有机电致发光器件中的新型双极主体材料的合成及应用

设计并合成了一种由咔唑和噁二唑基团构成的,具有双极载流子传导特性的新型主体材料C1PBD。通过对C1PBD的光物理和电化学性能进行研究,证明这种新型的双极主体材料可以用作为蓝色荧光器件的主体材料.利用传统蓝色荧光掺杂材料TBPe,制备了C1PBD作为主体材料的器件,并对其性能进行了表征,器件开启电压约为3.2 V,最大电流效率达到2.26 cd/A,器件表现出稳定的蓝色发光,CIE值稳定在(0.14,0.14),展现了C1PBD作为主体材料的良好性能.     

双极绿色磷光主体材料1-甲基-3-[4-(9-咔唑基)苯基]-4-苯基喹啉-2(1H)-酮的合成与性能研究

设计并合成了一种基于喹诺酮衍生物的双极绿色磷光主体材料1-甲基-3-[4-(9-咔唑基)苯基]-4-苯基喹啉-2(1 H)-酮.计算发现,化合物的HOMO轨道的电子云位于咔唑基团,LUMO轨道的电子云位于喹诺酮基团,是一种良好的双极材料.化合物的磷光发射峰为515 nm(2.41 eV),符合绿色磷光主体材料的基本要求(>2.4 eV).热失重和差热分析结果表明,该化合物具有较高的热稳定性,分解温度和玻璃化转变温度分别为312℃和105℃.研究结果表明:该新型化合物是一种潜在的具有双极特性的绿色磷光主体材料.     

基于香豆素衍生物的新型绿色/红色磷光有机电致发光主体材料的设计、合成及性能表征

设计并合成了一种新型的香豆素衍生物,3,3-’(1,3-苯基)双(7-乙氧基-4-甲基香豆素)(mEMCB),并系统地对该香豆素衍生物进行了结构表征、光物理性能、热物理性能及电化学性能的研究.mEMCB具有较高的三重态能级(2.42eV),可敏化绿色、红色磷光掺杂材料.同时,mEMCB还具有较好的热稳定性(T_g:79.72℃,T_d:361.49℃),其T_g明显高于目前广泛使用的磷光主体材料CBP.研究结果表明,mEMCB是一个潜在的可以用于绿色和红色磷光有机电致发光器件的主体材料.     

金沙江美姑河牛牛坝水电站库区泥石流对工程影响分析

金沙江美姑河牛牛坝水电站库区泥石流沟分布面积广、发生频率高;调查表明库区现有不同类型泥石流沟31条,其中属于高度危险的泥石流沟4条,中度危险的泥石流沟15条;这些泥石流不会造成严重的堵河问题。在施工期泥石流对水电站工程的影响突出,特别是靠近库首的泥石流对工程的安全构成威胁。水库蓄水后,库区泥石流对水电站工程影响有所降低,但位于大坝下游区的泥石流对水电站正常运行仍有较大的影响。     

压电性材料在电场中形变的观察与研究

用改进后的迈克耳孙干涉仪测量在低频低压及直流恒压下具有压电性的物质(铌酸锂材料,即蜂鸣器)上各点的形变量随电压的变化关系,由此得到每伏特电压形变在样品上的分布.     

GARCH模型估计方法选择及对上证指数的应用

本文介绍了对ARCH/GARCH模型的两种估计方法:准极大似然估计和极小绝对偏差估计,并提出了一种基于自助法(Bootstrap)对估计方法的选择。在厚尾程度不同的情况下进行了模拟分析,表明对于一个具体的数据,该选择法能够自动选择较优的估计方法。并用该方法对上海证券交易所A股和B股的股价指数进行了分析,印证了上海股市B股收益率的尾部厚于A股收益率尾部。     

SPICE modeling of flux-controlled unipolar memristive devices

Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.     

蒸馏沉淀聚合法制备窄分散聚二乙烯基苯-co-丙烯腈功能聚合物微球

采用蒸馏沉淀聚合法,利用过氧化苯甲酰(BPO)为引发剂,在不加任何稳定剂和不搅拌的情况下,丙烯腈(AN)和二乙烯基苯(DVB)为共聚单体制备了不同交联度的微米和亚微米窄分散聚合物微球,考查了共聚单体对球体的影响,并用扫描电镜(SEM)和红外光谱对微球进行了表征.     

Note on Higgs Decay into Two Photons H → γγ

The Higgs decay H →γγ due to the virtual W-loop effect is revisited in the unitary gauge by using the symmetry-preserving and divergent-behavior-preserving loop regularization method,which is realized in the fourdimensional space-time without changing original theory.Though the one-loop amplitude of H →γγ is finite as the Higgs boson in the standard model has no direct interaction with the massless photons at tree level,it involves both tensor-type and scalar-type divergent integrals which can in general destroy the gauge invariance without imposing a proper regularization scheme to make them well-defined.As the loop regularization scheme can ensure the consistency conditions between the regularized tensor-type and scalar-type divergent irreducible loop integrals to preserve gauge invariance,we explicitly show the absence of decoupling in the limit M W /M H → 0 and obtain a result agreeing exactly with the earlier one in the literature.We then clarify the discrepancy of the earlier result from the recent one obtained by R.Gastmans,S.L.Wu and T.T.Wu.The advantage of calculation in the unitary gauge becomes manifest in that the non-decoupling arises from the longitudinal contribution of the W gauge boson.     

Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.