Optimization of gallium nitride-based laser diode through transverse modes analysis

We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation.We optimize the current GaN LD structure by varying the n-GaN layer thickness.The n-type GaN layer is an important factor to determine the optical mode.Finally,we discuss the lasing performance of the GaN LD based on the transverse optical modes.     

近红外光谱法测定黄芩提取物中黄芩苷含量

近红外光谱技术(NIR)是近年来快速发展的一种新型光谱分析技术,具有快速、高效、无污染、非破坏性以及实时分析等优点~([1]),已在农业、烟草、石油化工、医药等多领域得到广泛应用.尤其在药物分析方面,体现出近红外光谱分析的巨大潜力~([2]).     

近红外光谱法测定5-羟基色氨酸的含量

本文利用近红外光谱法建立了5-羟基色氨酸的偏最小二乘(PLS)定量模型。采用相关数法选择波段以及二阶导数、Norris derivative平滑滤波进行数据预处理,所建校正模型的R为0.99907,RMSEC为0.0638,RMSEP为0.0675。经验证模型的预测性能良好,为5-HTP的快速测定提供了一种方法。     

Surface Light Extraction Mapping from Photonic Quasicrystal on Current Two-Dimensional Array of 12-Fold Injected GaN-Based LEDs

A two-dimensional array of dodecagonal photonic quasicrystal （12PQC） is fabricated on the surface of current injected GaN-based LEDs to out-couple guided modes. The spatially-resolved surface light extraction mapping of 12PQC is observed and compared with that of triangular lattice photonic crystal （3PC） by microscopic electrical luminescence and scanning near-field microscopy. The higher enhancement factor of 12PQC is obtained to be larger than that of 3PC. It is shown that 12PQC is more favourable and efficient for light extraction of guided lights.     

Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode

We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5^th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlat.tice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.     

Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes

Ridge InGaN multi-quantum-well-structure （MQW） edge-emitting laser diodes （LDs） were grown on （0001） sapphire substrates by low-pressure metal-organic chemical vapour deposition （MOCVD）. The dielectric TiO2/SiO2 front and back facet coatings as cavity mirror facets of the LDs have been deposited with electron-beam evaporation method. The reflectivity of the designed front coating is about 50% and that of the back high reflective coating is as high as 99.9%. Under pulsed current injection at room temperature, the influences of the dielectric facets were discussed. The threshold current of the ridge GaN-based LDs was decreased after the deposition of the back high reflective dielectric mirrors and decreased again after the front facets were deposited. Above the threshold, the slope efficiency of the LDs with both reflective facets was larger than those with only back facets and without any reflective facets. It is important to design the reflectivity of the front facets for improving the performance of GaN-based LDs.     

胆酸含量的近红外分析数学模型

本文应用近红外技术研究了快速测定胆酸含量的方法.通过测定胆酸在10000~4000cm-1范围内的近红外透射光谱,基于偏最小二乘(PLS)算法,建立了胆酸含量的数学模型.以校正均方差(RMSEC)和相关系数(R)为指标,确定了用于建模的最优近红外波段和光谱预处理方法,并基于此模型预测了9个样品.结果显示,建模效果良好,...     

近红外光谱法应用于奥美拉唑含量分析

基于近红外光谱分析技术建立奥美拉唑定量分析方法.以高效液相色谱法作为参考方法,采用偏最小二乘法(PLS)对同一厂家不同批号的奥美拉唑肠溶胶囊建立校正模型,所建模型相关系数(R)为0.978,校正均方差(RMSEC)为0.0899,交叉验证均方差(RMSECV)为0.182,校正模型的预测均方差(RMSEP)为0.161...