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The nonlinear photoresponse to a 1.56μm infrared continuous wave laser in semi-insulating (SI) galliu- marsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the Dhotocurrent and dark current 相似文献
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Different electro-optic effects, such as Kerr effect, Pockels effect induced by the electric field or strain, and plasma dispersion effect exist in silicon. Experimentally distinguishing these effects is necessary for designing silicon-based electro-optic devices. According to their different polarization dependencies and frequency responses, these effects are measured and distinguished successfully via a transverse electro-optic modulation experiment based on the near-intrinsic silicon sample. The results indicate that Pockels effect induced by the electric field or strain is primary among these effects in the near-intrinsic silicon sample. 相似文献
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低强度X射线影像系统的噪声分析及图像去噪处理 总被引:4,自引:0,他引:4
新型低强度X射线影像系统主要是由平板式单近贴静电聚焦X射线像增强器和CCD数据采集系统构成,根据系统的组成,分析了图像噪声来源,指出了它们的噪声整全为泊松分布规律的随机白噪声,局部也有正负脉冲干扰等特点,以此提出了处理该图像噪声的“多帧平均滤波+极值中值滤波”的复合算法,即先根据随机噪声互不相关的特点,将多幅图像叠加平均,突出有效信息,压缩噪声。再在改进标准中值滤波基础上,采用极值中值滤波,更好地去除噪声,保留细节。通过对峰值信噪比的计算表明,该方法明优于任何单一算法,取得较好效果。 相似文献
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给出了三代微光像管中微通道板离子壁垒膜对入射正离子阻止作用的描述,引进了核阻止本领、电子阻止本领和平均射程的概念。结合Tomas-Fermi屏蔽势进行了分析讨论和Monte-Carlo模拟计算,给出Al2O3和SiO2薄膜对不同能量垂直入射时的核、电子阻止的定量结果。得出了Al2O3薄膜阻止本领比SiO2阻止本领高的结论。证实了选用Al2O3离子壁垒膜的科学性和可行性。 相似文献
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The transverse electro-optic(EO)modulation system is built based on cubic boron nitride(cBN)single crystals unintentionally doped and synthesized at a high pressure and high temperature.The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained.This method does not need to measure the absolute light intensity.All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are{111}planes.The rectangular parallelepiped cBN samples are obtained by cleaving along{110}planes and subsequently grinding and polishing{112}planes of the tiny octahedral cBN flakes.Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations,and the measured results are very close,about 3.68 and 3.95 pm/V,respectively,which are larger than the linear EO coefficients of the general III-V compounds. 相似文献
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