掺杂半导体β-FeSi2电子结构及几何结构第一性原理研究

采用基于第一性原理的密度泛函理论全势线性缀加平面波法，使用广义梯度近似处理交换相关势能，首先计算了β-FeSi₂的电子结构及其各元素各亚层电子的能态密度，β-FeSi₂的电子能态密度主要由Fe的d层电子和Si的p层电子的能态密度确定；其次通过计算不同掺杂系统的总能量确定了掺杂原子在β-FeSi₂中的置换位置，在β-FeSi₂中，Co置换Fe_Ⅱ位置的Fe原子，Al置换Si_Ⅰ位置的Si原子，这种择位置换与现有的计算结果完全一致；最后计算了Fe_1-xCo_xSi₂和Fe(Si_1-xAl_x)₂的电子结构，对它们的电子结构特征进行了分析，并探讨了电子结构对其热电性能(塞贝克系数、电传输及热传输性能)的影响. 关键词： 第一性原理 电子结构 热电性能 2')" href="#">FeSi₂     

F掺杂SnO2电子结构的模拟计算

采用基于密度泛函理论的平面波赝势方法对SnO₂:F体系的电子结构进行了第一性原理模拟计算.用广义梯度近似方法优化SnO₂:F体系的晶胞结构，计算了体系基态总能.通过确定F掺杂对O的优先替代位置，计算了SnO₂:F的能带结构、态密度、分波态密度.分析了F掺杂对SnO₂晶体的电子结构和晶体性质及光学吸收边的影响，从理论上得出光学吸收边发生蓝移.对不同掺杂量的体系电子结构进行了分析. 关键词： F掺杂 2')" href="#">SnO₂ 电子结构 态密度     

Ge,Al掺杂锰硅化和物Mn4Si7的第一性原理计算

基于密度泛函理论(DFT)的第一性原理计算方法,对本征Mn₄Si₇以及Ge, Al单掺杂和共掺杂Mn₄Si₇的晶体结构,能带结构,态密度以及光学性质进行了计算和分析.计算结果表明:本征态Mn₄Si₇的禁带宽度为0.810 eV,为直接带隙半导体材料,掺杂后晶体结构稍微变化,禁带宽度减小,且共掺杂时禁带宽度最小,电导率最好.Al以及Ge, Al共同掺杂时会产生杂质能级.掺杂后光子能量向低能级方向移动,光电导率,光吸收,反射系数都有所增大,说明掺杂改善了Mn₄Si₇的光学性质,从而可以提高光伏发电效率.     

金属有机化学气相淀积技术制备GaMnN薄膜材料光学性质研究

研究由MOCVD 技术制备的 GaMnN 外延薄膜光吸收谱.实验发现Mn掺杂后较未掺杂GaN吸收系数在近紫外区增加,在吸收谱低能区144 eV附近观察到吸收峰,吸收系数随Mn浓度的增加而增大.实验结果与基于密度泛函理论的第一性原理计算结果一致,结合理论计算分析认为144 eV附近的吸收峰源于Mn³⁺离子e态与t₂态间的带内跃迁⁵T₂→⁵E. 关键词： GaMnN MOCVD 密度泛函理论 光学性质     

掺杂MgCNi3超导电性和磁性的第一性原理研究

从第一性原理出发，计算了MgCNi₃的电子能带结构.MgCNi₃中C 2p与Ni 3d轨道杂化使穿梭费米面上的Ni 3d能带表现出平面性，费米面落在态密度范霍夫奇异(vHs)峰的右坡上.vHs峰上大的电子态密度和铁磁相变点附近的自旋涨落是决定MgCNi₃超导电性的重要因素.研究了三种替代式掺杂对其超导电性和磁性的影响，发现电子掺杂使费米能级下滑到态密度较低的位置，导致体系转变为无超导电性的顺磁相；同构等价电子数的金属间化合物的轨道杂化，引起费米面上态密度的减少，降低了超导电性；而空穴掺杂使费米面向vHs峰值方向移动，虽然费米面上电子态密度增大可能提高超导电性，但增强了的Ni原子磁交换作用产生铁磁序，破坏了超导电性. 关键词： 电子结构 超导电性 磁性 掺杂     

密度泛函理论研究硫族元素取代对单层Ag2S结构和电子性质的影响

本文利用第一性原理计算讨论了硫族元素掺杂单层Ag₂S的缺陷形成能和电子性质.缺陷形成能反映了在富Ag条件下的掺杂更容易.计算得到的带隙、Mulliken布居和态密度展示出了其相应结构的电子性质.与纯单层的Ag₂S相比,Se/Te掺杂Ag₂S后的带隙显示出其电导率变化不大.基于Mulliken原子和键布居,研究了硫族元素掺杂后Ag₂S中的共价性.此外,通过讨论态密度,分析了能级的移动和电子的贡献.     

Mn掺杂的ZnS(001)表面的电子态特性

利用第一性原理计算Mn在ZnS(001)表面上几种掺杂位置的形成能、局域分波态密度和磁矩.对Mn在ZnS(001)表面上的三种位置的形成能进行比较,得到两种填隙位置是非常稳定的掺杂位置.分析ZnS(001):Mn各种再构表面的电子态密度和电荷密度分布.结果表明,三种表面模型中,自旋向上的Mn原子的3d态和近邻S原子的3p态都有一定的杂化,并且替代掺杂的Mn和邻近S原子的p-d杂化最明显,形成的共价键最强.而自旋向下的Mn原子的3d态比较局域,受S原子的3p态影响较小.计算了三种掺杂表面的磁矩,并分析计算结果.     

Ti掺杂NbSe2电子结构的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了理想2H-NbSe₂和Ti掺杂2H-NbSe₂晶体的几何结构及电子结构; 对掺杂前后超胞的能带图、态密度及分波态密度图进行了分析. 结果表明, 掺杂后费米能级附近能量区域的电子态密度出现了较高的峰值, 且费米能级位置发生了改变. 理论上可以认为Ti的掺杂会使得NbSe₂的导电性增强, 有利于开发新型的电接触复合材料.     

Mg和Zn掺杂CuAlS2电子结构的分析

从能带结构和态密度分析了黄铜矿CuAlS₂的电子结构.对比未掺杂CuAlS₂,从晶体结构、电子结构、电荷密度分布讨论了Mg和Zn替位Al掺杂对CuAlS₂的影响.结果表明:Mg和Zn掺杂CuAlS₂都导致晶格常数增大,Mg掺杂晶胞体积增大更多;掺杂在价带顶引入受主态,形成p型电导;Mg掺杂比Zn掺杂的受主能级电离能略小;而Zn掺杂CuAlS₂体系总能更低,晶格结构更稳定. 关键词： 2')" href="#">CuAlS₂ p型掺杂 电子结构 能带结构     

CoSi电子结构第一性原理研究

采用基于第一性原理的密度泛函理论全势线性扩展平面波法，首先对CoSi的晶胞参数进行优化计算，CoSi多粒子系统的最低能量为-134684297Ry，此时其晶胞处于最稳态，与最稳态对应的晶胞体积V0等于5899360a.u.3,晶胞参数为a=b=c=04438nm；然后计算了优化后的CoSi的电子结构及Si侧Al掺杂的CoSi075Al025的电子结构并分析了两者的电子结构特征，计算的CoSi电子能态密度与已有的计算结果整体形貌相同，但存在局部差异，Al掺杂后费米面发生了偏移；最后探讨了两者的电子结构对热电性能的影响，Al掺杂可提高CoSi的材料参数B，因此有望提高其热电性能. 关键词： 第一性原理 电子结构 热电性能     

Halogen bonds with N-heterocyclic carbenes as halogen acceptors: a partially covalent character

N-heterocyclic carbenes (NHCs) are important ligands in organometallic catalytic reactions. This study focuses on the halogen bonds with NHCs as the electron donors. The results show that NHCs are better electron donors in halogen bonds. Our interest is how to make a halogen bond having a partially covalent property, which depends on the strength of halogen bonding. The covalent property of halogen bonding is related to the nature of the halogen donor. Iodine is favourable to form a halogen bond with covalent property than chlorine and bromine. The covalent property of halogen bond is greatly affected by substituents. Strong electron-donating groups in NHCs could reinforce the covalent attribute of bromine bonding, whereas strong electron-withdrawing groups in NHCs make iodine bonding lose the covalent nature. The covalent property of halogen bond is further heightened through the cooperative effect between the carbene–halogen bond and another interaction. This covalent property results in a much short binding distance and a prominent bond elongation. The covalent property of halogen bond has been analysed with the energy density, electron local function, and electron density shifts.     

Al掺杂对MgB_2电子结构和超导电性的影响

建立了不同Al掺杂浓度的Mg1-xAlxB2模型并进行几何优化,讨论了掺杂对系统几何构型、能带结构、电子态密度、键布居和超导转变温度的影响.结果表明,随着Al掺杂浓度的增加,B-Mg离子键增强,B-B共价键减弱,B-Al间的弱共价键增强,能带展宽,费米面附近的态密度降低,超导电性减弱.     

Adsorption of glycine on diamond(001): Role of bond angle of carbon atoms

The adsorption behaviors of glycine on diamond(001) are systematically investigated by first-principles calculations.We have considered all possible adsorption configurations without a surface dangling bond and give a quantitative analysis for the relationship between the deviation of carbon bond angle and adsorption energy. We found that a smaller distortion of carbon covalent bond angle results in a more stable adsorption structure, and the most stable adsorption has a benzene-ringlike structure with the highest adsorption energy of 5.11 e V per molecule and the minimum distortion of carbon covalent bond angle.     

Effect of atomic displacements in covalent solids

In covalent materials the electronic wave functions are very sensitive even to small displacements, while with displacements of increasing magnitude the stability of the covalent bond gradually decreases and eventually another type of bond becomes more favourable. This has consequences for some of the properties of covalent solids even at low temperature and produces significant changes with increasing temperature and on melting.     

First principles study on Mn-doped LiFePO4 as cathode material for rechargeable lithium batteries

The electronic structure and diffusion energy barriers of Li ions in pure and Mn-doped LiFePO4 have been studied using density functional theory(DFT).The results demonstrate clearly that Fe-O covalent bond is weaker than P-O covalent bond.Pure LiFePO4 has band gap of 0.56 eV and diffusion energy barrier of 2.57 eV for Li ions,while the dopant has small band gap of 0.25 eV and low diffusion energy barrier of 2.31 eV,which indicates that the electronic and ionic conductivity of LiFePO4 have been improved owing to doping.     

Valence electronic structure of tantalum carbide and nitride

The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.     

Soft bond-deformation paths in superhard γ-boron

We report surprisingly soft covalent bond-deformation paths in recently discovered superhard γ-boron. First-principles calculations reveal an intriguing mechanism for bond transformation mediated by three-center bonding, which reduces considerably the rigidity and directionality of the two-center covalent bonds in γ-boron. It leads to much lower strength and large plastic deformation along the selected paths. These results establish a new type of bond-deformation pattern in γ-boron, which expands our knowledge about structural transformation in strong covalent solids.     

Hardness of covalent crystals

Based on the idea that the hardness of covalent crystal is intrinsic and equivalent to the sum of the resistance to the indenter of each bond per unit area, a semiempirical method for the evaluation of hardness of multicomponent crystals is presented. Applied to beta-BC2N crystal, the predicted value of hardness is in good agreement with the experimental value. It is found that bond density or electronic density, bond length, and degree of covalent bonding are three determinative factors for the hardness of a polar covalent crystal. Our method offers the advantage of applicability to a broad class of materials and initializes a link between macroscopic property and electronic structure from first principles calculation.     

Structure and chemical bond characteristics of LaB6

The structure and chemical bond characteristics of LaB₆ have been achieved by means of the density functional theory using the state-of-the-art full-potential linearized augmented plane wave (FPLAPW) method, which are implemented within the EXCITING code. The results show our optimized lattice constant a (4.158 Å), parameter z (0.1981) and bulk modulus B (170.4 GPa) are in good agreement with the corresponding experimental data. Electron localization function (ELF) shows the La–La bond mainly is ionic bond, La–B bond is between ionic and covalent bond while the covalent bond between the nearest neighbor B atoms (B2 and B3) is a little stronger than that between the nearer neighbor B atoms (B1 and B4).     

First-principles predictions on transition from tetrahedron to octahedron,electronic structures and elastic properties of InAs

In this work, the pressure induced phase transition of InAs is investigated by density functional theory. The first-order phase transition of InAs from zinc-blende (ZB) to the rocksalt (RS) structure occurs at 4.9 GPa accompanies by a 26% volume collapse. It is found that the nearest In and As atoms bonded as covalent bond, but there is no strong interaction between the nearest In–In or As–As atoms. Crystal space of ZB structure is occupied by tetrahedrons (4 In–As covalent bonds) partly with many interstice, and crystal space of RS is fulfilled by close-packed octahedrons (6 In–As covalent bonds). With increasing pressure, rebuild of covalent bond due to variations of electronic structure causes phase transition from ZB to RS structure. Furthermore, directional changes of covalent bond along [100] and [110] bring evident variation of shear on the {100} and {110} planes.