一种基于资源动态分配的光突发装配新技术

在粗颗粒分类基础上提出了一种新的光突发装配技术。它包括两个方面：映射规则，主要解决某一优先级光突发可以装配的类别分组，提出了S映射、Q映射和TQ映射3种规则，其差别主要在于映射是否具有自适应性；动态门限装配能力分配方案，即ATQ-DT，主要解决如何动态、合理地分配光突发装配能力。TQ映射和ATQ-DT可随服务质量(QoS)要求和负载情况的变化而自动调整映射关系和装配门限。经仿真表明：它们的组合，即“TQ映射 ATQ-DT”在保证各分组类别的分组损失率(PLP)上效果最为明显。     

OTN中ODU_k时钟的抖动性能要求

抖动是影响光通信质量的重要因素.文章首先简单介绍了光传送网(OTN)中的4种光数据单元(ODUk)时钟,然后介绍了ITU-T建议对这4种ODUk时钟的输出抖动、抖动容限以及抖动传递函数的规定,并具体分析了去映射器时钟ODCP的抖动,最后给出了一种异步去映射的实例以及抖动测量结果.     

基于不同映射的光传送网的时钟性能仿真

文章对光传送网(OTN)新的体系架构进行了建模,运用一种新的映射方式将客户信号适配到OTN模型中进行传送.通过对接收端时钟和理想时钟的对比,分析了新旧映射方式对OTN时钟性能产生的影响,证明了新映射方法具有对时钟性能影响更小的优点.此模型和所得结论可帮助光网络系统设计人员在系统设计前衡量和分析网络时钟的性能,以及预估各种映射方式对时钟性能的影响.     

基于DHT的光OFDM系统PAPR抑制算法

针对光OFDM系统存在高峰均功率比(PAPR),提出了一种基于离散哈特利变换(DHT)的选择映射抑制算法。采用快速哈特利逆变换(IFHT)代替传统的快速傅立叶逆变换(IFFT)和Hermi t i an对称算法,并结合非对称限幅法产生满足光OFDM系统要求的正、实值信号送入光纤信道。     

光传送网中负载抖动累积的分析

光传送网(OTN)中由于信号的复用与映射和3R再生器等技术的使用会产生抖动,而抖动会对网络的信号质量产生影响.文章分析了负载信号映射抖动以及经过多个站点后的抖动累积.首先结合实际应用建立分析模型,然后在时域上分析模型得出抖动累积分析式,最后通过仿真得出结果.     

自由空间光通信中的带符号光正交空间调制

【目的】针对光正交空间调制(OQSM)中频谱效率较低和系统吞吐量受限的问题,文章在自由空间光通信(FSOC)中提出了一种带符号的光正交空间调制(SOQSM)方案;另外,针对OQSM性能分析时所用信道不适合所有湍流的情况,文章采取适合所有湍流强度的Málaga信道对系统的误码性能进行分析。【方法】首先,该方案在发送端将输入的二进制比特流划分为5个部分,第1个部分用于星座符号映射,后4个部分用于激光器映射;然后,星座符号映射用于传输星座符号及其逆符号的实部和虚部;激光器映射分为同相相位与正交相位两部分,用于激活激光器的序列映射;最后,通过信道进行传输,在接收端进行信号的接收和处理。【结果】相比OQSM,SOQSM在一个传输周期内空间域额外携带了2log₂N_t比特的信息,并在符号域和空间域分别计算出平均误码率上界,最终得到SOQSM方案的平均误码率上界,其中计算平均误码率上界的方法具有较好的收敛性。该方案较大程度地提高了系统的频谱效率和传输速率,拥有较好的误码性能。【结论】蒙特卡洛仿真结果表明：在频谱效率相同时,相比光空间调制(OSM)和OQSM,...     

一种自适应光突发装配映射机制及性能仿真

分组粗颗粒分类因有良好的扩展性,可作为OBS(Optical Burst Switching)网络的QoS(Quality of Service)实现基础。然而OBS网络因其固有限制而只能支持较少的突发优先级,因此OBS常采用多类别光突发装配技术。该文在粗颗粒分类基础上,提出了一种新的适用于这类装配的映射机制TQ-Map,即确定某一优先级光突发可以装配哪些类别分组。自适应性是该机制的突出特点,主要体现在:映射关系能随各类分组的QoS要求和负载的改变而自动进行调整。仿真表明:TQ-Map机制的自适应性能有效保证突发装配与上层QoS要求相匹配(以分组损失率为衡量指标)。     

弹性光传输基础设施上动态透明虚拟网络嵌入

提出了一个新的动态透明的虚拟网络嵌入（VNE）算法。该算法基于弹性光传输基础设施,同时考虑节点映射和链路映射,用于光正交频分复用（O-0FDM）的网络虚拟化。对每一个虚拟光网络（VON）的请求,该算法首先根据各光纤链路的频谱使用将底层光网络转化成一个分层辅助图,然后在该辅助图的单层上应用一个考虑了所有底层节点的本地信息的节点映射完成链接映射。仿真结果表明,该算法考虑了O-OFDM网络的独特性,并且由于算法提供较低的VON阻塞概率,优于直接应用VNE的参考算法。实际拓扑结构的仿真结果也表明,嵌入的底层路径的平均距离很好地被控制在O-OFDM信号的典型传输范围内。     

OCDMA技术的研究现状及发展

OCDMA技术是新一代的全光技术,可以广泛用于光信道多路复用、光网络多址接入、光码标记交换核心网、光信号安全传输、光纤传感以及光栽无线系统等.概述了光码分多址(OCDMA)技术的研究现状、主要关键技术,并展望其发展趋势和应用前景.     

基于光标签的光分组交换系统研究

光码分复用(OCDM)系统在光域对各路信号进行光编/解码,对用户数据进行全光信号处理,但是用户数目受到光标签数量的限制.光分组交换技术具有高速率、对数据速率和格式透明等优点,更能适应快速变化的网络环境,但存在光标签的提取、更新和竞争的难题.介绍了一种新型的基于WDM(波分复用)和OCDM的光分组交换系统,结合了光码分多址(OCDMA)技术和光分组交换(OPS)技术的优点,既扩展了系统用户容量又避免了对标签进行电域的处理,实现了数据的全光交换.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.