片上集成三电极体系微电极阵列的表征

设计制作了片上集成三电极体系微电极阵列。工作电极分为圆形和方形两种,电极特征尺寸为100~900μm,工作电极与对电极间距为50~200μm。利用循环伏安法,在氧化还原电位探针二茂铁甲醇的作用下,对各三电极微系统进行了电极性能表征,具体分析了工作电极的形状、大小、与对电极的间距对输出特性的影响,为片上集成三电极体系的微电极阵列的设计优化提供了实际依据。     

片上集成三电极体系微电极阵列的表征

设计制作了片上集成三电极体系微电极阵列.工作电极分为圆形和方形两种,电极特征尺寸为100～900 μm,工作电极与对电极间距为50～200 μm.利用循环伏安法,在氧化还原电位探针二茂铁甲醇的作用下,对各三电极微系统进行了电极性能表征,具体分析了工作电极的形状、大小、与对电极的间距对输出特性的影响,为片上集成三电极体系的微电极阵列的设计优化提供了实际依据.     

用于酵母细胞电阻抗检测的集成微电极阵列微流控芯片的有限元仿真研究

出芽酵母已经成为衰老、寿命研究的理想细胞模型。我们提出了一种集成微电极阵列微流控芯片的设计结构,该芯片结构具有阵列排布式捕获-剪切结构及与之对应的微电极阵列,用于对被捕获酵母单细胞进行高通量电阻抗检测,尤其是利用电阻抗信号检测酵母细胞每一个子细胞的剪切去除事件。在本文中,我们对该设计结构进行了有限元建模仿真研究,以优化用于电阻抗检测的集成微电极阵列的关键参数设置。通过有限元建模和仿真计算,我们分析了待测响应电流分布以及不同行列间距下邻近细胞对待测信号的影响。为了在减小邻近细胞的存在对待测信号干扰的同时,实现酵母子细胞剪切去除事件的高灵敏度电阻抗检测,我们依据仿真结果优化出微电极阵列的行列间距分别为125 μm、100 μm。本研究中的仿真分析结果对于优化集成微电极阵列微流控芯片的设计,提升电阻抗单细胞传感检测的灵敏度和集成度具有重要意义,我们提出的设计结构有望发展为基于电阻抗谱的高通量酵母复制衰老寿命监测平台。     

阵列式CMOS细胞电信号传感芯片

介绍了一种采用0.6μm标准CMOS工艺实现的阵列式细胞电生理信号传感芯片。该芯片集成了6×6单元有源传感阵列、模拟多路选择器、输出缓冲器、参考源和数字控制电路,实现了传感电路和后端信号处理电路的单片化集成。传感单元面积为60μm×60μm,包含15μm×15μm的传感电极和有源预处理电路,线性放大幅值范围100μV～25mV的微小信号,电压增益为40dB。同时单元电路采用相关二次采样工作模式,采样信号可经后续差分电路除去固定模式噪声,提高传感器的精度。在标准CMOS工艺基础上,应用lift-off工艺对电极进行后续加工,提高其生物测量适应性。并通过封装技术的改进,使芯片适合在电解液环境下工作。在溶液中的模拟生物电学测试验证了芯片的功能。     

一种具有片上译码/放大功能的微阵列电路及其与生物纳米系统的集成

提出了一种用SMIC 0.18μm CMOS混合信号工艺实现的全集成CMOS微阵列生物芯片,并成功地实现了其与一种新的生物纳米系统的集成.该电路实现了19μm×19μm电极的4×4(16单元)阵列,反相电极.电流模式放大器,译码电路,以及逻辑控制电路的单片集成,并能够提供-1.6～1.6V的组装电压,8bit的电位分辨率及39.8dB的电流增益,电源电压为1.8V,而失调和噪声电流分别为5.9nA和25.3pArms.在实验中,利用该电路实现了对30nm聚乙烯醇包裹的磁性粒子的片上选择性组装,并对实验结果进行了讨论,从而验证了该电路的正确性和该集成方法的可行性.     

ZnO修饰多针-板结构负电晕放电气体传感器北大核心

基于负电晕放电原理的气体传感器利用局部高压电场将目标气体电离,根据电离特性对气体进行识别。采用MEMS技术制备硅尖阵列电极,利用电喷ZnO纳米颗粒对电极表面进行修饰,结合金平板正电极构建了多针-板结构电晕放电气体传感器。研究了电极间距对传感器负电晕放电特性的影响,综合考虑起晕电压、信号输出范围及稳定放电范围,优化电极间距为100μm。测试了在-0.70 kV放电电压下传感器对乙酸气体的敏感特性。该传感器对乙酸气体的响应灵敏度约为1.05 mV/10-6,理论检测限(三倍噪声)约为8.6×10-6,测试范围内传感器响应同乙酸气体体积分数近似呈线性关系。实验结果表明,ZnO纳米颗粒修饰减小了放电尖端曲率半径,增加了放电尖端个数,消除了硅尖阵列之间高度和顶端曲率半径的差异,从而有效降低了起晕电压,提高了传感器对乙酸气体响应灵敏度及电晕放电的稳定性。     

一种具有片上译码/放大功能的微阵列电路及其与生物纳米系统的集成

提出了一种用SMIC 0.18μm CMOS混合信号工艺实现的全集成CMOS微阵列生物芯片,并成功地实现了其与一种新的生物纳米系统的集成. 该电路实现了19μm×19μm电极的4×4 (16单元）阵列,反相电极,电流模式放大器,译码电路,以及逻辑控制电路的单片集成,并能够提供-1.6~1.6V的组装电压,8bit的电位分辨率及39.8dB的电流增益,电源电压为1.8V,而失调和噪声电流分别为5.9nA和25.3pArms. 在实验中,利用该电路实现了对30nm聚乙烯醇包裹的磁性粒子的片上选择性组装,并对实验结果进行了讨论,从而验证了该电路的正确性和该集成方法的可行性.     

基于Parylene的柔性微电极阵列微加工工艺研究

基底集成的柔性微电极阵列(MEAs)从一个全新的角度演绎了植入式神经系统,对神经进行电刺激并记录神经电信号.以一种新型聚合物材料聚对二甲苯(parylene)为基底,制备出了用于神经接口的柔性神经微电极阵列.采用MEMS加工技术,设计了一种基于parylene柔性神经微电极阵列的加工工艺方法,并讨论了在流片过程中的关键问题,如掩膜层的选择、电极的剥离及焊接与封装等.该柔性微电极阵列在用于视觉假体的神经接口方面具有独特的应用优势.     

Fabrication of a Silicon-Based Microprobe for Neural Interface Applications

采用表面MEMS工艺制作了二维多通道的硅基微电极阵列,用于提取脑神经电信号.在整个工艺制作过程中需要三步光刻,制作的硅针长1.2mm,宽100μm,厚30μm,同时各个记录点的间距为200μm,可以形成良好的信号隔离.对微电极的阻抗特性进行了体外测试,结果表明,随着频率由0变为10MHz,单个记录点阻抗由14MΩ下降到1.9kΩ.将微电极黏附到印刷线路板,通过金丝压焊提取各个通道信号,大大提高了植入的可操作性以及信号提取的可靠性.     

适用于神经接口的硅基微电极制作

采用表面MEMS工艺制作了二维多通道的硅基微电极阵列,用于提取脑神经电信号.在整个工艺制作过程中需要三步光刻,制作的硅针长1.2mm,宽100μm,厚30μm,同时各个记录点的间距为200μm,可以形成良好的信号隔离.对微电极的阻抗特性进行了体外测试,结果表明,随着频率由0变为10MHz,单个记录点阻抗由14MΩ下降到1.9kΩ.将微电极黏附到印刷线路板,通过金丝压焊提取各个通道信号,大大提高了植入的可操作性以及信号提取的可靠性.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.