Electronic structure and spin–orbit coupling in ternary transition metal chalcogenides Cu2TlX2 (X = Se,Te)

Ternary transition metal chalcogenides provide a rich platform to search and study intriguing electronic properties. Using angle-resolved photoemission spectroscopy and ab initio calculation, we investigate the electronic structure of Cu$_{2}$Tl$X_{2}$ ($X=\text{Se, Te}$), ternary transition metal chalcogenides with quasi-two-dimensional crystal structure. The band dispersions near the Fermi level are mainly contributed by the Te/Se p orbitals. According to our ab-initio calculation, the electronic structure changes from a semiconductor with indirect band gap in Cu$_{2}$TlSe$_{2}$ to a semimetal in Cu$_{2}$TlTe$_{2}$, suggesting a band-gap tunability with the composition of Se and Te. By comparing ARPES experimental data with the calculated results, we identify strong modulation of the band structure by spin-orbit coupling in the compounds. Our results provide a ternary platform to study and engineer the electronic properties of transition metal chalcogenides related to large spin-orbit coupling.     

Ultra-broadband enhanced nonlinear saturable absorption for Mo0.53W0.47Te2 nanosheets

Alloying in two-dimension has been a hot spot in the development of new,versatile systems of optics and electronics.Alloys have been demonstrated to be a fascinating strategy to modulate the chemical and electronic properties of two-dimensional nanosheets.We firstly reported ultra-broadband enhanced nonlinear saturable absorption of Mo0.53W0.47Te2 alloy at 0.6,1.0,and 2.0μm.The nonlinear saturable absorption of Mo0.53W0.47Te2 saturable absorber(SA)was measured by the open aperture Z-scan technique.Compared to MoTe2 and WTe2 SAs,the Mo0.53W0.47Te2 SA showed five times deeper modulation depth,8.6%lower saturable intensity,and one order larger figure of merit.Thus,our research provides a method of alloys to find novel materials with more outstanding properties for optics and optoelectronic applications.     

Surface electron doping induced double gap opening in Td-WTe2

By using scanning tunneling microscopy, we investigated the electronic evolution of T_d-WTe₂ via in-situ surface alkali K atoms deposition. The T_d-WTe₂ surface is electron doped upon K deposition, and as the K coverage increases, two gaps are sequentially opened near Fermi energy, which probably indicates that two phase transitions concomitantly occur during electron doping. The two gaps both show a dome-like dependence on the K coverage. While the bigger gap shows no prominent dependence on the magnetic field, the smaller one can be well suppressed and thus possibly corresponds to the superconducting transition. This work indicates that T_d-WTe₂ exhibits rich quantum states closely related to the carrier concentration.     

Surface Structure and Reconstructions of HgTe(111) Surfaces

Hg Te(111) surface is comprehensively studied by scanning tunneling microscopy/spectroscopy(STS).In addition to th√e prim√itive(1 × 1)√ hexagonal lattice,six reconstructed surface structures are observed:(2 × 2),2 × 1,4 × 1,3 ×(1/2)3,2(1/2)2 × 2 and (1/2)11 × 2.The(2 × 2) reconstructed lattice maintains the primitive hexagonal symmetry,whi√le the lattices of the other five reconstructions are rectangular.Moreover,the topographic features of the3 ×(1/2)3 reconstruction are bias dependent,indicating that they have both topographic and electronic origins.The STSs obtained at different reconstructed surfaces show a universal dip feature with size ～100 mV,which may be attributed to the surface distortion.Our results reveal the atomic structure and complex reconstructions of the cleaved Hg Te(111) surfaces,which paves the way to understand the rich properties of Hg Te crystal.     

助溶剂NH4I条件下CuI晶体的降温法生长及性能研究

以碘化铵(NH4I)作为助溶剂,采用溶液降温法生长CuI晶体.在50 ～60℃温区、6 mol/L助溶剂浓度条件下生长出厘米级尺寸的透明块状晶体.采用XRD、综合热分析(TG/DTA)对晶体进行结构表征,晶体属于γ相,相变温度分别为370℃(γ相→β相)和409℃(β相→α相).利用透射光谱、光致发光谱分析晶体的光学性能,晶体在可见区波段透过率达到70;,在426 nm附近有一个明显的带边特征峰,并伴有一个412 nm的肩峰.霍尔测试表明晶体为p型半导体,相应迁移率为11.88cm2 ·V-1 ·s-1.     

Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS

Dirac semimetals are materials in which the conduction and the valence bands have robust crossing points protected by topology or symmetry. Recently, a new type of Dirac semimetals, so called the Dirac line-node semimetals(DLNSs), have attracted a lot of attention, as they host robust Dirac points along the one-dimensional(1D) lines in the Brillouin zone(BZ).In this work, using angle-resolved photoemission spectroscopy(ARPES) and first-principles calculations, we systematically investigated the electronic structures of non-symmorphic ZrSiS crystal where we clearly distinguished the surface states from the bulk states. The photon-energy-dependent measurements further prove the existence of Dirac line node along the X-R direction. Remarkably, by in situ surface potassium doping, we clearly observed the different evolutions of the bulk and surface electronic states while proving the robustness of the Dirac line node. Our studies not only reveal the complete electronic structures of ZrSiS, but also demonstrate the method manipulating the electronic structure of the compound.