双声路声表面波质量传感器的研究

在LiNbO3晶片上设计并实现了一种新型的双声路延迟线型声表面波质量传感器。利用光刻工艺在每个声传播路径上构造了一个方形质量沉积区,当有物质沉积到该区时,由于质量沉积效应,声表面波的波速发生变化,使以延迟线作为反馈回路的振荡器的振荡频率发生变化,并通过这一变化反映出沉积物的质量。为了补偿温度对器件传输频谱的影响,该器件采用双声路结构,一路为传感声路,一路为参考声路。介绍了器件的设计、工艺流程和测试方法,最后对测试结果进行了分析和讨论。测试结果表明该传感器的温度系数为7Hz/°C,灵敏度为4.9×10-6cm2/g。     

Y型双声路声表面波质量传感器及其测量系统

报道了一种在128°Y切割X传播方向的LiNbO3基片上设计并研制新型的延迟线型声表面波质量传感器及测量系统。由于环境温度对声表面波质量传感器性能影响较大,因此采用新型的Y型双声路结构克服环境温度对传感器性能的影响。阐述了Y型双声路质量传感器器件的结构及设计、测试电路的原理,对实验结果作了分析讨论。测试结果表明:器件相对温度系数仅为11Hz/°C左右,器件的质量沉积效应灵敏度为3.62GHz·cm2/g,并且具有良好的线性度。     

井下FBG高压传感器特性的实验研究

在光纤Bragg光栅(FBG)作为敏感器件设计压力传感器时,需要提高FBG的压力灵敏度.实验中,设计了基于应变圆筒的压力变换装置,并对圆筒的轴向应变进行放大.利用高压测试系统对传感器的压力特性进行实验研究,结果表明:该FBG压力传感器的波长灵敏度为27.1 pm/MPa,约为裸光栅的9倍,线性度为0.999.     

一种新型的基于滑膜阻尼的电容式双向MEMS惯性传感器

设计了一个新型的结构完全对称的双向MEMS电容式惯性传感器.该传感器主要由可动质量块、栅形条、支撑梁、连接梁、阻尼调整梳齿组成.设计的结构采用变电容面积的检测方式,在降低空气阻尼的同时也降低了对DRIE工艺的要求,并通过加大测试信号电压来降低电路噪声,从而提高传感器的分辨率.用有限元工具ANSYS详细讨论了传感器的参数和性能,并模拟验证了设计的双向传感器的交叉效应近似为零.制作了滑膜阻尼测试器件,在大气压下,测得的品质因子可达514,验证了该结构设计可以提高传感器的分辨率和该工艺设计的可行性.     

一种新型的基于滑膜阻尼的电容式双向MEMS惯性传感器

设计了一个新型的结构完全对称的双向MEMS电容式惯性传感器.该传感器主要由可动质量块、栅形条、支撑梁、连接梁、阻尼调整梳齿组成.设计的结构采用变电容面积的检测方式,在降低空气阻尼的同时也降低了对DRIE工艺的要求,并通过加大测试信号电压来降低电路噪声,从而提高传感器的分辨率.用有限元工具ANSYS详细讨论了传感器的参数和性能,并模拟验证了设计的双向传感器的交叉效应近似为零.制作了滑膜阻尼测试器件,在大气压下,测得的品质因子可达514,验证了该结构设计可以提高传感器的分辨率和该工艺设计的可行性.     

压力敏感器件智能测试系统的设计

设计了一套压力敏感器件智能测试系统，通过自动控制高低温试验箱、压力控制器、高精度数字万用表、绝缘电阻测试仪、漏电流测试仪等仪表，实现对压力敏感器件的温度冲击老练、温度补偿、静态特性、稳定性等多项参数的自动测试；同时，该系统能够实现对压力敏感器件测试数据的自动整理、分析、处理，形成测试报告，给出传感器质量分析报告，最终达到对压力敏感器件的自动测试。将该系统应用于压力敏感器件的测试中，可以提高传感器的测试效率和产品质量，降低生产成本。     

三维纳米线SAW气体传感器及报警器设计

该文提出了一种全新的三维纳米线结构的声表面波(SAW)气体传感器,详细阐述了谐振型SAW器件上纳米线制备与修饰改性设计,传感器信号提取电路设计及报警器设计等过程,最后研制出气体报警器样品。并利用沙林（GB）模拟剂对传感器性能指标进行了测试,该传感器的响应阈值低达2 mg/m3,响应时间仅约为20 s。结果表明,与传统二维结构的SAW气体传感器相比,三维纳米线结构的SAW气体传感器在响应阈值和响应时间上均有很大的提高。     

位移检测传感器系统的设计与分析

依据三角测量原理,设计了一款采用位敏探测器(PSD)作为敏感元件,半导体激光器作为发光器件的位移检测传感器系统。由于PSD输出的是微弱光电流信号,电路的设计以及发光元件的选择极大地关系到该系统的性能。分析了采用不同电路元件参数的组合对该传感器系统在抗干扰能力,测量精度方面的影响,以及采用不同发光器件时传感器系统的性能差异,并由以上分析结果设计出一款位移检测传感器系统,最后通过实验测试了该传感器系统的性能。     

液相检测的Love波传感器的制作与研究

在分析Love波传感器液相质量检测机理的基础上,设计并制作了以36°YXLiTaO3为基底,交联处理的聚甲基丙烯酸甲酯(PMMA)为波导层的Love波器件。器件的中心频率为118 MHz,插损为-16 dB。通过建立电镀实验模型,实时的检测了在液相中吸附于阴极薄膜上铜的质量,并测试到传感器的灵敏度为-0.387 cm2/g。分析了灵敏度实验值与理论值的差别,进一步提出了改进方案与措施。     

一种IGBT热阻测试系统的研制

为了解决国内绝缘栅双极型晶体管(IGBT)生产和使用中热阻测试问题,采用电学法的测量原理并与嵌入式技术相结合的方式,设计了一种以现场可编程门阵列(FPGA)为控制核心的IGBT自动测试系统.该系统采用模块化的设计思想,各模块间进行隔离设计,其中14 bit隔离型高速数据采集卡可以快速采集IGBT温度敏感参数的变化,从而使系统可以快速可靠的工作.使用该测试系统对IGBT器件的热特性进行测试,将测试数据与美国生产的Phase1 1热特性分析仪进行对比,测试结果经过修正后误差约为1％.验证了该热阻测试系统可用于测试IGBT器件的热特性,并具有速度快、稳定性好等优点,对我国功率器件的可靠性技术研究具有重要意义.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.