Novel high-sensitivity coherent transceiver for optical DPSK/DQPSK signals based on heterodyne detection and electrical delay interferometer

We present a novel coherent transceiver for optical differential phase-shift keying/differential quadrature phase-shift keying （DPSK/DQPSK） signals based on heterodyne detection and electrical delay interferometer. A simulation framework is provided to predict a theoretical sensitivity level for the reported scheme. High sensitivity of -45.18 dBm is achieved for 2.5-Gb/s return-to-zero （RZ）-DPSK signal, and high sensitivities of -36.83 dBm （I tributary） and -35.90 dBm （Q tributary） are observed for 2.5-GBaud/s RZ-DQPSK signal in back-to-back configuration. Transmission for both signals over 100 km is also investigated. Experimental results are discussed and analyzed.     

Pulsewidth-tunable CSRZ-DQPSK signal generation using DPMZMs

This letter proposes and experimentally demonstrates a simple scheme for generating 40-GBaud carriersuppressed return-to-zero differential quadrature phase shift keying(CSRZ-DQPSK) modulation signals with tunable pulsewidths using two dual-parallel Mach-Zehnder modulators(DPMZMs).The duty cycle of the generated 40-GHz CSRZ-DQPSK pulse train is continuously tuned from 31% to 62%,with the full-width at half-maximum tuned from 7.8 to 15.5 ps,by electrically tuning the delay between the two sine-clock signals in one of the DPMZMs.Error-free performance is achieved after 320-km transmission.     

Using bidirectional modulation of 2-Ch phase modulator as basis for nonlinear distortion compensation in analog photonic links

We propose a third-order intermodulation distortion （IMD3） compensation scheme based on the bidirec- tional modulation of 2-Ch phase modulator （PM）. We realize the destructive combination of IMD3 by using different modulation efficiencies and appropriately adjusting the input optical power ratio to satisfy a fixed relationship with modulation efficiency. The primary advantage of this scheme is that out-of-phase IMD3 is introduced using only one 2-Ch PM, thereby resulting in the cancellation of IMD3. Up to 27-dB suppression in IMD3 is experimentally demonstrated--a feature that will be useful in low-distortion analog or）tical transrni~sirm.     

CVD法制备p-ZnO薄膜/n-Si异质结发光二极管及其性能研究

利用简单的化学气相沉积方法, 首先在n-Si衬底上生长Sb掺杂p-ZnO薄膜, 并在此基础上制作了p-ZnO/n-Si异质结发光二极管．对制备的Sb掺杂ZnO薄膜 在800 ℃下进行了热退火处理, 发现退火后样品的晶体质量和表面形貌都得到明显提高, 并且薄膜呈现的电导类型为p型, 载流子浓度为9.56× 10¹⁷ cm^-3. 此外, 该器件还表现出良好的整流特性, 正向开启电压为4.0 V, 反向击穿电压为9.5 V. 在正向45 mA的注入电流条件下, 器件实现了室温下的电致发光. 这说明较高质量的ZnO薄膜也可以通过简单的化学气相沉积方法来实现, 这为ZnO基光电器件的材料制备提供了一种简单可行的方法. 关键词： CVD p-ZnO 异质结 电致发光     

高功率法拉第隔离器多模退偏特性

理论分析了隔离器在高功率多模激光入射时的自退偏特性.结果表明：线性双折射致退偏与圆双折射致退偏均与入射光功率的平方成正比,线性双折射致退偏与光斑大小无关,而圆双折射致退偏随光斑半径的增大而减小.当光斑半径与旋转晶体半径相比很小时（R0/r0≥80）圆双折射引起的退偏大于线性双折射引起的退偏,当光斑半径接近旋转晶体半径（R0/r0≤3）时,与线性双折射引起的退偏相比,圆双折射引起的退偏可以忽略.对比单模激光入射,在同种条件下,多模入射使得线性双折射致退偏减小了0.4倍, 最小圆双折射致退偏减小为0.05倍.     

CFETR水冷包层电磁结构耦合分析

利用软件 Maxwell 对中国聚变工程实验堆(CFETR)高场侧的水冷陶瓷增殖(WCCB)包层进行电磁分析,得到了包层在等离子体电流线性 36ms 衰减工况下产生的电磁载荷。采用载荷传递耦合法,结合软件 ANSYS可得包层中产生的形变位移和等效应力。分析结果表明,WCCB 包层中产生的最大等效应力符合设计要求,且形变位移均在许用范围之内,初步验证了包层结构设计的合理性。     

Towards 640 Gbit/s wavelength conversion based on nonlinear polarization rotation in a semiconductor optical amplifier

Taking into account ultra-fast carrier dynamics, this paper models 640 Gbit/s wavelength conversion scheme based on nonlinear polarization rotation （NPR） in a single semiconductor optical amplifier （SOA） and investigates the performance of this kind of wavelength conversion scheme in detail. In this model, two carrier temperature equations are introduced to substitute two energy density equations, which reduce the complexity of calculation in comparison with the previous model. The temporary gain and phase shift dynamics induced by ultra-short optical pulses are numerically simulated and the simulated results are qualitatively in good agreement with reported experimental results. Simulated results show that non-inverted and inverted 640 Gbit/s wavelength conversions based on NPR are achieved with clear open eye diagrams. To further investigate the performance of the non-inverted wavelength conversion scheme, the dependence of output extinction ratio （ER） on some key parameters used in simulation is illustrated. Furthermore, simulated analyses show that high performance non-inverted wavelength conversion based on NPR can be achieved by using a red-shifted filtering scheme.     

CFETR水冷陶瓷增殖剂包层中子学分析

基于中国聚变工程实验堆(CFETR)水冷陶瓷增殖剂(WCCB)三维中子学模型，应用蒙特卡罗输运程序MCNP5和IAEA聚变评价核数据库FENDL2.1，完成了WCCB中子学性能分析。研究了在200MW、500MW、1.0GW、1.5GW聚变功率下中子壁载荷(NWL)、氚增殖率(TBR)、核热沉积以及包层材料的辐照损伤。结果显示，目前WCCB包层核分析结果满足CFETR设计要求。     

高功率隔离器单模与多模工作退偏特性

以传统结构隔离器为模型,应用琼斯理论,比较分析了单模与多模激光入射时高功率隔离器热致退偏特性。研究结果表明:高功率隔离器热致退偏可分为线性双折射致退偏与圆双折射致退偏;两种退偏均与入射激光功率的平方成正比;在光功率一定的条件下,线性双折射致退偏不随光斑半径的变化而变化,圆双折射致退偏随光斑半径的增大而减小;在其它条件相同的条件下,多模光场能够有效地降低隔离器热致退偏,多模时线性双折射致退偏仅为单模时退偏的60%,圆双折射致退偏也比单模时要小,减小幅度随光斑半径的增加而增加。