A NEW-TYPE ULTRAVIOLET SHG CRYSTAL——β-BaB_2O_4

On the basis of our work "An anionic group theory of electro-optical and nonlinear optical effects of the crystals", we first proposed the possibility of searching for new-type SHG crystals among the inorganic materials possessing planar ring groups. Since then, a new-type ultraviolet StIG crystal—β-BaB_2O_4 has been developed, a crystal with excellent optical homogeneity, anti-deliquescence and easy-working mechanical properties. Various measurements have been made thereupon of its powder sample tests, phase diagram, structural determination and other performance tests. The following parameters of β-B_aB_2O_4 have thus been determined: space group at room temperature R3, melting point 1095℃, phase transition temperature 925±5℃, transparent band range 190—2500mμ, phase matching angle at 539—270mμ 47°, and radiation damage threshold 2GW/em~2. Its effective SHG coefficient is 3—6 times larger than that of ADP (at different wavelengths). It is expected that this new crystal will find wide and e     

偏硼酸钡晶体本征吸收边的实验研究

本文测定了偏硼酸钡(β-BaB_2O_4)晶体在紫外-真空紫外波段(50nm～350nm)的吸收光谱,及其随温度的变化.用带际间接光学跃迁的理论完满解释了吸收光谱的特性.进而,获得了该晶体的间接边位置为E_o=6,24eV(室温),E_O随温度的变化平均为-6.5×10~(-4)eV/K(288K～363K).此外,还得到了参予带际间接光学跃迁的六种声子的类型和德拜温度.     

利用β-BaB_2O_4晶体的铜蒸汽激光倍频

本文报道用铜蒸汽激光器和β-BaB2O_4倍频晶体产生波长为255nm和289mm的紫外相干光.当输入基波的平均功率为0.5W时,可产生平均功率约3.5mW,峰值功率约7W的倍频波.倍频效率约为0.7%.整个实验装置十分简单.     

钨青铜型铌酸钡钠晶体生长条纹的结构成因与克服途径

作者通过对类钙钛矿和钨青铜型结构晶体生长条纹的分析和观测研究,认为这类晶体属于未填满型结构,存在着结构空位,因而易于在晶体生长过程中引起杂质或其它多余组份进入结构空位而形成生长条纹。这类生长条纹将严重影响晶体的光学质量。实验表明,可以采用掺入少量无害元素,如硼(B_2O_3)填占BNN晶体的空位结构以克服生长条纹,取得了初步成效。     

Growth and Characteristics of Nd^3＋：GdAl3（BO3）4 Crystal

Nd^3 :GdAl3(BO3)4(NGAB) crystal with the size of 30 mm was grown from the solvent system of K2O-Gd2O3-MoO3-B2O3 by combining accelerated seed rotation technology with medium seeded solution growth (MSSG) method,and its crystal structure has been determined by X-ray powder diffraction.It crystallizes in the trigonal system,space group R32 with a=9.2743(2),c=7.2438(1)A,V=538A^3,Z=3and Dc=4.379g/cm^3,The absorption and emission spectra of NGAB in the function of σ and π polarizations at room temperature have been measured.UV generation tuneable in 378-382nm,green(531nm) generation and blue generation tuneable in 436-443 nm as well as red(669)nm generation by self-frequency changing were obtained with the oupput of 105, 119.5,445and 19μJ/pulse,respectively,when the crystal was pumped by a dye laser.     

中红外激光晶体Er∶KPb_2Cl_5的原料制备和晶体生长

本文是对中红外激光晶体Er:KPb2C l5的原材料处理合成和晶体生长进行的研究报道。由于KPb2C l5的合成原料容易水解和氧化,我们设计了合适的方案对原料进行了处理,并成功合成出掺杂的稀土氯化物,然后在自制的垂直两温区晶体生长炉内,用B ridgm an法成功生长出透明的尺寸为22×10×5mm3的Er:KPb2C l5单晶体,并测试了粉末衍射和吸收光谱。     

光折变晶体钛酸秘的折射率和光学均匀性的测量

本文报导光折变晶体钛酸铋的折射率和光学均匀性的测量结果。     

芳氧(硫)基二茂锆衍生物的合成与倍频效应

合成了九个芳氧(硫)基二茂锆衍生物, 所有这些化合物为无色或稍带浅黄色,有较好的透光范围, 其中单芳氧(硫)基二茂锆衍生物大多具有倍频效应, 本研究目的是研究金属有机非线性光学材料。     

芳基膦(胂)酸及其盐的合成、结构与倍频效应研究

本文基于将无机非线性光学材料的有效基团(畸变阴离子基团)及有机共轭体系结合为一体的设想,用改进的Doak-Freedman法合成了一系列芳基膦(胂)酸及其盐共25个化合物,讨论了分子的电子性质及其在晶体中的排列方式.实验结果表明,在这类化合物的分子内存在着一定的电荷转移;对甲苯膦酸的晶体结构分析表明,分子间存在着氢键作用,使分子呈二聚的排列方式.在所合成的化合物中,有6种表现出宏观倍频效应.     

Tm掺杂的激光晶体生长、结构和光谱性能研究

采用顶部籽晶生长法从K2Mo3O10-B2O3助熔剂中生长出15 mm×15 mm×25 mm优质TmxGd1-x Al3(BO3)4(x=1,0.06)晶体.利用X射线单晶衍射仪测定了TmAl3(BO3)4晶体的结构.对Tm3+GAB晶体进行定向切割,测量得到了σ和π方向的偏振的吸收和发射光谱,并根据Judd-Ofelt理论计算了Tm3+在GdAl3(BO3)4中的J-O参数、各个能级的振子强度、自发辐射几率、荧光分支比等参数.