Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

GaN纳米棒的催化合成及其发光特性

使用稀土元素Tb作催化剂, 通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜, 成功制备出GaN纳米棒. X射线衍射测试显示, GaN纳米棒具有六方结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出, 纳米棒为单晶GaN, 纳米棒的直径为50-150 nm, 长度约10 μm. 光致发光谱在368.6 nm处有一强的紫外发光峰, 说明纳米棒具有良好的发光特性. 讨论了GaN纳米棒的生长机制.     

Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si（111） substrates

A mass of GaN nanowires has been successfully synthesized on Si（111） substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.