基于DTMB标准多载波模式的定时同步算法研究

提出一种基于地面数字电视国家标准(DTMB)的定时同步算法。该算法结合帧头模式检测、帧头位置粗估计和帧头相位捕获完成定时同步。其中帧头模式检测和帧头位置粗估计不受多径、大频偏影响,可抗大采样偏差。同时估计的帧头位置可减小相关运算量,从而迅速捕获到帧头相位进入定时恢复环路。理论分析和仿真结果证明该算法具有更好的性能。     

一种大频偏和低信噪比条件下的全数字锁相环设计

全数字锁相环设计是相干解调全数字接收机载波同步和位同步的关键技术,而大频偏和低信噪比分别从两个方面增加了环路设计的难度.该文在此背景下,以捕获时间和跟踪性能为指标,从模拟环路分析出发,给出一种适用于大频偏和低信噪比条件的全数字锁相环设计.     

一种基于星间光链路的帧同步与频偏估计方法

为了解决星间激光通信不同步导致的信息质量差与解调难度大等问题,针对滑动互相关算法帧同步易受载波频偏影响的不足,采用计算仿真的方法分析了星间多普勒效应引起的载波频偏程度,提出差分相关算法以实现帧同步与载波频偏估计,并给出硬件实现方案,分析了差分相关算法的帧同步与载波频偏估计性能。结果表明,差分相关算法能够实现大载波频偏影响下的帧同步,且具有较强的频偏估计性能,采用差分相关算法后系统的误码性能提升近3dB。此结果说明,差分相关算法是解决星间激光链路同步问题的有效方法。     

基于QAM载波恢复算法的研究

针对高阶QAM调制解调系统对载波偏移的敏感性问题,采用一种基于导频、扫频环路和载波恢复环路的高阶QAM载波恢复方法。这里设计的扫频环路是由帧检测、扫频、频率校正三个模块组成,载波恢复环路由极性判决算法模块和判决导向模块组成。扫频和极性判决算法都具有较大的频偏捕获能力。两者联合用于载波频偏的捕获阶段,既克服了一般扫频算法残留频偏大的困难,也解决了极性算法可用角点少的问题。     

一种面向短时突发信号的高精度同步方案设计

针对短时突发通信存在捕获时间长、算法复杂度高、资源开销大等问题,文中设计了一种高精度同步方案。该方案自定义收发双方帧结构,采用独特码差分匹配算法实现信号检测和帧同步,并采用基于导频累积量的前向估计算法实现频偏估计和校正。为兼顾频偏估计精度和算法复杂度,对独特码采用滑动相关算法实现初始相位捕获,使系统结构紧凑,更加适合FPGA硬件实现。理论分析和软件仿真表明,该方案在低信噪比和高动态范围条件下具有较好的接收性能,频率估计精度能够达到符号速率的万分之一。文中同时进行了硬件协同仿真与验证,并给出了相应的仿真波形。     

DSSS数字接收机的AFC算法及其实现

介绍了一种零中频直接序列扩频(DSSS)数字接收机的自动频率控制(AFC)算法及其仿真和实现.该算法从残留载波跟踪解调环的鉴相信号中提取频偏信息,对下变频本振进行AFC,并且可根据对频偏的估计切换环路特性,使环路既有较大的捕获带宽,又具有较好的跟踪和滤波性能.该算法适用于无导频的直扩BPSK信号接收机,其特点是算法复杂度低,特别易于FPGA实现.     

无人机载软件接收机同步方案研究

为确保无人飞机进行稳定的数据传输,该文提出了一种基于部分匹配滤波器和两级FFT的快速同步捕获算法,该算法能在搜索出同步点位置的同时,有效估计载波频偏,且计算复杂度显著下降。在动态环境中,载波多普勒频移变化剧烈,普通接收机跟踪环容易失锁,该文提出了一种基于经验值查表的载波跟踪算法,在锁频环内引入经验值查找表,环路能自适应调整滤波器带宽,任意时刻都能保证高精度跟踪。仿真实验表明,当输入信噪比高于-35 dB,载波初始多普勒频偏在12.8 kHz以内,机动载体相对于卫星转发器的径向加速度为5 m/s2(等效多普勒频移变化速度为180 Hz/s),无人机载软件接收机可以进行稳定的数据传输。     

IEEE802．16e帧起始同步MATLAB仿真及DSP实现

由于IEEE802．16e系统采用OFDM技术,时间延迟和频率偏移会导致信号不能正常解调,接收机必须进行精确的帧起始同步。给出了IEEE802．16e系统帧起始位置确定步骤、自相关粗同步算法和互相关细同步算法,然后用MATLAB验证了自相关和互相关算法的正确性,最后用DSP对帧起始同步进行了实现。     

GMSK多通道接收机的非相干解调算法及FPGA实现

针对硬件资源受限的高斯最小频移键控(Gaussian Filtered Minimum Shift Keying, GMSK)信号多通道接收机，设计了一种硬件资源占用极少、译码性能良好的解调算法。对通用数字环路硬件资源进行优化，提出了一种改进算法，将环路捕获速度提升了5倍，引入一种位同步算法，该算法同步精度高、占用硬件资源少、采样率低、易于工程实现。并对2-bit差分解调算法进行改进，完成差分解调模块设计。测试结果表明，改进后的差分解调算法比改进前译码性能提升了约2 dB。该解调算法与理论值相比仅有0.6 dB的解调损耗，具有良好的解调性能，满足工程实际应用需求。     

FFT频偏估计辅助环路捕获

载波同步模块是数字接收机最为关键的组成部分之一,本文对实现载波同步的方法进行改进,在分析了FFT频偏估计的基础上,将FFT频偏估计与极性Costas环结合,使FFT频偏估计辅助极性Costas环捕获以提升环路性能.对FFT频偏估计进行了MATLAB仿真和FPGA实现,并对改进后的极性Costas环路进行了FPGA实现.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.