差分过孔焊环及反焊环对高速信号完整性影响的实验研究

借助矢量网络分析仪研究了高速印制电路板信号层差分阻抗过孔焊环与相邻层反焊环尺寸对差分过孔阻抗、高速信号插入损耗及回波损耗的影响情况。结果表明,当焊环尺寸从2mil逐渐增大至 12mil时,过孔阻抗从84Ω 逐渐减小至75.8Ω,差分链路上的回波损耗及插入损耗则随阻抗匹配度减小而劣化,当相邻层反焊环尺寸从 8mil逐渐增大至20mil时, 过孔阻抗从79Ω逐渐增大至 84.6Ω,差分链路上的回波损耗及插入损耗则随阻抗匹配度增加而减小。     

背钻Stub对高速信号完整性影响的实验研究

利用内层导电两次背钻工艺对同一设计的36层高速PCB的差分过孔背钻后预留不同长度的Stub,然后基于频域法 并借助矢量网络分析仪对上述差分过孔及其所在90Ω的差分阻抗线的信号完整性进行了研究。结果表明,内层导电两次背钻工艺可以大幅减小Stub长度,从而提升高速信号在PCB中传输完整性,当Stub长度从60mil降至6mil时,对应的过孔因容性突变效应减弱,阻抗由69.2Ω上升至94.8Ω,过孔阻抗一致性提升使得PCB的回波损耗及插入损耗均呈现出降低趋势,当Stub长度为6mil时?PCB的回波损耗在较宽的信号频率范围内均小于-15ｄＢ,表现出良好的信号完整性。     

电流返回路径分解的信号完整性分析方法

提出了一种适用于高速互连电路的信号完整性快速仿真方法。根据电流返回路径 不同,该方法将有过孔的三维互连结构分解为电源平面对阻抗模型和微带线模型,先单独分 析两种模型特性,再级联以求解整个互连结构特性。与全波仿真方法相比,本方法在保证准 确度的前提下可将仿真时间从95 min降低至1 min以内。分析了电路板参数、去耦电容和短 路孔对信号完整性的影响,结果表明插入损耗由电源平面结构在过孔位置处的自阻抗决定。 在工程设计中,可采用减小电源平面对结构厚度、添加去耦电容和选择适当的过孔位置等方 法提高信号完整性     

FC-CBGA封装中高速差分信号过孔的设计与优化

对FC-CBGA封装中高速差分信号过孔的设计与优化问题进行研究,分析了采用堆叠孔、增加地回流孔和增大过孔反焊盘尺寸这三种优化方法对减小电容和电感不连续性,以提高过孔电性能的具体影响.时频域仿真验证了所述优化方法能够有效降低高速差分信号插入损耗及回波损耗,提高信号过孔阻抗,改善高速差分信号传输性能.     

高速PCB过孔设计研究进展

传输线连续性问题已成为当今高速数字电路设计的重点,尤其是多层PCB中大量使用的过孔结构。随频率的增加和上升时间的缩短,过孔阻抗不连续以及寄生电容、电感会引起信号反射和衰减,并进一步导致信号完整性（SI）问题。综述了高速电路中单端和差分过孔的孔径、孔长度等设计参数对阻抗连续性和S参数的影响,并介绍了三种提高过孔信号传输质量的方法,包括避免多余短柱、非穿导技术以及为过孔信号提供返回路径。本文能够为高速数字电路设计者进行过孔信号完整性判定提供参考。     

过孔转换信号完整性分析的区域分解有限元法

提出了一种基于区域分解的二维有限元法分析多层印制电路板电源/地平面中过孔转换结构的信号完整性.过孔电流产生的电磁场呈三维结构,其中,一部分电磁波沿过孔轴向传输,另一部分电磁波在电源/地平面间沿径向传播.采用一虚拟柱面将求解区域分割为过孔区和电源/地平面区.将过孔区建模为以周向磁场为主分量的二维轴对称问题,而将电源/地平面区建为以垂直电场为主分量的二维模型.首先求解电源/地平面区的二维边值问题获得分割边界上节点的波阻抗,然后将该波阻抗代入过孔区模型中分割边界节点的边界条件,从而计算出过孔信号传输的S参数.所提方法通过模型缩减可实现对微细过孔结构信号完整性的精确快速计算,且采用全波电磁场分析软件对算法的有效性和准确性进行了验证.     

高速PCB单端过孔研究

在高速数字电路设计中,过孔的寄生电容、电感的影响不能忽略,过孔在传输路径上表现为阻抗不连续的断点,会产生信号的反射、延时、衰减等信号完整性问题。文章采用矢量网络分析仪研究了过孔长度、过孔孔径、焊盘/反焊盘直径对过孔阻抗的影响。通过在信号孔旁增加接地孔,为过孔电流提供回路方法,提高过孔阻抗的连续性,并有效降低过孔损耗。此外,文章还探讨了过孔多余短柱对过孔阻抗及损耗的影响。本研究可为高速数字电路过孔设计和优化提供依据。     

过孔阻抗控制及其对信号完整性的影响

传输线的连续性问题是高速数字电路设计的重点,尤其是高速多层PCB中的过孔结构。随频率的增加和上升时间的缩短,过孔阻抗不连续、寄生电容和电感会引起信号反射和衰减,并导致信号完整性问题。本研究采用矢量网络分析仪研究了单端微带线上过孔孔径、焊盘、反焊盘大小对阻抗连续性的影响,并通过为过孔信号提供返回路径,提高了过孔阻抗连续性与信号完整性。     

一种DC到40GHz测试结构的设计

高速信号在传输的过程中将遇到信号完整性的问题的困扰,尤其当信号速率超过10 Gb/s时,当传输结构发生变化的时候,在导体之间传输的场将发生变化,传输过程的阻抗将发生变化。通过对传输结构变化的地方进行修正,可以对阻抗变化进行一定的补偿,减小结构变化处带来的信号反射,减小信号传输损耗,最终整个测试板在40 GHz时仿真损耗仅为1.1 dB,并通过两个测试结构对接进行了S参数和眼图的测试评估。     

基于正交设计的硅通孔信号完整性分析

针对硅通孔(Through Silicon Via;TSV)高度、直径和绝缘层厚度三个结构参数建立了25种不同水平组合的HFSS仿真模型,获取了这25种TSV的回波损耗和插入损耗并进行了方差分析。结果表明:随信号频率升高,TSV最大表面电场强度和插入损耗减小而回波损耗增大;在置信度为99%时,TSV高度是影响回波损耗和插入损耗的显著性因素;TSV直径和绝缘层厚度对回波损耗和插入损耗影响均不显著;TSV高度对回波损耗和插入损耗影响最大,其次是TSV直径,最后是绝缘层厚度。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.