MPLS技术以及在网络中的应用

详细论述了目前网络发展的新趋势，多协议标记交换（MPLS）技术的具体组成和图示表示，并且说明了MPLS在网络中的具体应用。     

IP网络是网络融合的主旋律

基于的IP网络技术是目前国内外主流运营商的一致选择。从今后的整体网络定位和业务发展趋势来看，逐步向网络边缘扩展的MPLS是面向传统和新型业务的核心承载技术，是实现网络融合的统一基础承载平台。随着技术及应用的发展，需要在MPLS网络中逐步部署MPLS OAM功能。MPLS主要用来提供成熟的BGP／MPLS方式的三层VPN和Martini方式的二层VPN业务。在全网统一的策略前提下，     

基于网络处理器路由转发的微码设计技术研究

针对网络技术和通信技术的飞速发展对路由器等网络核心设备的带宽和业务多样性提出了全新要求的问题,提出了一种基于网络处理器的多协议路由转发设计方案。该方案采用一款异构的网络处理器,结合IPv4、IPv6和MPLS(Muxtiprotocol Label Switch)路由转发规则,将路由转发任务合理分解到该网络处理器的四类微引擎上。实验结果证明,此实现方法能同时实现支持以上三种协议的路由转发应用,且能获得10Gbps线速级别的转发效率,满足人们对接入层面的路由转发需求。     

MPLS架构下的移动IP技术

本介绍了多协议标记交换(MPLS)和移动IP技术的基本原理，并在此基础上给出了工作在MPLS机制下的移动IP网络组成模型，同时描述该模型的基本工作原理。最后分析了MPLS架构下移动IP的技术优势并对其应用前景进行了阐述。     

MPLS技术与MPLS VPN应用

MPLS为解决基于IP交换的网络中的一些问题提供了可能，很可能成为下一代Internet骨干网的交换技术，以MPLS为基础的MPLS VPN技术与原来的VPN技术相比也有明显优势，根据MPLS技术的优势分析探讨了MPLS VPN技术的应用原理。     

未来IP网络的核心技术--MPLS

多协议标签交换（MPLS）技术是综合利用网络核心的交换技术和网络边缘的IP路由技术的优点而产生的。本文介绍了MPLS发展背景、MPLS的网络结构和工作原理、MPLS的核心技术和技术优点,并展望了MPLS的发展前景。     

MPLS在未来IP网络中的应用设想

分析了MPLS在未来IP网络中的可能的应用前景,认为信息骨干网络可能由光的MPLS和电的MPLS两层网络组成,并完成骨干网上的IP路由,边缘路由器完成边缘的IP路由交换,着重提出了光的MPLS的实现方法和基本原理及结构。     

MPLS—宽带网络新技术

依据当前Internet网络技术的发展趋势,介绍了一种新兴的宽带网络技术-多协议标签交换（MPLS）技术,重点介绍了MPLS技术的原理和主要特点,指出MPLS是未来网络传输交换技术的融合点,将成为最有竞争力的宽带网络技术。     

基于MPLS构造全IP结构的UMTS

作为下一代网络(NGN)中的重要技术，MPLS在未来统一的网络架构中有着美好的应用前景。本文着重描述用MPLS构造全IP的UMTS系统的架构，提出建立三个独立的MPLS域来构造全IP的UMTS承载网。并且分析这种新的架构下带来的好处和仍然存在一些问题。     

组建广东电信MPLS VPN网络

简要介绍了多协议标签交换的技术特点及优势，并在此基础上对MPLS VPN进行了分析，进而对广东电信建设MPLS网络、提供MPLS VPN业务的实现思路进行了较详尽的描述。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.