计算。通过严格的数学推导,揭示变换序列与可见空间的关系,讨论了不同单元间距情况下的处理方法。文中结合实例,阐述了FFT算法在阵列方向图计算中的应用技巧,如扫描处理方法、指向分辨精度和边缘数据点估计,并指出用FFT算法计算阵列方向图其运算速度可提高一个数量级以上。     

DIF-2FFT算法的矩阵形式的DLP计算模式

快速傅里叶变换(FFT)是减少离散傅里叶变换(DFT)计算时间的算法。而在无线/移动通信系统中无线通信算法和多媒体应用处理算法中存在大量的矩阵或向量运算,均可以由DLP计算实现。本文研究的FFT算法就存在大量的矩阵运算,通过对FFT矩阵算法的分析,本文提出了在DLP计算模式下通过阵列计算机来实现FFT的快速算法,在MATLAB仿真平台上进行了传统算法与改进之后算法的比较,提出了进一步减少运算时间的FFT并行算法。     

递归算法的参数设置

提出了基于循环迭代运算的多路并行递归算法,代替传统的快速傅立叶变换(FFT)算法,进行有限长数据的离散傅立叶变换(DFT)。递归算法具有数据存储量少、计算量小、资源占用量与工作参数变化无关等特点。计算机仿真结果表明:递归算法不仅使所分析的频率在频率轴上可以选择任意实数值,而且时间分辨率和频率分辨率可调可控。递归算法的工作参数可以依据战术环境灵活设置与调整,非常适合对局部频段实时地进行信号检测、时频分析和精确的时、频参数测量,也可以和其它已有的算法配合使用。     

一种新型的快速模板匹配算法

提出了一种基于快速傅立叶变换的快速模板匹配算法。针对现有模板匹配算法运算量大,计算速度在现有技术条件下受到制约的问题,提出基于快速傅立叶变换的快速模板匹配算法,利用傅立叶变换中的卷积定理,结合快速傅立叶变换(FFT),将计算量大为减少,同时使用单指令多数据流(IMD)算法实现了加速,收到了良好的效果。     

用FPGA实现FFT算法

引言 DFT（Discrete Fourier Transformation）是数字信号分析与处理如图形、语音及图像等领域的重要变换工具,直接计算DFT的计算量与变换区间长度N的平方成正比。当N较大时,因计算量太大,直接用DFT算法进行谱分析和信号的实时处理是不切实际的。快速傅立叶变换（Fast FourierTransformation,简称FFT）使DFT运算效率提高1～2个数量级。其原因是当N较大时,对DFT进行了基4和基2分解运算。FFT算法除了必需的数据存储器ram和旋转因子rom外,仍需较复杂的运算和控制电路单元,即使现在,实现长点数的FFT仍然是很困难。本文提出的FFT实现算法是基于FPGA之上的,算法完成对一个序列的FFT计算,完全由脉冲解发,外部只输入一脉冲头和输入数据,便可以得到该脉冲头作为起始标志的N点FFT输出结果。由于使用了双     

离散傅里叶变换的算术傅里叶变换算法

离散傅里叶变换(DFT)在数字信号处理等许多领域中起着重要作用.本文采用一种新的傅里叶分析技术—算术傅里叶变换(AFT)来计算DFT.这种算法的乘法计算量仅为O(N);算法的计算过程简单,公式一致,克服了任意长度DFT传统快速算法(FFT)程序复杂、子进程多等缺点;算法易于并行,尤其适合VLSI设计;对于含较大素因子,特别是素数长度的DFT,其速度比传统的FFT方法快;算法为任意长度DFT的快速计算开辟了新的思路和途径.     

DFT-S-GMC无线接入系统56点快速傅立叶变换算法设计

提出了应用于DFT-S-GMC(DFT Spread generalized Multi-carrier)宽带无线接入系统中56点DFT/IDFT的快速算法.该算法组合Cooley-Tukey和Winogrgd算法的设计方法,将56点三次奇偶分解为8个7点的傅立叶变换,经特定的整序算法处理后,由Winograd算法得到各7点DFT/IDFT的快速算法,最后借鉴Cooley-Tukey算法的蝶形运算得到56点FFT/IFFT的运算结果.该算法的运算速度比复合数算法快若干倍,亦可推广用于设计N=P*2M(P=3,5,7,11等)这一类特殊点的FFT/IFFT算法.     

基于Matlab的DFT及FFT频谱分析

DFT及FFT是数字信号处理的重要内容。DFT是FFT的基础,FFT是DFT的快速算法,在MATLAB中可以利用函数FFT来计算序列的离散傅里叶变换DFT。基于此首先介绍了Matlab软件;其次给出了基于Matlab软件的DFT和FFT频谱分析的方法,利用Matlab软件方法,使得设计方便、快捷,大大减轻了工作量;最后结合实例给出了仿真结果。     

运用遗传算法结合FFT进行多单元失效阵列校准

提出了利用遗传算法（GA）结合快速傅立叶变换（FFT）方法来进行阵列失效的校准,通过引入傅立叶变换的变换域和角域的映射,在变换域中利用FFT计算个体阵列的阵因子,减少了GA评估个体的时间,从而大大提高了失效校准的速度。以一个-35分贝副瓣电平的32单元阵列为例,校准一单元失效和二单元失效的时间都减少了至少一个数量级,算法也可应用于两个以上单元失效的情况。     

多维并行快速傅里叶变换

与传统的通过逐行逐列分别做一维快速傅里叶变换(FFT)计算多维离散傅里叶变换(DFT)的方法不同,本文将多维同时并行处理,导出了一种更有效的计算多维DFT的并行快速傅里叶变换(PFFT)算法。     

Progress in electrophotography in Western Europe

A review is given of the progress in electrophotographic science and technology in Western Europe during the years 1967 to early 1971. University research work is mainly directed towards two areas: 1) the electrical and physical properties of photoconductors, such as selenium, chalcogenides, oxides, and organic materials; and 2) the sensitization of these photoconductors. Industrial research teams report on the preparation of electrophotographic layers on development and on image evaluation. A bibliography including scientific papers and patents published on this subject during said period completes this review.     

智能通信在楼宇自控系统中的应用

随着计算机技术、控制技术、通信技术及信息技术的飞速发展,人们对生活、办公环境安全性、舒适性的要求日渐增长,智能建筑应运而生。楼宇自动化控制系统是智能建筑的一个重要组成部分。通过结合具体的智能楼宇控制工程项目,在介绍系统概况的基础上,给出了系统的总体设计方案及子系统的监控方案,具有一定的实用价值。     

Advances in millimeter-wave subsystems in Japan

The authors describe the development trends and results of millimeter-wave systems in Japan in such fields as communication, radar, and measurement systems. The applications included are the W-40G waveguide transmission communication system, an automobile traffic control system using the 60-GHz band, a collision avoidance radar system for an automobile, a plasma electron density measuring system, and satellite communication. The authors describe the development of devices such as high-power FET amplifiers, traveling wave tube amplifiers (TWTAs), IMPATT amplifiers, low-noise amplifiers, and monolithic microwave integrated circuit (MMIC) devices used in constructing the millimeter-wave systems     

General Trend in Electrical Communications in Japan

Systems are currently being designed for higher reliability and greater economy. Larger transmission capacity is required to meet a rapid increase in recent communication demands instigated by the introduction of video and information communications facilities. More flexibility, to deal with the variety of communication modes to come, and smaller hardware dimensions, to overcome situations caused by the high population density, seem to be particularly sought in the communication technology of Japan. Research and development concentrate on these objectives. The following is an explanation of the present state of the art and general trends in this country.     

Progress in display-device development in Western Europe

A review of the basic research and industrial development of display devices in Western Europe during the years 1968 to early 1973 will be given. The display types considered are: 1) active displays such as cathode ray tubes, light-emitting diodes, electroluminescence cells, and gas discharge devices, and 2) passive displays such as laser displays, light valves, and ferroelectric and liquid-crystal devices.     

Designing in reliability in advanced CMOS technologies

Assessment of design implications due to degradation of CMOS devices is increasingly required in the latest technologies. This paper presents selected topics relevant to realize an efficient design-in reliability methodology in the latest generation CMOS technologies. NBTI is discussed in terms of characterization using On-The-Fly (OTF) methodology. Extension of OTF method is discussed using bias patterns to gain insights into NBTI under analog operation. A reliability simulation methodology is discussed against requirements for optimization and integration within an existing design flow. The features of this methodology are illustrated using some simple design examples.     

Switching conduction in ion-irradiated layers in GaAs

Experiments have been performed to investigate whether switching phenomena are observable in ion-irradiated GaAs. It is found that the V/I characteristics of H2+-and N+-irradiated layers show both negative resistance and switching from a high resistance to a low resistance state. Ion irradiation may thus be a useful method of fabricating switching devices.     

Electricity in China-generation in the People's Republic

Before the establishment of the People's Republic, China was a semi-colonial, semi-feudal society plagued by foreign interventions and internal power struggles. It was against this background that the electrical industry went through its infancy. Today, the People's Republic of China is facing an acute energy shortage, posing a problem which must be quickly overcome if the country's rapid industrialisation is to continue as planned. The author presents a brief history of power generation in China from 1949 to 1983 and examines possibilities for the future