数字阵列天气雷达低副瓣天线设计

为天气雷达设计一维相扫相控阵天线,方位面副瓣低于-30 d B,波束宽度小于1°,俯仰面接收副瓣低于-40 d B。方位面波束采用窄边波导裂缝阵列天线实现,采用全数字T/R组件精确控制幅度和相位,实现低于-40 d B的俯仰面接收副瓣。测试结果表明,副瓣电平与波束宽度指标与理论值吻合较好,满足指标要求。     

星载精确测向天线阵的研制

此卫星载雷达侦察测向天线是宽带精密测向系统，采用长基线干涉仪精测向天线阵，加上由六个天线构成的多波束天线阵作比幅测向、并彩用六信道最佳估值比幅解干涉仪多值模糊，实现方位面测向；在俯仰面由由一个二元阵和一个波束形成网络切出一条带子的方法实现俯仰面测向。所有天线单元均用加脊喇叭。计算的总的平均圆概率误差为１１．３ｋｍ。     

数字相控阵下多波束的ESM 系统信号处理方法

伴随着宽带雷达系统的发展,信号带宽越来越大,从而对于电子支援侦察ESM 系统的要求也越来越高。现代ESM系统需要瞬时带宽大且瞬时方位覆盖范围大。为满足ESM 系统新需求,天线阵面由原有模拟阵面逐渐转变为数字阵面。文中首先介绍了数字相控阵多波束体制下ESM 系统的特点;之后,提出了针对多波束ESM 系统的信号处理系统设计方法;分析了系统设计中的关键技术以及系统性能提高的方法;最后,介绍了工程实现和实测效果。     

一种DBF体制卫星接收共形相控阵天线

提出了一种全数字波束合成(digital beam forming, DBF)体制卫星接收共形相控阵天线设计思路.该天线采用半球形共形阵排布方式, 阵元采用双层微带贴片天线实现宽带圆极化.在半球形的布局下, 通过判断卫星信号来波方向在球面上的投影来选择工作的阵元, 形成与来波方向一致的波束, 在全空域(—75°~75°)的仰角内可实现增益起伏小于1.5 dB的波束覆盖; 后端采用射频数字一体化设计技术, 可同时形成多个波束, 实现了一个天线跟踪多颗卫星的能力.最后加工和测试了天线样机, 验证了共形半球阵的波束形成能力.提出的天线设计思路有助于拓展数字波束体制在卫星通信中的应用, 对全空域多波束相控阵天线的研制具有指导意义.     

Ka频段双圆极化相控阵天线设计

设计了一个8×8的Ka频段双圆极化相控阵天线。该天线单元采用正交缝隙耦合馈电的多层贴片微带天线,并由一个小型化宽带3 d B枝节电桥实现双圆极化。为提高天线圆极化性能,依次旋转天线单元,形成2×2双圆极化天线子阵。以天线子阵为基础,扩展成8×8相控阵天线。HFSS仿真结果表明,天线在方位360°俯仰±60°范围内进行双圆极化扫描,轴比小于3 d B,且轴比带宽达30%。该研究结果可应用于卫星通信的双圆极化相控阵天线的设计。     

海面反射对一维相控阵天线影响的研究

海面反射引起的多径干涉效应,会造成宽波束雷达天线的俯仰波束分裂,导致雷达观测的盲区和目标跟踪丢失.文中从天线和电波传播的观点出发,分析了海面上单脉冲二次雷达询问天线的三维方向图特性,阐述了天线波束干涉的原理.详细分析海基一维相控阵雷达天线在姿态倾斜后的方位面和俯仰面干涉方向图,讨论了由于方向图变化引起的系统测角偏差,总结了降低多径影响的方法.     

基于子阵时延的数字阵列宽带波束形成

数字阵列雷迭是雷达发展的重要方向之一。在宽带信号下,由于孔径效应影响,传统的波束形成方法会导致天线波束指向不准和主辩展宽,为此需要使用时延补偿单元取代传统窄带相控阵中的移相单元。文中以均匀线阵为模型,分析了瞬时带宽理论,并引入了分数时延滤波器的时延方法,实现数字阵列收发传输时延的精确补偿。仿真结果表明：在线阵中,对每个子阵采用分数时延滤波器进行数字波束形成,有效地解决了宽带信号波束图指向偏移,主瓣展宽的问题。     

可变波束倾角的相移表面阵列研究

介绍了一种可变波束倾角的相移表面(PSS)阵列。该相移表面阵列工作在Ku频段。馈源天线波束通过两层PSS的同向运动和相对运动,实现了方位360°、俯仰0°~78°波束连续扫描。制作了PSS阵列实物,并进行了测试,测试结果与设计吻合。可变波束倾角的相移表面阵列天线具有超低剖面,是一种新型机械式相控阵天线。     

倾斜放置二维数字阵列雷达天线参数优化

介绍了二维相控阵或二维数字阵列天线锥形扫描与俯仰、方位扫描时的坐标变换,重点阐述了倾斜放置二维相控阵或二维数字阵列天线按俯仰、方位扫描时的坐标变换关系,基于该坐标变换,得出倾斜放置二维平面相控阵或二维平面数字阵列天线扫描区域边界在变换域上呈椭圆形的结论。基于这样的结论,可以实现对阵面倾斜角度、几何参数的优化。     

一种验证数字多波束形成的方向图测试法

针对工程实践中数字多波束形成方法的正确性不易验证,提出了一种基于方向图测试的数字多波束形成验证方法,模拟4个不同方位、俯仰的固定目标,利用天线对其进行方位、俯仰多层扫描,获取水平方向图和俯仰方向图.结果表明方向图测试法能够验证数字多波束偏移角度与权值系数的正确性,较好地解决了工程中数字多波束形成验证问题.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.