载流子色散型硅基CMOS光子器件

为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18 dB,1×2光开关消光比约21 dB,谐振环的消光比8～12 dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.     

基于Franz-Keldysh效应的倏逝波锗硅电吸收调制器设计

本文设计了一种基于Franz-Keldysh (FK) 效应的GeSi电吸收调制器. 调制器集成了脊形硅单模波导. 光由脊形硅波导以倏逝波形式耦合进锗硅吸收层. 在硅基锗二极管FK效应实验测试的基础上, 有源区调制层锗硅中的硅组分设计为1.19%, 从而使得器件工作在C (1528–1560 nm) 波段. 模拟结果显示该调制器的3 dB带宽可达64 GHz, 消光比为8.8 dB, 而插损仅为2.7 dB. 关键词： 锗硅 调制器 电光集成     

可调反射器辅助的可重构微环光滤波器

为了适应光学滤波、微波信号处理等各种应用场景的需求,集成硅基光子滤波器需要具备多功能可重构和灵活可调谐特性.本文提出了一种可调反射器辅助的微环光滤波器芯片设计.通过传输矩阵模型,仿真结果表明,该器件可实现4种自由光谱范围的切换、100 dB消光比滤波、带通与带阻切换、Fano共振、类似电磁感应透明和类似电磁感应吸收等谱型的重构,且每种谱型均可以实现滤波中心频率的大范围调谐.本技术在集成光子模拟信号处理和微波光子学等领域具有广阔的应用前景.     

基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

用于10Gb/s传输系统的电吸收调制器与分布反馈激光器集成光源

采用超低压(22×１０^２Pa)选择区域生长(selective area growth, SAG)金属有机化学气相沉积(metal-organic chemical vapor deposition, MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator, EAM)与分布反馈激光器(distribute feedback laser, DFB)单片集成光源的新型光电器件.实验结果表明，采用该技术制备的集成器件表现出了良好的性能：激射阈值为19 mA，出光功率接近7 mW，边模抑制比(side-mode suppression ratio, SMSR)大于40 dB，将该集成器件出射光耦合进普通单模光纤后进行测量，获得了16 dB的消光比，器件3 dB响应带宽达到了10 GHz以上.将该集成器件完全封装后成功进行了10 Gb/s非归零码(non-return zero, NRZ)的传输实验：在误码率为10^-10的传输条件下于普通单模光纤中传输了53.3 km，色散代价小于1.5 dB，动态消光比大于8 dB，且眼图清晰张开. 关键词： 超低压 选择区域生长 集成光电子器件 10 Gb/s     

基于Ti扩散铌酸锂偏振分束器的研制

对定向耦合型偏振分束器的原理进行了分析。设计了一种零间距定向耦合器,在空间上实现TE/TM模式分束;用BPM软件对所设计的器件进行仿真模拟,对于TE/TM模的消光比分别可以达到21.2dB和19.5dB;该器件在X切Y传的LiNbO3晶片上采用Ti扩散技术制作完成。实验样品消光比测试结果TE/TM模分别为11.5dB和19.1dB,对于消光比不够理想的原因进行了初步的分析。     

硅基光子集成研究进展

报道了国际上关于硅基光子集成的最新研究进展和本课题组在该领域的研究成果,包括对一些光收发模块、III-V族/硅基激光器等集成器件的结构改进和工艺的探索,展示了兼容互补金属氧化物半导体工艺的硅基光子集成在信息技术领域中的巨大前景.可以预见,硅基光子集成已成为硅光子学的主要研究内容,硅光子学及硅基光子集成的发展目标是趋向更高速率、更低功耗及更大集成密度.     

硅基光波导化学传感器研究

研究了基于硅基集成光波导的马赫-曾德干涉仪(MZI)型化学传感芯片的设计、制备及相关敏感特性的模拟和分析.传感芯片采用硅基二氧化硅光波导材料,利用与传统互补型金属氧化物半导体(CMOS)兼容的工艺技术制作.通过波导的单模设计以及对MZI结构的优化,获得了有效折射率分辨率达到10-7量级的高灵敏度传感芯片.作为化学传感器,把MZI的其中一臂设计成传感臂.并进行适当的表面修饰,可制作出高灵敏度的干涉型光波导化学传感器.最后,对该传感器的折射率分辨率、敏感特性等进行了分析、模拟,同时,对面临的关键问题进行了分析和讨论.     

一种定向耦合器型高聚物光开关设计

本文提出了一种基于定向耦合器型的高分子聚合物波导光开关设计,其突出特点是极低的波长相关性和耦合区几何尺寸敏感度,可采用橡胶成型工艺(Rubber Molding Process)实现高聚物波导在硅基底上的快速转印成型.利用BPM方法进行了器件的波导结构设计及性能模拟,插入损耗为0.4-0.6 dB,串扰<-32 dB,偏振相关损耗约为0.08 dB,电光系数r33＝14 pm/V时,器件的开关电压为42 V.     

基于交叉相位调制效应的硅基全光Fredkin门

虽然传统的Fredkin门可以很好地实现相应的逻辑功能,但是其消光比和串扰还有待进一步改善。鉴于此,本文提出并设计一种基于交叉相位调制效应的硅基全光Fredkin门,该全光可逆逻辑门由两个2×2的定向耦合器、一个2×1的定向耦合器、一个1×2的定向耦合器以及两个相移臂构成。利用泵浦光与信号光在相移臂中引发的交叉相位调制效应,可以改变上、下相移臂中信号光的相位差,从而在所设计器件的不同端口处输出不同幅度的光波,继而实现Fredkin门的逻辑功能。与此同时,利用MATLAB并融入分步傅里叶法对所设计的硅基全光Fredkin门进行仿真分析。仿真结果表明,器件的最差消光比可达48.46 dB。     

SOI nanophotonic waveguide structures fabricated with deep UV lithography

To reduce the dimensions of photonic integrated circuits, high-contrast wavelength-scale structures are needed. We developed a fabrication process for Silicon-on-insulator nanophotonics, based on standard CMOS processing techniques with deep UV lithography. Measurements using either end-fire incoupling or grating-based fibre couplers show photonic crystal waveguides with moderate propagation losses (7.5 dB/mm) and photonic wires with very low propagation losses (0.24 dB/mm).     

Design and analysis of coherent OCDM en/decoder based on photonic crystal

The design and performance analysis of a new coherent optical en/decoder based on photonic crystal (PhC) for optical code -division -multiple (OCDM) are presented in this paper. In this scheme, the optical pulse phase and time delay can be flexibly controlled by photonic crystal phase shifter and time delayer by using the appropriate design of fabrication. According to the PhC transmission matrix theorem, combination calculation of the impurity and normal period layers is applied, and performances of the PhC-based optical en/decoder are also analyzed. The reflection, transmission, time delay characteristic and optical spectrum of pulse en/decoded are studied for the waves tuned in the photonic band-gap by numerical calculation. Theoretical analysis and numerical results indicate that the optical pulse is achieved to properly phase modulation and time delay, and an auto-correlation of about 8 dB ration and cross-correlation is gained, which demonstrates the applicability of true pulse phase modulation in a number of applications.     

Compact photonic delay line constructed by holographic optical elements

To fully support phased-array antenna and other applications, a 3-range (long time, moderate time, and short time) delay line structures with holographic optical elements is proposed. Flexibility, light-weight, on-axis coupling, easy alignment, easy fabrication, and compactness are their advantages. When use holographic optical elements to build the photonic delay line system, all of the delay and non-delay paths in these three photonic delay lines are setting in a compact structure. They do not need any extra components, such as mirrors and optical paths in free space, and can bear stronger vibration. Therefore, the holographic optical elements are more suitable to design the photonic delay lines. In these three structures, their losses and crosstalk s are balanced. All of delay and non-delay cases in these three delay line structures, their crosstalk, signal-to-noise ratio, and loss are 1/81,000, 59.1 dB, and 3.2 dB, respectively. Finally, to support complete applications, a polarization independent photonic delay line system with holographic optical elements is proposed, too.     

A 28GHz CMOS FREQUENCY DOUBLER WITH TFMS

In this paper, a 28GHz CMOS frequency doubler with TFMS (thin film microstrip line) has been introduced in order to experimentally study the possibility of millimeter wave CMOS devices based on TFMS. The present doubler shows 2dB conversion loss and approximately 12dB suppression to fundamental frequency. The result shows that the CMOS technology compatible TFMS are promising on the design of millimeter-wave CMOS devices.     

硅基GHz高速电光调制器研究进展

硅基高速电光调制器是新一代密集波分复用系统和光时分复用系统中的关键光电子器件，他的运用可以降低光通讯系统的制作成本并且大大有利于未来的硅基光电集成．目前国际上已经实现的硅基高速电光调制器件的调制速率已经超过6GHz．文章对国外硅基高速电光调制器的最新研究进展进行了介绍，评述了各种基于不同电学和光学结构的硅基电光调制器，对不同类型器件在制作和应用中的优缺点进行了比较．     

Optical characteristics of one-dimensional photonic crystals composed of high-aspect-ratio Si walls fabricated on V-grooved wafer

We demonstrate optical properties of one-dimensional photonic crystals (PC), which are fabricated using high-aspect-ratio etching on a V-grooved silicon wafer. The measured transmission spectrum has an obvious band gap; the suppression is over 30 dB. The quite small insertion loss of 1.9 dB is achieved by induced coupled plasma (ICP) cryogenic etching and direct coupling to the optical fiber aligned in the V-groove. We also successfully observed peaks originating from a localized cavity mode. Such a microcavity enables control of the light, which qualifies photonic crystal as a fundamental structure of optical functional devices. These results lead to achievement of integrated Si-based photonic circuits.     

Two-dimensional materials-decorated microfiber devices for pulse generation and shaping in fiber lasers

Two-dimensional(2D) materials have been regarded as a promising nonlinear optical medium for fabricating versatile optical and optoelectronic devices. Among the various photonic applications, the employment of 2D materials as nonlinear optical devices such as saturable absorbers for ultrashort pulse generation and shaping in ultrafast lasers is one of the most striking aspects in recent years. In this paper, we review the recent progress of 2D materials based pulse generation and soliton shaping in ultrafast fiber lasers, and particularly in the context of 2D materials-decorated microfiber photonic devices. The fabrication of 2D materials-decorated microfiber photonic devices, high performance mode-locked pulse generation, and the nonlinear soliton dynamics based on pulse shaping method are discussed. Finally, the challenges and the perspective of the 2D materials-based photonic devices as well as their applications are also discussed.     

基于纳米光学等离子晶体的新型纳米光子学器件的发展

通过设计合适的纳米表面等离子结构,纳米光学等离子晶体具有光场增强效应,能调控近场范围内的光场分布,可用来设计新型的纳米光子学器件。介绍了纳米光学等离子晶体的原理、结构特点、制作工艺和纳米光子学器件的设计方法,对纳米光学等离子晶体和普通光子晶体做了比较。归纳了纳米光学等离子晶体的物理机制、光学特征,描述并分析了波长选择性场增强效应和束流效应等。给出几种基于纳米光学等离子晶体的纳米光子学器件应用实例。