一种精确测量MOSFET晶圆导通电阻的方法

导通电阻的准确测量是低导通电阻MOSFET晶圆测试中的一个难点。要实现毫欧级导通电阻的测试,必须用开尔文测试法;但实际的MOSFET晶圆表面只有两个电极(G、S),另外一个电极(D)在圆片的背面,通常只能将开尔文的短接点接在承载圆片的吸盘边缘,无法做到真正的开尔文连接,由于吸盘接触电阻无法补偿而且变化没有规律,导致导通电阻无法精确测量。介绍了一种借用临近管芯实现真正开尔文测试的方法,可以实现MOSFET晶圆毫欧级导通电阻准确稳定的测量。     

介质壁加速器用GaAs光导开关的通态电阻测量

GaAs光导开关可作为紧凑型脉冲功率系统的主要器件,如光导开关在介质壁加速器中的应用。为了研究通态电阻对开关性能的影响,采用平板传输线和同轴电缆作为脉冲形成线,测量了3mm电极间隙的GaAs光导开关的通态电阻。测量结果表明：电极间隙为3mm的GaAs光导开关的通态电阻为14．9Ω,光导开关通态电阻的存在将导致开关热损伤,降低脉冲功率系统的电压输出能力,缩短GaAs光导开关的使用寿命。     

具有降场电极U形漂移区SOI-LDMOS的耐压特性

提出了一种具有降场电极U形漂移区SOI-LDMOS,借助2D泊松方程对其场分布进行解析分析和数值分析,结果证明该结构在与RESURF结构相同的耐压下,具有器件长度小,漂移区浓度高,导通电阻小的特点.这表明降场电极是一种缓和漂移区掺杂浓度和耐压之间矛盾的有效方法.该结构是一种器件耐压与导通电阻优化的新途径.     

放电电极对毛细管放电软X光激光的影响

自软X光激光发现以来,实现低激发阈、台式软X光激光一直是一个十分重要的研究方向.利用毛细管放电激励产生软X光激光,是实现台式软X光激光的主要方案之一.实验采用20 cm长的毛细管,利用X射线二极管(XRD)探测了毛细管放电抽运软X光46.9 nm激光输出.研究表明,放电电极的材料并不是影响激光输出质量的决定性因素.但考虑到电极元素的飞溅,在长时间的实验研究中,选择钼电极更为有利.电极形状在放电过程中只影响预脉冲的导通情况,而对激光影响并不大.在更长毛细管的实验中,选择锥状端面的电极将有利于预脉冲的导通,以便获得激光输出.     

具有降场电极U形漂移区SOI-LDMOS的耐压特性

提出了一种具有降场电极 U形漂移区 SOI- L DMOS,借助 2 D泊松方程对其场分布进行解析分析和数值分析 ,结果证明该结构在与 RESURF结构相同的耐压下 ,具有器件长度小 ,漂移区浓度高 ,导通电阻小的特点 .这表明降场电极是一种缓和漂移区掺杂浓度和耐压之间矛盾的有效方法 .该结构是一种器件耐压与导通电阻优化的新途径 .     

PSJ高压器件的优化设计

基于Semi-SJ(super junction)结构,提出了SJ的比例可以从0～1渐变的PSJ(partial super junction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件模拟结果和实验结果相比较.讨论了BAL(bottom assist layer)部分穿通因素η、p型区深度归一化参数r、p型区深宽比A以及PSJ漂移区掺杂浓度是否统一对PSJ高压器件比导通电阻的影响.其理论结果和器件模拟结果相吻合,为设计与优化PSJ高压器件提供了理论依据.PSJ结构特别适于制造工艺水平不高、很难实现大的p型区深宽比的情况,为现有工艺实现高压低导通电阻器件提供了一种新的思路.     

新产品与新技术（72）

超薄型连接器连接高密度挠性基板 DKN研究机构推出一种超薄型连接器连接高密度挠性基板的方法,不同于传统的插头座连接、插脚焊接和各向异性导电材料粘接。新方法称为UTF连接,UTF连接器是有微小凸点的增强板,把FPCB连接盘与刚性PCB连接盘对准,覆盖UTF连接器并且微小凸点嵌入连接盘的孔中,达到FPCB连接盘与刚性PCB连接盘重叠固定并连通。另一种是FTF连接,是用UTF连接器实现FPCB与FPCB之间导通连接。     

PSJ高压器件的优化设计

基于Semi-SJ(super junction)结构,提出了SJ的比例可以从0～1渐变的PSJ(partial super junction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件模拟结果和实验结果相比较.讨论了BAL(bottom assist layer)部分穿通因素η、p型区深度归一化参数r、p型区深宽比A以及PSJ漂移区掺杂浓度是否统一对PSJ高压器件比导通电阻的影响.其理论结果和器件模拟结果相吻合,为设计与优化PSJ高压器件提供了理论依据.PSJ结构特别适于制造工艺水平不高、很难实现大的p型区深宽比的情况,为现有工艺实现高压低导通电阻器件提供了一种新的思路.     

一种新型无源MEMS万向碰撞开关

采用MEMS体Si加工工艺和圆片级封装技术,开发了一种基于特种运输中的新型无源MEMS万向碰撞开关。开关选用弹簧-质量-阻尼的典型碰撞结构,对惯性加速度计敏感,以碰撞接触的形式提供导通电阻信号,并拥有500g径向360°和1000g纵向碰撞触发,单个器件可以实现多个器件的功能。经过仿真设计和工艺研究,最终完成了开关的制作,封装后体积后为6.6mm×5mm×2.4mm。经测试表明开关实现了初始的设计阈值,导通电阻约10Ω,导通时间约10μs,验证了抗5000g冲击能力,它具有体积小、重量轻、高可靠、低成本,可反复使用等特点,在可靠性跌落试验、汽车安全碰撞试验和飞行器上具有广泛的应用前景。     

VDMOSFET低导通电阻改良研究

文章通过对VDMOSFET导通电阻模型的分析,结合VDMOSFET芯片生产过程中用到的等离子刻蚀工艺理论,探索通过优化刻蚀工艺以改善VDMOSFET器件导通电阻的途径。文中以实际VDMOSFET生产的引线孔刻蚀工艺为例,阐述了通过SOFT-ETCH工艺,改善接触孔表面损伤以达到降低VDMOSFET导通电阻的实现方法,通过详实的实验数据对比,证实SOFE-ETCH工艺对导通电阻的改良作用。     

Interconnection of multichannel polyimide electrodes using anisotropic conductive films (ACFs) for biomedical applications

In this paper, we propose a method for interconnecting soft polyimide (PI) electrodes using anisotropic conductive films (ACFs). Reliable and automated bonding was achieved through development of a desktop thermocompressive bonding device that could simultaneously deliver appropriate temperatures and pressures to the interconnection area. The bonding conditions were optimized by changing the bonding temperature and bonding pressure. The electrical properties were characterized by measuring the contact resistance of the ACF bonding area, yielding a measure that was used to optimize the applied pressure and temperature. The optimal conditions consisted of applying a pressure of 4 kg f/cm(2) and a temperature of 180 °C for 20 s. Although ACF base bonding is widely used in industry (e.g., liquid crystal display manufacturing), this study constitutes the first trial of a biomedical application. We performed a preliminary in vivo biocompatibility investigation of ACF bonded area. Using the optimized temperature and pressure conditions, we interconnected a 40-channel PI multielectrode device for measuring electroencephalography (EEG) signals from the skulls of mice. The electrical properties of electrode were characterized by measuring the impedance. Finally, EEG signals were measured from the mice skulls using the fabricated devices to investigate suitability for application to biomedical devices.     

Adhesion and Reliability of Anisotropic Conductive Films (ACFs) Joints on Organic Solderability Preservatives (OSPs) Metal Surface Finish

The effect of final metal finishes of Cu electrodes on the adhesion and reliability of anisotropic conductive film (ACF) joints was investigated. Two different metal surface finishes, electroless Ni/immersion Au (ENIG) and organic solderability preservatives (OSPs) coated on Cu, were selected in this study for ACF bonding. The adhesion strength of ACF/OSP joints was higher than that of ACF/bare Cu and ACF/ENIG joints. The fracture sites of the ACF/bare Cu and ACF/ENIG joints were ACF/metal interfaces, while those of ACF/OSP joints were inside the ACF. Transmission electron microscope (TEM) and Fourier-transform infrared (FT-IR) analyses showed that the OSP coating layer on the Cu electrodes reacted with the epoxy resin of the ACFs but still remained at the bonding interface. According to the in-depth X-ray photoelectron spectroscopy (XPS) analysis, additional C-N bonds formed after the OSP-epoxy reaction and the outermost nitrogen of the OSP layer participated in curing of the epoxy resin of the ACF. Therefore, the OSP layer acted as an adhesion promoter to ACFs. Furthermore, this role of the OSP layer enhanced the reliability of the ACF/OSP joints under high temperature and humid environments, as compared to the ACF/ENIG joints.     

Study of the Formation of Bubbles in Rigid Substrate-Flexible Substrate Bonding Using Anisotropic Conductive Films and the Bubble Effects on Anisotropic Conductive Film Joint Reliability

The formation of process-related bubbles that become entrapped inside the anisotropic conductive film (ACF) layer during bonding processes remains an issue. The formation of these bubbles is strongly influenced by the process variables, such as bonding pressure and bonding temperature. Therefore, bonding process variables of bonding temperature, bonding pressure, and type of flexible substrate (FS) were changed in order to investigate the effects of the changes as they concern the formation of bubbles. According to the results, the tendency toward bubble formation was closely related to these three factors. The bubble area increased as the bonding temperature increased. Moreover, the shape and tendency of bubbles coincided with temperature distribution in␣the ACF layer. Two different types of FS, each with different surface roughnesses and energies, were used. The bubbles formed only on the FS with the larger roughness and lower surface energy. According to the results from a surface energy measurement of FS types using goniometry, a FS with a higher surface energy is favorable for a bubble-free assembly, as the higher surface energy provides better wettability. In addition, in order to investigate the effect of bubbles on the reliability of ACF joints, the pressure cooker test (PCT) was performed, and all samples with bubbles electrically failed after 72 h of a PCT, as the process-related bubbles provided a moisture penetration path and entrapment site for moisture. However, all type 1 test vehicles (TVs) survived even after 120 h of a PCT. Therefore, Ar and O₂ plasma treatments were performed on the FS with the lower surface energy in order to improve the surface energies and wettability. Following this, the bubbles were successfully removed at rigid substrate (RS)–FS bonding joints using ACFs.     

Anisotropic Conductive Film Bonding by Making Use of a High-Power Diode Laser

Anisotropic conductive film (ACF) bonding between liquid crystal displays (LCDs) and driver integrated circuits (ICs) is one of the key technologies for developing high-resolution LCDs. The bonding pitch between LCD and tape carrier package (TCP), which influences the total reliability of LCD modules, depends on the characteristics and bonding conditions of ACF used. So, the bonding process between TCP and a glass panel with ACF using a high-power diode laser as a heat source for curing is preliminarily tested in this experiment. Also, laser transient thermal simulation was performed to analyze the thermal response of the assembly process for a package using ACF. The temperature on the ACF layer goes up to 180 degC (ACF curing temperature) within 1 s after exposure to laser light. This paper reports an effective bonding method using a diode laser, which accomplishes a fine-pitch ACF bonding and determines the optimum ACF bonding condition effectively     

Current-carrying capacity of anisotropic-conductive film joints for the flip chip on flex applications

The effect of the substrate-pad physical properties (surface roughness and hardness) on the current-carrying capacity of anisotropic-conductive film (ACF) joints is investigated in this work. Flip chips with Au bumps were bonded to the flexible substrates with Au/Cu and Au/Ni/Cu pads using different bonding pressure. It was found that the current-carrying capacity of ACF joints increased to a maximum value with the rise of the bonding pressure; then, it reduced if the bonding pressure continually increased. The maximum average value per unit area of Au/Ni/Cu pad and Au/Cu pad ACF joints is about 93 μA/μm² and 118 μA/μm², respectively, at 100-MPa bonding pressure. The variation trend of connection resistance is the opposite of current-carrying capacity. The variation of current-carrying capacity (or connection resistance) of Au/Cu pad joints is larger than that of Au/Ni/Cu pad joints. The current-carrying capacity is related to the variation of the resistance of ACF joints. The connection resistance of ACF joints depends primarily on the particle constriction resistance (R_coi), R_coi ∞ 1/a, where “a” is the radius of contact spot. A smaller contact area results in larger joule heat generation per unit volume (Q_g), Q_g ∞ 1/a⁴, which preferentially elevates the temperature of the constriction. The raised temperature increases the resistance because of the temperature-dependent coefficient of the metal resistivity. The theory of tribology is used to explain the difference between Au/Cu pad and Au/Ni/Cu pad ACF joints. For the Au/Cu pad ACF joints, the deformation of the particles’ upper and bottom sides is nearly symmetrical; the contact between conductive particles and pad has the character of “sliding contact,” especially under high pressure. For the Au/Ni/Cu pad ACF joint, the contact between particles and pad determined the conduction characteristics of ACF joints. It has the character of “static contact.” Thus, the current-carrying capacity (or connection resistance) of Au/Cu pad joints is more sensitive to the bonding pressure.     

Effects of different bonding parameters on the electrical performance and peeling strengths of ACF interconnection

The effects of different bonding parameters, such as temperature, pressure, curing time, bonding temperature ramp and post-processing, on the electrical performance and the adhesive strengths of anisotropic conductive film (ACF) interconnection are investigated. The test results show that the contact resistances change slightly, but the adhesive strengths increase with the bonding temperature increased. The curing time has great influence on the adhesive strength of ACF joints. The contact resistance and adhesive strength both are improved with the bonding pressure increased, but the adhesive strengths decrease if the bonding pressure is over 0.25 MPa. The optimum temperature, pressure, and curing time ranges for ACF bonding are concluded to be at 180–200 °C, 0.15–0.2 MPa, and 18–25 s, respectively. The effects of different Teflon thickness and post-processing on the contact resistance and adhesive strength of anisotropic conductive film (ACF) joints are studied. It is shown that the contact resistance and the adhesive strength both become deteriorated with the Teflon thickness increased. The tests of different post-processing conditions show that the specimens kept in 120 °C chamber for 30 min present the best performance of the ACF joints. The thermal cycling (−40 to 125 °C) and the high temperature/humidity (85 °C, 85% RH) aging test are conducted to evaluate the reliability of the specimens with different bonding parameters. It is shown that the high temperature/humidity is the worst condition to the ACF interconnection.     

FOG邦定工艺及其不良分析

根据ACF材料的组成和连接原理介绍了FOG邦定工艺(包括ACF预贴、预邦定、主邦定和检验);阐述了FOG邦定工艺的关键控制点:压力控制、温度控制及高温状态下压头的平行度要求;通过图表和数据分析提出了不良现象的分析以及相应的解决方案.FOG邦定工艺及其关键控制点的研究有利于提高相关工艺制程的合格率.     

Highly reliable flip-chip-on-flex package using multilayered anisotropic conductive film

Anisotropic conductive film (ACF) has been used as interconnect material for flat-panel display module packages, such as liquid crystal displays (LCDs) in the technologies of tape automated bonding (TAB), chip-on-glass (COG), chip-on-film (COF), and chip-on-board (COB). Among them, COF is a relatively new technology after TAB and COG bonding, and its requirement for ACF becomes more stringent because of the need of high adhesion and fine-pitch interconnection. To meet these demands, strong interfacial adhesion between the ACF, substrate, and chip is a major issue. We have developed a multilayered ACF that has functional layers on both sides of a conventional ACF layer to improve the wetting properties of the resin on two-layer flex for better interface adhesion and to control the flow of conductive particles during thermocompression bonding and the resulting reliability of the interconnection using ACF. To investigate the enhancement of electrical properties and reliability of multilayered ACF in COF assemblies, we evaluated the performance in contact resistance and adhesion strength of a multilayered ACF and single-layered ACF under various environmental tests, such as a thermal cycling test (−55°C/+160°C, 1,000 cycles), a high-temperature humidity test (85°C/85% RH, 1,000 h), and a high-temperature storage test (150°C, 1,000 h). The contact resistance of the multilayered ACF joint was in an acceptable range of around a 10% increase of the initial value during the 85°C/85% RH test compared with the single-layered ACF because of the stronger moisture resistance of the multilayered ACF and flex substrate. The multilayered ACF has better adhesion properties compared with the conventional single-layered ACF during the 85°C/85% RH test because of the enhancement of the wetting to the surface of the polymide (PI) flex substrate with an adhesion-promoting nonconductive film (NCF) layer of multilayered ACF. The new ACF of the multilayered structure was successfully demonstrated in a fine-pitch COF module with a two-layer flex substrate.     

Thermal stability performance of anisotropic conductive film at different bonding temperatures

In this work the effect of different bonding temperatures on the thermal stability of anisotropic conductive films (ACFs) was investigated. A thermogravimetric analyzer (TGA) was utilized to determine the thermal decomposition temperature of ACF. The experimental results showed that the temperature for maximum decomposition rate of ACF, T_m decreased with increasing bonding temperature. The results obtained from Fourier transform infrared spectroscopy (FTIR), which was used to examine the curing degree and also chemical changes in the ACF, showed some networks scissoring happened on C–N bond during the bonding process. This was the main reason why the ACF bonded at high temperature 225.0 °C, gave relatively low thermal stability. Four point probe was used to measure the contact resistance performance before and after thermal aging at 260 and 300 °C. The contact resistance results suggested that ACF bonded with 10 s at 205.0 °C, yielding a curing degree of 85.0% was the best bonding parameter to obtain a low contact resistance after thermal aging. FTIR results showed there was a significant increase in the absorbance peak of carbonyl group after thermal aging. Thermal oxidation reactions which were taken place at high bonding and aging temperature had broken the polymer networks in the ACF and caused electrical failure.