量子阱数量变化对双波长LED作用的研究

采用软件理论分析的方法分析了InGaN/GaN量子阱数量变化对双波长发光二极管发光光谱、内量子效率、电子空穴浓度分布、溢出电流等产生的影响.分析结果表明,量子阱数量的增加会引起载流子分配不均的现象,所以量子阱数量的增加并不能有效地提升载流子复合率、内量子效率和发光强度,还会引起开启电压升高的现象,影响能量转化效率.此外,不同发光波长的量子阱数量的增加会引起发光光谱强度的变化. 关键词： 量子阱 数量 数值模拟 双波长发光二极管     

量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响（英文）

理论上研究了当InGaN发光二极管(LED)有源区的量子阱数变化时,LED的大信号瞬态响应特性与这种变化的关系。结果来自于LED等效电路模型的SPICE模拟,模型参数的确定通过拟合已测量的LED的实验数据及模拟结果来实现。结果表明,LED光脉冲的上升时间随量子阱数的增加而增加,由3个量子阱构成的有源区是LED的优化结构。     

白光LED用新型MgAl2O4/Ce∶YAG透明陶瓷的发光性能

采用金属醇盐法制备MgAl2O4前驱体,通过高温煅烧2～4 h得到纯相MgAl2O4粉体,再将其与YAG∶Ce荧光粉均匀混合,利用热压烧结并结合热等静压处理得到MgAl2O4/Ce∶YAG透明陶瓷。利用X射线衍射、紫外-可见分光光度计等测试手段对样品进行表征。样品由MgAl2O4和YAG两相组成,在340 nm和475 nm有两个激发峰。发射光谱在533 nm有一宽峰,属于Ce3+的5d→4f特征跃迁发射。该透明陶瓷封装蓝光芯片所得白光LED器件在35 mA驱动下的发光效率为133.47 lm.W-1,其寿命及色温稳定性优于采用传统方式封装的白光LED。实验结果表明MgAl2O4/Ce∶YAG透明陶瓷是一种可用于白光LED的新型荧光材料。     

新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高

分别对3种不种电子阻挡层的蓝光AlGaN LED进行数值模拟研究。3种阻挡层结构分别为传统AlGaN电子阻挡层,AlGaN-GaN-AlGaN电子阻挡层和Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层。此外对这对三种器件的活性区的载流子浓度、能带图、静电场和内量子效率进行比较和分析。研究结果表明,相较于传统AlGaN和AlGaN-GaN-AlGaN两种电子阻挡层的LED,具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED具有较高的空穴注入效率、较低的电子外溢现象和较小的静电场(活性区)。同时,具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED的efficiency droop现象也得到一定的缓解。     

Be和Ca掺杂纤锌矿ZnO的晶格常数与能带特性研究

利用密度泛函理论平面波的赝势方法,对Be、Ca掺杂纤锌矿ZnO的BexZn1-xO,CayZn1-xO三元合金和BexZn1-xO,CayZn1-xO四元合金的晶格常数、能带特性和形成能进行计算,结果表明：BexZn1--xO晶格常数随Be掺杂量的增大线性减小,但CayZn1-yO晶格常数随ca掺杂量的增大而增大．BexZn1-xO和CayZn1-yO能带的价带顶都由O2p态电子占据,导带底由Zn4s态电子占据,其能隙随Be或Ca掺杂量的增大而变宽．由Be和Ca共掺ZnO得到的Be0．125Ca0．125Zn0．75O四元合金,其晶格常数与ZnO相匹配,能隙比ZnO大,稳定性优于Be0．25Ca0．125Zn0.625O和Be0．5Zn0．50合金,Be0．125Ca0．125Zn0.75O／ZnO异质结构适合制作高质量ZnO基器件．     

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode(LED) with an AlGaN/InGaN superlattice(SL)electron-blocking layer(EBL) is studied numerically,which involves the light-current performance curve,internal quantum efficiency electrostatic field band wavefunction,energy band diagram carrier concentration,electron current density,and radiative recombination rate.The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram,which is favorable for the injection of holes and confinement of electrons.Additionally,the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AlGaN HBL with gradual Al composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conventional p-AlGaN EBL or a common n-AlGaN HBL. Meanwhile, the efficiency droop is alleviated when an n-AlGaN HBL with gradual Al composition is used.     

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

The performance of InGaN blue light-emitting diodes(LEDs) with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer(EBL) has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.     

The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers.The simulation results show that efficiency droop is markedly improved due to two reasons:(i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices,and(ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices.     

第一性原理研究Mg，Si和Mn共掺GaN

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mg,Si和Mn共掺GaN电子结构和光学性质,分析比较计算结果.计算表明：掺杂后体系均在能隙深处产生自旋极化杂质带,具有半金属性,能产生自旋注入.与Mn掺杂GaN比较,Mg共掺后能使居里温度(T_C)升高,并在1.0eV出现源于Mn⁴⁺离子基态⁴T₁(F)到⁴T_{2关键词： Mg Si和Mn共掺GaN 电子结构 TC)')" href="#">居里温度(TC) 光学性质}