基于绝缘体上的硅材料的全内反射型阵列波导光栅器件的设计

设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器年。将一全内反射波导镜引入原弯曲的波导列阵中，该波导镜具有偏振补偿的功能和缩小器件尺寸的特点。在器年数值模拟的基础上，制作了原理性器件，并获得了初步的实验结果。     

用于纳米粒子检测的双环谐振器

设计了一种可以探测单个纳米粒子的光学传感器结构,该结构由双环、双环间耦合区的通孔和直波导构成,并引入了Fano效应,进一步增强了粒子在光场中出现时的光耦合场变化.当纳米粒子穿过两个微环间的通孔时,其耦合系数和输出端的光强均发生变化,提出了一种基于双环谐振器结构的高精度耦合系数传感方法,通过检测双环谐振器耦合系数和输出端光强的变化对单体纳米粒子进行精确检测和计数.理论计算结果表明,在损耗为1 dB/cm的情况下,与单环结构相比,双环结构的灵敏度提升了两个数量级.该双环结构在减小波导损耗的同时有效提升了检测灵敏度.     

含酰胺结构的硅胶键载二乙烯三胺螯合微粒的合成及其吸附性能

硅胶与γ-氨丙基三甲氧基硅烷(AFFS)进行硅烷化反应,然后与丙烯酸甲酯(MA)进行迈克尔加成反应引入酯基,最后与二乙烯三胺(DETA)反应生成氨基结尾的酰胺基硅胶,其结构经红外光谱、元素分析,热重分析(TG)和X射线衍射仪(XRD)表征.元素分析表明,Ⅰ、Ⅱ、Ⅲ的氨基含量分别为1.992mmol/g、1.699mmol/g、3.416mmol/g.研究了该硅胶微粒对重金属离子Ag 、Hg2 、Cu2 的吸附容量、吸附动力学、等温吸附过程等静态吸附性能.结果表明,对3种离子的吸附量分别为0.71mmol/g、0.46mmol/g,0.35mmol/g.动力学吸附过程为液膜扩散控制,吸附过程符合Langmuir或Freundlich模型.     

A Novel Coupled Quantum Well Structure with Low-Driving Voltage, Low Absorption Loss and Large Field-Induced Refractive Index Change

Based on a two-energy-level system, we analyse the changing ground eigenenergies of symmetric CaAs/Alx Ca1-x As coupled quantum wells in the presence of an applied electric field. From the theoretical analysis for symmetric coupled quantum well, we find the advantages and disadvantages when it is applied to travelling wave modulator.Hence the conception of quasi-symmetric coupled quantum wells is put forward. Based on the demands of travelling wave modulator for quantum well materials, the configuration of quasi-symmetric coupled quantum well is further optimized. Consequently, in the case of low applied electric field (F=20 kV/cm) and low absorption loss (α≤100cm^-1), a large field-induced refractive change △n (for TE mode, △n = 0.021; for TM mode, △n=0.0121) is attained in the optimized coupled quantum well.     

一类Dirichlet边值逆问题

给出解析函数的一类Dirichlet边值逆问题的数学提法.依据解析函数Dirichlet边值问题和广义Dirichlet边值问题的理论,讨论了此边值逆问题的可解性.利用解析函数Dirichlet边值问题的Schwarz公式,给出了该边值逆问题的可解条件和解的表示式.     

High Speed 2×2 Optical Switch Based on Carrier Injection Effect in GaAs/AlGaAs

A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below lOns. The fiat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.     

Optical Ring-Resonator Modulator Based on 0.8 μm CMOS Technology

Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8μm complementary metal oxide semiconductor foundry. The device configuration is based on a single ring resonator coupled to one bus waveguide. The waveguide widths are about 1 μm. The p-i-n junctions are employed to inject currents. The experimental result shows that the ring resonators with the quality factor of above 40000 are obtained. The maximum extinction ratio of the modulators is larger than 10dB. The speed is tens of nanoseconds, and the corresponding injected current is smaller than 10 mA.     

载流子色散型硅基CMOS光子器件

为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18 dB,1×2光开关消光比约21 dB,谐振环的消光比8～12 dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.     

圆碟中回音壁模式的耦合条件

基于波导的几何光学理论,并考虑谐振腔的品质因素或光子寿命,给出了毫米级圆碟回音壁模式谐振时的条件,应用光子隧道效应,分析了输入输出波导与圆碟的耦合特性,详细分析并给出了品质因素为5×105环形电极铌酸锂圆碟调制器中回音壁模式与波导的耦合与限制条件.提出一种利用铌酸锂Mach-Zehnder波导与同质材料圆碟构成的微波接收转换装置,该装置能够实现推挽操作,在具有较高频率分辨特性的基础上能进一步降低驱动电压,而且器件尺寸进一步减小.     

梯形截面脊波导的特性分析

提出了用有效折射率法结合转移矩阵理论对梯形截面脊波导进行数值分析的新方法。对梯形截面脊波导中模式传播常数和模式间耦合系数的分析表明,梯形截面脊波导与稍宽的矩形截面脊波导行为相同。这一结论有利于简化梯形截面脊波导的设计,提高实际器件的精度。