机械可调谐的长周期光纤光栅的写制实验研究

深入研究了采用机械微弯法写制长周期光纤光栅(LPFG)的方案,进一步分析此方案中各种因素对LPFG特性的影响。写制的周期性凹槽板谐振波长变化率为17.7 nm/0.01 mm。当仅增加压力时,损耗峰值先增加,最大可调谐到16.248 dB。当压力过大时,损耗峰值减小。同时附加损耗随着压力增大而增加。而当压力一定时,损耗峰值随着周期性凹槽板的周期数目的增加而减小。研究结果有利于LPFG灵活运用于EDFA增益平坦和滤波应用等方面。     

机械写制长周期光纤光栅理论与实验研究

运用耦合模理论分析长周期光纤光栅(LPFG)的特性,得出了各物理参数与光栅谱形之间的关系,并利用MATLAB进行了仿真.基于机械线加工技术制作了周期为600、620和660 μm,周期数为60、80和90的周期性矩形压力槽,利用机械微弯原理写制的光栅的最大谐振峰值可达18 dB,谐振波长可调谐,透射谱与理论分析吻合.     

一种新的灵敏度可调谐FBG解凋技术

实验研究了一种基于机械微应变引入长周期光纤光栅(LPFG)的灵敏度可调谐的光纤布拉格光栅(FBG)应变传感系统.利用机械线加工技术设计了周期性压力槽,通过螺旋微位移结构定量推进弹簧进而对光纤施加径向压力,写制出谐振峰值可调谐的LPFG.紫外激光写入技术制作的FBG的波长位于LPFG的谐振边带范围内时,利用该LPFG作为透射滤波器实现了一种新的灵敏度可调谐FBG应变传感系统.实验分析了施加在LPFG上的压力由20 N调节至60 N时对FBG施加O～3000με的灵敏度可调谐传感实验结果,FBG传感系统光功率变化率由0.802 nW/με增加到1.204 nW/με.     

机械微弯长周期光纤光栅的制备及其光学特性研究

利用两个交替放置的周期性刻槽板对单模光纤（SMF）施力,形成了机械微弯长周期光纤光栅（LPFG）。实验研究了LPFG的偏振相关损耗（PDL）、刻槽板空间周期和压力等参数对透射谱的影响。结果表明,压力可改变LPFG的透射谱特性,最大损耗峰值可达24．6dB;在1551．9nm处,LP13包层模的最大PDL约为7．42dB...     

新型长周期光纤光栅的扭曲特性研究

发现高频CO2激光脉冲写入的长周期光纤光栅（LPFG）具有独特的扭曲特性：1）扭曲特性具有明硅的扭曲方向相关性——顺时针扭曲时谐振波长发生“红”移，逆时针扭曲时谐振波长发生“蓝”移，无论顺时针还是逆时针扭曲损耗峰幅值都近似线性减小；2）若被扭曲的光纤比被扭曲的长周期光纤光栅长得多，则扭曲时长周期光纤光栅谐振波长和幅值的变化出现周期性的起伏。利用扭曲光栅引起椭圆双折射进而导致偏振态变化的相关理论合理解释了这些独特的扭曲特性。     

基于压力槽可调谐长周期光纤光栅模块的设计

提出一种基于机械微弯变形法的能够同时生成不同谐振波长的多个长周期光纤光栅的制作方案.仿真分析了该方案中各参数(如光栅有效长度、倾斜角度以及外界应力)变化对长周期光纤光栅损耗峰深度和谐振波长的影响.结果显示,长周期光纤光栅的损耗峰深度主要受光栅有效长度和压力影响,而倾斜角度大幅度改变谐振波长位置.     

包层腐蚀机械写制长周期光纤光栅的耦合特性研究

利用周期为600μm的刻槽板,采用单面受压的方式包层对经过HF溶液腐蚀后的单模光纤施加压力,形成机械写制长周期光纤光栅(LPFG).通过测最具有不同包层直径的机械写制LPFG在各种压力下的透射光谱,研究包层直径对纤芯基模与包层模LP12、LP13间耦合特性的影响.实验结果表明,随着包层直径的减小,谐振波长发生红移,耦合...     

机械写制π相移弯曲不灵敏光纤长周期光栅滤波器

采用2个交错放置的具有π相移的周期性刻槽板对弯曲不敏感光纤径向施力,形成了机械写制π相移长周期光栅(LPGs)滤波器。实验研究了压力和子光栅个数对π相移光纤光栅的光谱影响以及光栅的偏振相关损耗(PDL)。结果表明：两侧阻带的传输损耗由施加在光纤上面的压力决定,子光栅的个数决定π相移光纤光栅的通带宽度,但不影响通带中心波长;对LP13耦合模,当π相移个数从1增加到9时,滤波器通带带宽由8.2 nm增加到53.8 nm。LP13包层模具有最大PDL,其值约为6.86 dB。该方法制作的π相移长周期光纤光栅(LPFG)具有可重构性,结构简单,易于操作,在光纤通信和传感领域具有潜在的应用价值。     

基于周期压力写入的长周期光纤光栅的一阶光学微分器

根据一阶光学微分器的传递函数,理论分析了均匀 长周期光纤光栅(LPFG)作为一阶瞬态光学微分器应满足的条件。周期压力产生的LPFG能够通 过压力的控制加强光栅的模式耦合,因而得到大的光栅谐 振损耗,实验证明了周期压力在细径光纤上产生的LPFG能够产生大于50dB的谐振损耗。数值模拟结果表明,此光栅光 学微分器能够高精度地完成对高斯脉冲的微分运算,在超快全光信号处理、飞秒脉冲整形和 任意光脉冲产生等领域中有宽广的应用前景。     

基于镀铜长周期FBG的波长可调谐环形光纤激光器

将采用化学镀铜膜技术封装的长周期光纤光栅（LPFG）串人环形腔中,设计了一种新颖的波长可调谐掺Er3＋光纤激光器（EDFL）。铜镀膜（化学涂镀）的LPFG在激光器环腔中用作带阻滤波器,利用恒电流源调节LPFG所处温度场,影响LPFG透射谱,改变激光器环形腔增益最高点,实现输出激光波长的可调谐。在LPFG环境温度调谐20...     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.