AgO_x界面插入层对GZO电极LED器件性能的影响

采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜,通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能。研究结果表明:氮气退火后,采用界面插入层的AgOx/GZO薄膜电阻率为5.8×10-4Ω.cm,在可见光的透过率超过80%。AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒,表现出良好的欧姆接触特性,同时使LED器件的光电性能获得了显著的提高。在50 mA的注入电流下,相比于常规的GZO电极LED器件,AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V,而发光强度提高了13.5%。     

成像板伽马图像测量研究

研究了成像板辐射图像测量的基本原理及其物理机制,并将其应用于伽马图像测量。建立了MS,SR和TR三种类型成像板数值模拟模型,分别使用MCNPX程序和基于Geant4开发的NPE程序计算了三种成像板对不同能量伽马射线的能量沉积,计算结果表明:SR和MS成像板比TR成像板能量沉积在低能部分大3~5倍,高能部分大7~9倍。实验测量了MS成像板灵敏度随铜膜厚度的变化关系,测量结果与理论计算结果有较好的一致性。理论与实验结果表明:成像板伽马图像测量的空间分辨力优于50 m。     

聚乙烯醇的制备及其分子链键合方式的测定

对物理化学综合性实验“聚乙烯醇的制备及其分子链键合方式的测定”进行了研究,得出了最优制备聚乙酸乙烯酯（PVAc）的实验方案。对PVAc醇解得到聚乙烯醇（PVA）,采用黏度法测定了聚乙烯醇被高碘酸盐降解前后的相对分子质量,从而计算出PVA分子链中“头尾相接”和“头碰头”2种键合方式的比例。     

Reshock Response of 2A12 Aluminum Alloy at High Pressures

By means of mounting the specimen on a low-impedance buffer, reshock experiments were carried out on a 2A12 almninum alloy up to shock stresses＇ of 67.6 GPa. Reshock wave profiles from the initial shock stresses of 60.9-67.6 GPa were measured with a velocity interferometer, and it shows that the 2A12 aluminum alloy characterizes as quasi-elastic response during recompression process. The Lagrange longitudinal velocities along the reloading path from initial shock state were obtained from two shots of experiments, while the bulk velocities at corresponding shock stresses were determined via extrapolating from the public reported unloading plastic sound velocities. Combining the reshock and the release experimental results, the yield strength of 2A12 aluminum alloy at shock stress of 60.9 GPa was estimated to be about 1.7GPa.     

轮对轮缘磨耗的光电图像检测方法

提出用光电图像方法非接触检测车辆轮对的轮缘磨耗。用高精度激光位移传感器实现轮缘内侧面的定位,用激光线光源和高分辨率CCD探测器获取轮缘轮廓,通过与光源波长相匹配的窄带滤波片减少背景光干扰,再结合数字图像处理技术获得轮缘厚度、轮缘高度、垂直磨耗等轮缘磨耗参数。现场使用表明,该方法重复性较好,测量精度和稳定性可满足车辆段修现场的自动检测要求。     

强辐射对Yb∶YAG超快无机闪烁探测器灵敏度影响的实验测量

为了给强脉冲辐射场中应用超快闪烁探测器进行精密物理测试以及相关晶体抗核加固提供实验测量数据参考,针对近年新研制的Yb∶ YAG超快无机闪烁体与GD40光电管构成的快闪烁探测器,在源强近万居的强稳态辐照场中,细致测量了辐射累计伽马剂量从约1 Gy开始到最高约1 kGy全过程中Yb∶ YAG超快闪烁探测器输出电流的变化数据;在测点注量率大于1017cm-2·s-1的“强光一号”短γ脉冲辐射场中,测量了Yb∶ YAG超快闪烁探测器输出脉冲波形响应情况.实验测量结果表明:在强稳态辐射场情况下,对应累计剂量5 ～ 10Gy时,YAG(Yb)闪烁探测器灵敏度下降约5～10;(相对辐照IGy时的情况);测点累计伽马剂量约1 kGy时,Yb∶ YAG超快闪烁探测器的电流输出与约1 Gy时的比值约50;;短γ脉冲辐射情况下,测点累计注量约4×109 cm-2,Yb∶ YAG超快闪烁探测器输出电流约1A时,灵敏度下降约10;(相对累计注量约3×109 cm-2的情况),当测点注量大于1010 cm-2(累积剂量超过100 mGy),Yb∶ YAG超快闪烁探测器会出现较明显的损伤现象.     

表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

ZnO∶Ga(GZO)透明电极沉积在p-GaN表面,用作透明电流扩展层。直接沉积在p-GaN上的p-GaN/GZO存在较大的势垒,容易形成肖特基接触,而良好的欧姆接触对功率LED器件至关重要。为了降低接触势垒,采用盐酸和氢氧化钠溶液对GaN表面进行去氧化层处理,并对p-GaN/GZO进行退火处理,研究表面处理和退火对p-GaN/GZO接触特性的影响。研究表明:碱性溶液处理有利于降低接触势垒;退火处理后,接触势垒略有增加。     

Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density

This paper utilizes multilayer organic light-emitting diodes with a thin layer of dye molecules to study the mechanism of charge trapping under different electric regimes. It demonstrates that the carrier trapping was independent of the current density in devices using fluorescent material as the emitting molecule while this process was exactly opposite when phosphorescent material was used. The triplet--triplet annihilation and dissociation of excitons into free charge carriers was considered to contribute to the decrease in phosphorescent emission under high electric fields. Moreover, the fluorescent dye molecule with a lower energy gap and ionized potential than the host emitter was observed to facilitate the carrier trapping mechanism, and it would produce photon emission.     

Generalized LMI-based approach to global asymptotic stability of cellular neural networks with delay

A global asymptotic stability problem of cellular neural networks with delay is investigated. A new stability condition is presented based on the Lyapunov-Krasovskii method, which is dependent on the amount of delay. A result is given in the form of a linear matrix inequality, and the admitted upper bound of the delay can be easily obtained. The time delay dependent and independent results can be obtained, which include some previously published results. A numerical example is given to show the effectiveness of the main results.     

高斯多峰拟合用于烷基葡萄糖苷临界胶束浓度测量

报道了可见吸收光谱线型的高斯多峰拟合用于新型非离子表面活性剂烷基葡萄糖苷(APG),如辛基-β-D-葡萄糖单苷(C₈G₁)和癸基-β-D-葡萄糖单苷(C10G₁)的临界胶束浓度(CMC)的测定。具体作法是以结晶紫(crystal violet,CV)为探针,测量一系列不同浓度的APG-CV水溶液体系的可见吸收光谱。其光谱特征是CV单体吸收峰598～609 nm和二聚体吸收峰538～569 nm叠合在一起。用高斯多峰拟合法实现了体系可见光谱吸收叠合峰的分峰、峰面积(积分吸光度)、频移及半高宽等光谱线型参数计算。单体和二聚体峰面积比(相对积分吸光度A₂/A₁)、频移(Δλ)及半高宽(w₁,w₂)对APG浓度图形在CMC处发生突变。首次发现可见吸收光谱线型参数半高宽对APG聚集行为敏感,并成功用于APG的CMC测量。