低碳冲压钢板静态再结晶行为的研究

利用背散射电子衍射(EBSD)技术和X射线衍射(XRD)对SPCD冷轧钢板缓慢升温退火工艺下的再结晶取向特征、织构的形成规律及与形变织构的关系进行研究,并与快速加热退火工艺下的IF钢再结晶取向特点进行对比。结果表明:宏观织构显示冷轧态下{111}〈112〉形变织构稳定存在,随后的再结晶过程中γ线上存在{111}〈112〉与{111}〈110〉织构的竞争,其中再结晶初期{111}〈112〉织构占主导,后期{111}〈110〉吞食{112}〈110〉和{001}〈110〉织构进而取代{111}〈112〉作为γ线织构的主导取向;不同取向新晶粒具有不同的再结晶形核地点:{111}〈110〉新晶粒主要在{112}〈110〉和{111}〈112〉形变晶粒的晶界处形核;{111}〈112〉新晶粒主要在相同取向的形变晶粒内形核;而{110}〈001〉新晶粒主要在{111}〈112〉形变晶粒的形变带内形核。     

冷轧无取向硅钢再结晶退火过程的EBSD分析

采用EBSD手段分析了低碳低硅（0.003%C、0.3%Si）冷轧硅钢试样在740℃加热保温6s～360s退火过程中微区取向的演变规律。结果表明：{111}〈110〉取向的再结晶晶粒在变形的{111}〈112〉取向晶粒的晶界处形核,同时{111}〈112〉取向的再结晶晶粒在变形的{111}〈110〉取向晶粒的晶界处形核,并在{111}〈112〉取向冷轧剪切带上形成{011}〈100〉取向再结晶晶粒。在一定的退火温度下,合理控制保温时间有利于提高{100}面织构的占有率。     

低碳冲压钢板静态再结晶行为的研究

利用背散射电子衍射(EBSD)技术和X射线衍射(XRD)对SPCD冷轧钢板缓慢升温退火工艺下的再结晶取向特征、织构的形成规律及与形变织构的关系进行研究,并与快速加热退火工艺下的IF钢再结晶取向特点进行对比.结果表明:宏观织构显示冷轧态下{111}〈112〉形变织构稳定存在,随后的再结晶过程中γ线上存在{111}〈112...     

稀土CSP低碳钢薄板退火过程中组织演变及微区取向研究

利用金相显微镜和背散射电子衍射（EBSD）技术研究了稀土对CSP低碳钢冷轧薄板退火过程中组织和织构的影响。试验结果表明：稀土CSP低碳钢冷轧板在罩式退火过程中加热到580℃时开始发生再结晶,经过680℃保温9 h,形成均匀的饼型晶粒;稀土的加入促进{111}〈110〉和{111}〈112〉晶粒的生长,增加了{111}有利织构的强度。     

超高纯Al-0.5%Cu合金溅射靶材微观组织与织构的EBSD分析

用EBSD技术对超高纯（99.9995%以上）Al-0.5%Cu合金靶材冷轧及退火过程中的微观组织、织构及取向差进行了表征,分析了合金靶材多向冷轧、退火过程中微观组织、织构及取向差等的演变规律。     

冷轧铝板微织构演变的原位加热电子背散射衍射分析

采用原位加热电子背散射衍射(EBSD)技术,对冷轧铝板在回复和再结晶转变过程中的微织构演变规律进行了动态研究。轧制态铝板以铜型织构{112}〈111〉为主。再结晶转变后,以立方织构{001}〈100〉和R织构{124}〈211〉为主。在回复和再结晶过程中,{001}〈100〉晶粒和{124}〈211〉晶粒优先在形变带边缘形成和长大。晶粒长大通过晶界迁移并吞噬周围晶粒而得以发展。本研究对于理解轧制铝板的再结晶过程和机制,并有效控制轧制铝板的织构具有重要的参考价值。     

挤压态Mg-Gd-Zr合金在退火过程中的晶粒长大和织构演变

研究了Mg-Gd-Zr挤压态合金在450℃和500℃退火过程中的晶粒生长和织构演变。结果表明:Mg-Gd-Zr挤压态合金在退火过程中晶粒正常长大,在500℃退火比在450℃退火时晶粒长大的速度快得多。Mg-Gd-Zr合金挤压后形成了〈0001〉//ED、〈1010〉//ED和〈1120〉//ED三种织构。Mg-Gd-Zr挤压合金在450℃退火,退火时间从20~60 min,〈0001〉//ED织构的强度逐渐增加。Mg-Gd-Zr合金在500℃退火时,〈0001〉//ED织构的强度在退火20 min即达到最大值,在随后的退火过程中逐渐减弱,〈1120〉//ED织构在退火过程中得到了很大程度的增强。     

高硅钢温轧过程压下率及中间退火对组织、织构的影响

传统轧制法制备6．5wt．％高硅钢过程中温轧工艺具有显著不同于3wt．％Si的电工钢的特点及组织织构特征,是开发新型基于织构优化的高硅钢的关键环节。采用EBSD技术对通过热轧、温轧、冷轧及退火工艺制备0．3mm厚的6．5wt．％Si电工钢板的组织和织构进行分析,重点研究温轧过程中的中间退火和大、小压下率组合以控制织构。结果表明,在热轧退火板是部分再结晶组织的情况下,一次性温轧或先小形变量、中间退火后再大形变量的工艺可得到更多的Goss晶粒;经过最终退火后Goss取向会发生偏转,形成部分黄铜取向,而{111}（112）取向的晶粒内形核生成近Goss取向的再结晶晶粒;大压下量轧制是最终组织中{111}取向晶粒较多的主要原因。     

Ti-25 Nb-25 Ta合金拉伸变形过程中｛332｝〈113〉变形孪晶的EBSD研究

本文利用EBSD技术对亚稳β型Ti?25Nb?25Ta合金室温拉伸变形过程中｛332｝〈113〉变形孪晶的演变趋势及交叉现象进行了研究。结果表明：随着变形量的增大，孪晶宽度不断增加，孪晶形态由变形初期的平直细条带状逐渐变为宽窄不一的条带状，至变形末期部分孪晶呈破碎状，孪晶界严重扭曲变形。多数晶粒内产生两种以上｛332｝〈113〉孪晶变体，部分孪晶能穿越晶界继续生长，某些初次孪晶内部有二次｛332｝〈113〉孪晶产生。不同变体孪晶间易发生交叉现象。不同｛332｝〈113〉孪晶变体的交叉作用导致交叉区域出现较大的局部晶格畸变，晶格畸变主要集中于孪晶内部，且交叉界面处的晶格畸变程度最为严重。交叉作用的结果是交叉区域的晶体相对于不同孪晶变体和基体的取向都发生一定程度的改变。     

7B04铝合金板沿厚度方向显微组织、织构及力学性能的研究

本文通过扫描电镜(SEM)及常规力学性能试验对7B04铝合金板沿厚度方向的显微组织、织构及力学性能进行了详细的研究,结果显示:样品芯部及表层晶粒都沿轧制方向拉长,芯部基本未发生再结晶,小角度晶界的含量随着离芯部距离的增加而减少,再结晶程度逐渐加强;未回溶相S(Al2CuMg)、Al7Cu2Fe、Al18Cr2Mg3在芯部及表层尺寸无明显差别;芯部织构主要为铜织构copper{112}〈111〉、黄铜织构Brass{110}〈112〉(B)、S织构{123}〈634〉、{241}〈112〉,{113}〈332〉及{231}〈124〉,表层织构出现旋转立方织构r-cube{100}〈011〉及{111}〈110〉织构,且随芯部到表层织构在基体中的整体体积含量减少。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.