天然气在不同初始温度和压力下的燃烧特性研究

利用定容燃烧弹研究了不同初始温度和初始压力下的天然气燃烧特性,分析了初始温度、初始压力和当量比对其燃烧过程的影响.研究结果表明:随着初始温度的升高(300～450 K),天然气质量燃烧速率明显增加,燃烧持续期和火焰发展期显著缩短.随着初始压力的升高(0.1～0.75 MPa),天然气质量燃烧速率明显减慢,燃烧持续期和火焰发展期显著增长.且稀混合气和浓混合气条件下初始温度和初始压力的变化对燃烧持续期和火焰发展期的影响更明显.     

High-Efficient Organic Light-Emitting Diodes Using Indium Tin Oxide Treated by KMnO4 Solution as Anode

High-efficient organic light-emitting diodes (OLEDs) with indium-tin-oxide (ITO) anode treated by KMnO4 solution are demonstrated. The performance of the OLEDs depends on the concentration of KMnO4 solution and time of ultrasonic treatment. The OLED whose ITO anode was treated by ultrasonic in KMnO4 solution with concentration of 50mg/L for 15 rain displays the best performance. It has higher electroluminescent brightness and lower turn-on voltage than those of traditional devices. In particular, its efficiency can be increased by approximately 40％. The surfaces of the ITO anode with and without treating are analysed by scanning electron microscopy.     

Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density

This paper utilizes multilayer organic light-emitting diodes with a thin layer of dye molecules to study the mechanism of charge trapping under different electric regimes. It demonstrates that the carrier trapping was independent of the current density in devices using fluorescent material as the emitting molecule while this process was exactly opposite when phosphorescent material was used. The triplet--triplet annihilation and dissociation of excitons into free charge carriers was considered to contribute to the decrease in phosphorescent emission under high electric fields. Moreover, the fluorescent dye molecule with a lower energy gap and ionized potential than the host emitter was observed to facilitate the carrier trapping mechanism, and it would produce photon emission.     

一种有机量子阱结构的光致发光特性

利用高真空有机分子束沉积系统，将两种有机材料，叔丁基联苯基呃二唑（PBD）和8－羟基喹啉铝（Alq),以交替沉积的方式形成一种周期性多异质结结构。从这种结构的能带图上看，类似于无机半导体中的I型量子阱结构，我们称之为有机量子阱结构。这种结构的光致发光（PL）谱线和Alq薄膜的PL谱线相比，峰值向高能量方向偏移了20nm，峰值半高宽窄化了25nm,并对其结果进行了分析