排序方式: 共有7条查询结果,搜索用时 39 毫秒
1
1.
Photoluminescence spectra of a series of MBE-grown Hg1-xCdxTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, DoX, AoX and DoAo transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively. 相似文献
2.
Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component. 相似文献
3.
4.
报道了调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型
关键词: 相似文献
5.
Photoluminescence spectra of a series of MBE-grown Hg1-xCdxTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, DoX, AoX and DoAo transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively. 相似文献
6.
报道了调制掺杂的应变In_(0.60)Ga_(0.40)As/In_(0.52)Al_(0.48)As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型对实验结果进行了解释. 相似文献
7.
1