大行程无寄生位移柔性压电微夹钳结构设计

该文设计了一种两级放大的新型柔性微夹钳结构,对其位移放大比等特性进行了研究。首先,设计了微夹钳的整体结构,第一级放大机构采用杠杆机构,第二级采用半桥式放大机构。随后,利用刚度矩阵法对微夹钳柔性机构进行建模分析,并建立了平面三自由度的振动微分方程,根据所得方程计算出了微夹钳的位移放大比等特性。最后分别利用有限元和实验方法对模型分析得到的位移放大比进行了验证。结果表明,模型分析、有限元分析及实验的结果较吻合,证明了此微夹钳柔性机构以及建模方法的可行性和有效性。     

波纹梁夹持型双平行四边形柔性机构性能分析

为解决传统双平行四边形柔性机构中二级运动平台欠约束问题,设计了一种波纹梁夹持型对称双平行四边形柔性机构。首先,提出了一种基于正弦曲线的波纹梁结构,并将其安装在对称双平行四边形机构的2个二级平台之间;其次,建立了机构静力学解析模型,并利用拉格朗日方程建立了动力学模型;最后,利用有限元和实验方法对其静、动力学性能进行了仿真和测试。结果表明:该机构在没有改变机构运动刚度和一阶固有频率的情况下,对二级平台进行了有效约束,从而提升了双平行四边形机构的高阶固有频率,能够有效改善传统双平行四边形机构的动力学特性和抑制振动能力。     

基于三角位移放大机构的压电制动器研究

提出了一种应用于压电制动器的微位移放大机构,该机构以叠层压电陶瓷为驱动元件,通过基于三角形放大原理的柔性铰链放大机构,放大叠层压电陶瓷的输出位移。分析了放大机构的运动及放大机理,建立了制动系统的力学模型,并利用ANSYS软件建立机构有限元模型进行仿真,在试制样机上对其输出特性进行了实验。实验测试结果表明,该机构对叠层压电陶瓷输出位移的放大倍数为3.2倍,与有限元仿真得到的放大倍数4倍相近,一阶固有频率为1 814Hz,最大输出力为44.1N(150V电压下),且该机构线性良好、分辨率高、迟滞效应较小。     

伺服阀用液压放大式GMA的设计及建模

针对超磁致伸缩致动器输出位移有限,无法直接驱动伺服阀阀芯运动的问题,设计了一种基于柔性活塞的新型液压式微位移放大机构:由超磁致伸缩(GMM)棒驱动大活塞变形,并通过密闭容腔内的油液在小活塞端将GMM棒的输出位移放大。建立了超磁致伸缩致动器及其液压式微位移放大机构的耦合模型,采用弹性小挠度理论,有限元法和液压弹簧刚度理论对放大机构进行了分析和优化,并制作了样机。仿真和实验表明,所设计的液压式微位移放大机构可将GMM棒位移放大3.2倍,所建立的耦合模型较准确,误差在10%以内。     

人工全膝关节置换术后早期感染的治疗

设计一种以压电陶瓷为驱动,通过柔性机构放大输出位移的精密定位工作台.给出了该精密定位工作台的结构模型,建立了精密定位工作台的位置输入输出方程,分析和计算了柔性铰链微位移放大机构的位移放大倍数.通过仿真确定工作台各自由度的变形量与压电陶瓷驱动器伸缩量之间的关系与运动特性.结果表明,该精密定位工作台能实现定位误差为0.1 μm的高精度定位.通过与3点支撑微位移放大机构工作台的比较,显示出4点支撑微位移放大机构工作台可减小交叉耦合的影响.     

负载刚度对电热微执行器输出性能的影响分析

针对微机电系统中电热微执行器和位移放大机构都具有柔性的事实,从理论上分析了作为负载系统的柔性位移放大机构对微执行器输出位移的影响,并用有限元方法对二者的工作性能进行了仿真.结果表明,电热微执行器外接负载的刚度和执行器本身刚度的比值是影响整个组合器件性能的重要因素.最后用深层反应离子刻蚀技术(DRIE)在硅隔离衬底(SOI)上加工了电热微执行器和柔性位移放大机构,并对其进行了测试,测试结果与有限元分析结果符合得很好.     

基于集中参数模型的后缘小翼驱动机构分析

菱形压电驱动器是主动控制襟翼（ACF）系统实现直升机减振、降噪的关键。该文基于菱形放大机构的集中参数模型,发展了可用于负载性能计算的电路等效模型和简化模型。建立了分布式和集中式两种柔性放大机构的参数模型,并通过ABAQUS有限元进行了模型的有效性验证。对比分析了3种典型构型菱形框和压电堆的弹性变形对作动器输出位移和力的影响,揭示了其性能差异的原因。弹簧负载性能分析表明,当负载等效弹簧刚度等于作动器刚度时,作动器输出能量达到最大。     

负载刚度对电热微执行器输出性能的影响分析

针对微机电系统中电热微执行器和位移放大机构都具有柔性的事实,从理论上分析了作为负载系统的柔性位移放大机构对微执行器输出位移的影响,并用有限元方法对二者的工作性能进行了仿真.结果表明,电热微执行器外接负载的刚度和执行器本身刚度的比值是影响整个组合器件性能的重要因素.最后用深层反应离子刻蚀技术(DRIE)在硅隔离衬底(SOI)上加工了电热微执行器和柔性位移放大机构,并对其进行了测试,测试结果与有限元分析结果符合得很好.     

柔性铰链位移放大机构在活塞加工中的应用

针对活塞加工中快速刀具伺服机构高频响、大位移和高精度的特点，提出了一种基于压电陶瓷的新型单自由度柔性铰链微位移放大机构，对单轴柔性铰链和机构进行了刚度计算；为了提高控制精度，利用Maxwell模型对压电陶瓷非线性建立数学模型，利用反馈-前馈控制法消除了以切削力为主的干扰信号的影响，仿真实验证明该系统达到了活塞加工中高速进给的要求。     

杠杆放大式双足压电直线电机的建模及优化设计

杠杆放大机构设计对于杠杆放大式双足压电直线电机的性能起决定性作用。该文分析了杠杆放大式双足压电电机的作动机理,建立了基于柔性铰链的杠杆放大机构的动力学模型,对机构放大率进行了理论计算,纵向、横向理论放大率分别为3.12和1.98。利用有限元软件进行仿真分析,理论计算与有限元仿真误差分别为3.1%、14.6%。在此基础上,利用遗传算法对杠杆放大机构柔性铰链结构参数进行优化设计,优化后驱动足纵向、横向位移分别提高了17.6%、8.1%。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.