基于Matlab GUI的模拟带通滤波器的设计

在传统的模拟带通滤波器设计过程中需要大量繁琐的数值计算,若手工计算则费时费力。在分析模拟带通滤波器设计理论和基于Matlab的图形用户界面（GUI）设计方法的基础上,利用Matlab GUI工具设计了具有通用性交互式切比雪夫模拟带通滤波器分析设计软件,并对软件中各控件回调函数的设计给出了详细的设计方法。用户只需要输入设计滤波器所需参数,然后选择相应的功能菜单,就可以得到滤波器的特性参数,并进行滤波器的性能分析。该设计解决了滤波器设计过程中大量繁琐的数值计算问题,为切比雪夫模拟带通滤波器的研究设计提供了有效的辅助工具。     

广义切比雪夫波导带阻滤波器设计

广义切比雪夫带阻滤波器含有相移的设计可以使带阻滤波器实现任意位置的反射零点。含有相移的网络在实现之前必须进行优化以减少杂散波的影响,据此从低通原型电路出发,设计制作并测试了一个结构新颖的含有相移的四阶线形带阻滤波器,其中心频率为9.780 GHz,阻带抑制为39 dB,通带中的回波损耗超过18.17 dB。最终的测试和仿真结果证明了这种设计的可行性。     

新型高抑制波导滤波器设计

提出了一种新颖的波导带通滤波器设计。该滤波器是一个四阶广义切比雪夫滤波器,中心频率为9.93GHz,带宽为200 MHz,插损小于0.5 dB,带内回波损耗大于20 dB。谐振器为CQ结构,通过一个矩形波导膜片(一个不完全高度的导电杆),实现了交叉耦合,相比传统方法,产生一个额外的传输零点。由于在高端产生了两个零点,使得滤波器在阻带高端10.1 GHz处的带外抑制达到了35 dB以上。仿真实验证明了该设计方法能显著提高滤波器的带外抑制,对滤波器的小型化、高性能化有一定的意义。     

微波窄带带通滤波器的设计

分析了微带线窄带滤波器设计的基本理论,借助AgilentADS仿真软件完成了中心频率位于L波段的窄带带通滤波器的设计。该滤波器选用切比雪夫的原型结构,并由耦合微带线构成,其通带为1．9GHz～2．1GHz,通带内衰减小于1．5dB,起伏小于0．5dB,在1．7GHz和2．3GHz衰减大于20dB,端口反射系数小于-15dB。版图仿真结果满足滤波器设计要求。     

MAX262滤波器在地下金属管线探测仪中的应用

基于可程控的开关电容有源滤波器MAX262,设计一种切比雪夫型多频点带通滤波器.通过对系统时钟分频和自定义时钟,实现对其在地下金属管线探测仪中所有工作频率的覆盖,并结合其四阶传输函数和编程辅助软件,给出了各个频点的滤波器编程参数.实测结果表明,该多频点带通滤波器能有效处理不同频率的信号,且滤波效果令人满意.     

对大功率滤波器的设计与分析

为了抑制微波发射机的杂波输出,需要在其后面连接一个大功率带通滤波器.文中介绍了可满足系统要求的微波梳状线带通滤波器的原理、结构和设计方法,分析了介质陶瓷电容片对滤波器脉冲功率容量的影响.采用切比雪夫低通原型设计了6级平行耦合带状线滤波器,用HFSS优化结构尺寸,制作了中心频率为1 085 MHz,相对带宽大于20%,插入损耗小于0.7 dB,宽阻带,脉冲功率容量大于800 W的带通滤波器,滤波器具有结构牢固,性能稳定,重量轻等特点.     

三阶级联复数有源RC带通滤波器

采用0.18μmCMOS工艺设计了一款应用在无线传网中的三阶级联有源RC复数带通滤波器,同时设计了自动频率调谐电路(AFT)。该滤波器采用的是切比雪夫逼近函数予以实现。在5比特数字控制码开关电容阵列的控制下,AFT电路即可完成对主体滤波器电路频率变化的校正。仿真结果显示,滤波器的中心频率稳定在2MHz,通带带宽为2MHz,镜像抑制比大于34dB,相邻信道阻带衰减大于34dB,通带纹波小于1dB,消耗电流为2.3mA,工作电源电压为1.8V。     

达哈布风光(埃及,西奈半岛)

为了抑制杂波,需要在通信系统中安装带阻滤波器.采用切比雪夫低通原型设计带阻滤波器,用介质同轴谐振器加载电容的结构实现串联谐振,用π型LC网络实现1/4波长传输线.采用高品质因数(Q)、高介微波介质材料制作了中心频率为933 MHz、阻带衰减大于40 dB的带阻滤波器,测试结果符合设计要求.滤波器具有体积小,性能稳定等特点.     

四分之一波长短截线超宽带滤波器的设计

本文简要介绍了短截线超宽带(UWB)滤波器的发展现状,简述了四分之一波长(λg0/4)短路短截线和开路短截线带通滤波器各短截线特性导纳的计算方法.利用matlab语言开发了综合短截线切比雪夫带通滤波器的程序,介绍了该程序的基本思路,提出了利用该程序与现有的微波CAD软件相结合设计切比雪夫超宽带滤波器的方案,该方案的主要特点是设计时间短精度高,从而大大提高了设计效率.最后利用实例加以说明,设计了一个中心频率为6.85GHz,相对带宽为110%的微带线超宽带滤波器.     

数字椭圆滤波器的Matlab设计与实现

介绍了数字椭圆型滤波器的基本理论和设计思想，给出了设计数字椭圆型滤波器的具体步骤，并通过一个带通滤波器为例来说明数字椭圆滤波器的Matlab具体实现过程，数字椭圆滤波器的设计非常简单、直观。最后对巴特沃斯、切比雪夫、椭圆函数3种滤波器的性能进行了比较。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.