单晶LaB_6阴极材料典型晶面的电子结构和发射性能研究

单晶LaB_6是一种理想的热发射和场发射阴极材料,其不同晶面表现出不同的发射性能.采用基于密度泛函理论的第一性原理计算分析了LaB_6单晶的(100),(110),(111),(210),(211)和(310)典型晶面的差分电子密度、能带结构和态密度,并对光学区熔法制备的高质量单晶LaB_6的上述典型晶面的热发射性能进行了测试.理论计算结果表明LaB_6各晶面结构的不同和电子结构的差异导致LaB_6发射性能具有各向异性,晶面内La原子的密度越大、费米能级进入导带越深、费米能级附近态密度越大及其在导带区域的分布宽度越宽、导带在费米能级附近分布越多,晶面的逸出功越低,发射性能越好.热发射测试结果表明,当阴极测试温度为1773 K,测试电压为1 k V时,(100),(110),(111),(210),(211)和(310)晶面的最大发射电流密度分别为42.4,36.4,18.4,32.5,30.5和32.2 A/cm~2,其中(100)晶面具有最佳的发射性能.     

强磁场下Er2Ga5O12的磁晶各向异性

用量子理论定量计算了Er3Ga5O12在强磁场作用下,温度为42K,外磁场沿着[001],[100],[110]和[111]四个方向的磁化强度.可以看出,磁化强度随着外磁场呈很强的各向异性,而在低温弱磁场下,磁化强度和外磁场呈线性关系 关键词： 磁晶各向异性 磁化强度     

Pb液滴在Ni基底润湿铺展行为的分子动力学模拟

采用分子动力学方法研究了Pb液滴在Ni(100)晶面、(110)晶面和(111)晶面的铺展润湿行为. 结果表明: Pb液滴在Ni(100)及(111)基底上的润湿铺展现象呈各向同性, 而在Ni(110)基底上的润湿铺展现象呈明显的各向异性, 且这种各向异性源于Ni(110)晶面点阵结构上Pb原子沿不同晶向的扩散机制及速度的明显差异; Pb液滴在Ni(111)晶面上铺展时, 未发生表面合金化, 液滴铺展动力学描述近似满足 R² ∝ t, 而液滴在(100)晶面和(110)晶面上铺展时表面产生合金化现象, 铺展动力学关系近似满足 R⁴ ∝ t, 且液滴在(100)晶面上的铺展速度高于(110)晶面上的铺展速度. 关键词： 分子动力学 润湿各向异性 铺展膜 扩散机制     

具有不同交换偏置方向的外延FeGa/IrMn双层膜的磁各向异性与磁化翻转

采用磁控溅射方法在MgO(001)单晶衬底上制备了交换偏置分别沿着FeGa [100]和[110]方向的FeGa/IrMn外延交换偏置双层膜,研究了交换偏置取向对磁化翻转过程与磁化翻转场的影响.铁磁共振场的角度依赖关系的测量与拟合,表明样品存在不同取向的四重对称磁晶各向异性、单向交换磁各向异性和单轴磁各向异性的叠加.矢量磁光克尔效应测量表明交换偏置沿着[100]方向的样品在不同磁场方向下表现矩形、非对称和单边两步磁滞回线;交换偏置沿着[110]方向的样品在不同磁场方向下表现单边两步和双边两步磁滞回线.考虑不同交换偏置方向的畴壁形核和位移模型,能够很好地解释磁化翻转路径随磁场方向的变化规律和拟合磁化翻转场的角度依赖关系,表明交换偏置方向的改变使得畴壁形核能发生显著变化.     

潮湿空气对碘化铯薄膜结构和性质的影响

采用热蒸发法在普通载玻片上制备了碘化铯(CsI)多晶薄膜,采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、高阻仪、红外分光光度计研究了暴露于潮湿空气对CsI薄膜结构、电阻率及红外透过率的影响.SEM结果表明,薄膜中颗粒平均尺寸由0.36μm变为1.25μm.吸附水沿颗粒间界扩散,间界发生弯曲和移动,大颗粒吸收小颗粒质量长大.XRD分析表明,(110)晶面衍射峰强度增加,峰位向高角度移动,半高宽减少,薄膜张应力减小,趋于形成(110/220)织构,晶粒平均尺寸为25.6,28.4,45.1 nm.受潮后薄膜电阻率由1010?·cm量级减少为108?·cm量级.在3675—3750 cm-1和3560—3640 cm-1位置出现接近游离水而非液态水的红外吸收峰,观察到吸收峰的精细结构,峰分裂源于受离子偶极键影响的羟基与吸附水气液界面处悬键的伸缩振动.     

YIG单晶铁磁共振(FMR)

本文介绍了三厘米波段测量极窄铁磁共振线宽△H的实验装置。采用磁场定向方法给待测样品YIG单晶小球定出(110)晶面,除测△H及g因子外,还能测定磁晶各向异性常数K_1,并对实验结果进行了讨论。     

不同晶面的氢终端单晶金刚石场效应晶体管特性

通过微波等离子体化学气相淀积技术生长单晶金刚石并切割得到(110)和(111)晶面金刚石片,以同批器件工艺制备两种晶面上栅长为6μm的氢终端单晶金刚石场效应管,从材料和器件特性两方面对两种晶面金刚石进行对比分析.(110)面和(111)面金刚石的表面形貌在氢终端处理后显著不同,光学性质则彼此相似.VGS=–4 V时,(111)金刚石器件获得的最大饱和电流为80.41 m A/mm,约为(110)金刚石器件的1.4倍;其导通电阻为48.51 W·mm,只有(110)金刚石器件导通电阻的67%.通过对器件电容-电压特性曲线的分析得到,(111)金刚石器件沟道中最大载流子密度与(110)金刚石器件差异不大.分析认为,(111)金刚石器件获得更高饱和电流和更低导通电阻,应归因于较低的方阻.     

用铁磁共振方法同时测定单晶外延膜的K_u和K_1

本文导出了兼具沿晶面法向感生单轴各向异性(K)和立方磁晶各向异性(K_1)的任一晶面沿任一方向的薄膜共振场公式,从而提出了同时测定K和K_1的一种方法。以(111)晶面为例,给出了具体方法和实验结果。     

应变Si电子电导有效质量模型

采用K·P微扰法建立了应变Si导带能谷由纵、横向有效质量表征的E-k关系,并在此基础上,研究分析了(001),(101),(111)晶面应变Si电子的电导有效质量与应力、能谷分裂能及晶向的关系.结果表明,弛豫Si_1-xGe_x材料(001)面生长的应变Si沿[100],[010]晶向的电子电导有效质量和弛豫Si_1-xGe_x材料(101)面生长的应变Si 关键词： 应变Si K·P法 电导有效质量     

压强对GaSb/GaAs量子点形貌各向异性的影响

采用低压金属有机物化学气相沉积(LP-MOCVD)技术在Ga As(001)衬底上制备Ga Sb量子点,研究了反应室压强对改善Ga Sb/Ga As量子点形貌各向异性的影响。通过Sb表面处理方法,在Ga As衬底上形成低表面能的Sb-Sb浮层,实现以界面失配(IMF)生长模式对Ga Sb量子点诱导生长。用原子力显微镜(AFM)对各样品的量子点形貌进行了表征,结果表明Ga Sb量子点形貌各向异性明显且沿[110]方向拉长。在压强条件为10 k Pa时,IMF生长模式导致不对称岛的长宽比大于3,由于低能量(111)侧面的存在,Ga Sb量子点优先沿[110]方向生长而不是与之垂直的[110]方向。压强降低至4 k Pa时量子点密度增大为8. 3×109cm-2,量子点形貌转变为对称的半球形且长宽比约为1。低的压强降低了吸附原子的扩散激活能从而增大了扩散长度,可以有效改善Ga Sb量子点的各向异性。     

放电等离子烧结原位合成LaxCe1-xB6化合物及性能研究

以LaH₂, CeH₂纳米粉和无定形B粉为原料, 通过放电等离子烧结原位合成法制备了单相、高致密度的La_xCe_1-xB₆稀土六硼化物. 系统研究了该系列化合物的晶体结构、表面织构、力学性能、电输运特性及热发射性能. 结果表明, 该方法制备出的样品致密度均高于96%, 维氏硬度最高值达到2310 kg/mm², 说明具有良好的力学性能. 热发射结果表明, 当阴极温度为1873 K, 外加电压为1 kV时, La_0.6Ce_0.4B₆的最大发射电流密度达到40.7 A/cm², 该值高于单纯LaB₆和CeB₆电流密度值. 因此, La_xCe_1-xB₆多元稀土六硼化物作为热阴极材料将有良好的应用前景. 关键词： 稀土六硼化物 阴极材料 热电子发射     

电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

Study of field-induced explosive electron emission mechanisms ofpseudospark superemission cathodes

Various mechanisms of electron emission, including the field, field-enhanced thermionic, and explosive electron emissions from pseudospark cathodes, are discussed and compared. The mechanism of the field-induced explosive electron emission due to microstructure on the cathode surface is considered to be more likely the pseudospark superemissive mechanism. A high-mean electric field up to 3-5 MV/cm on the cathode surface in the end of hollow cathode phase is enough to initiate the mechanism. The cathode spot initiation delay time (<10 ns) and explosive emission threshold current (~10⁸ A/cm² ) prior to the high current conducting phase are given by solving the initial value problem of the one-dimensional heat conduction equation, thus explaining the existing experimental data of the pseudospark cathode superemission. In the case of multigap discharge, the above mechanism occurs on nearly all cathode and interelectrode surfaces. Experimental evidence in single- and multigap pseudospark discharges supports the suggested explanation     

Importance of high local cathode spot pressure on the attachment ofthermal arcs on cold cathodes

The importance of having high local cathode spot pressures for the self-sustaining operation of a thermal arc plasma on a cold cathode is theoretically investigated. Applying a cathode sheath model to a Cu cathode, it is shown that cathode spot plasma pressures ranging 7.4-9.2 atm and 34.2-50 atm for electron temperatures of ~1 eV are needed to account for current densities of 10⁹ and 10¹⁰ A·m^-2, respectively. The study of the different contributions from the ions, the emission electrons, and the back-diffusing plasma electrons to the total current and heat transfer to the cathode spot has allowed us to show the following. 1) Due to the high metallic plasma densities, a strong heating of the cathode occurs and an important surface electric field is established at the cathode surface causing strong thermo-field emission of electrons. 2) Due to the presence of a high density of ions in the cathode vicinity, an important fraction of the total current is carried by the ions and the electron emission is enhanced. 3) The total current is only slightly reduced by the presence of back-diffusing plasma electrons in the cathode sheath. For a current density j_tot=10⁹ A·m^-2 , the current to the cathode surface is mainly transported by the ions (76-91% of j_tot while for a current density j_tot = 10¹⁰ A·m^-2, the thermo-field electrons become the main current carriers (61-72% of j_tot). It is shown that the cathode spot plasma parameters are those of a high pressure metallic gas where deviations from the ideal gas law and important lowering of the ionization potentials are observed     

稀土硼化物LaxCe1-xB6亚微米粉的制备及光吸收研究

以稀土氧化物La₂O₃和CeO₂为稀土源, 以NaBH₄为硼源在真空环境中通过固相反应成功制备出了分散性好的单相三元La_xCe_1-xB₆亚微米粉. 系统研究了掺杂元素La对CeB₆物相, 微观结构及光吸收性能的影响. 实验结果表明, La元素的掺杂没有改变CeB₆的物相和晶体结构, 而是无序替代了Ce原子晶位. 光吸收结果表明, 随着La掺杂量的增加La_xCe_1-xB₆分散液吸收谷波长从620 nm减小到610 nm出现了蓝移现象.     

Active species in microwave postdischarge for steel-surfacenitriding

Production of nitrogen atoms has been studied in a 2.45-GHz flowing postdischarge in N₂ and N₂-H₂ gas mixtures with Ar as a buffer gas in the high-pressure regime (5×10³ to 6.5×10⁴ Pa). N atom densities have been measured by NO titration in the 10¹⁴-10 ¹⁵ cm³ range and monitored by the first positive emission resulting from the N atom recombination. The rate coefficient of the N+N+N₂ recombination has been found to be _k=6×10^-33 cm⁶ atom^-2 s ^-1 at T₀=300 K, which agrees with previously published data. The N atom production (or degree of N/N₂ dissociation) in front of an Fe-0.1%C substrate correlates well with the thickness of a γ' Fe₄N layer produced by the postdischarge treatment. The H₂ gas was first introduced in the initial phase of treatment to remove surface oxidizing and then was cut off to keep high densities of N atoms. It is deduced that N atoms are more active nitriding species than NH-type radicals     

铌镁酸铅-钛酸铅铁电阴极电子发射特性

研究了铌镁酸铅-钛酸铅铁电材料的铁电、介电性能对阴极发射阈值电压的影响, 以及铁电阴极发射电流与激励脉冲电压和抽取电压之间的关系, 并分析了其发射机理. 结果表明, 室温介电常数高、极化强度变化量大的弛豫铁电体0.9Pb(Mg_1/3Nb_2/3)O₃-0.1PbTiO₃具有较小的发射阈值电压; 铁电阴极电子发射与快极化反转和等离子体的形成有关; 由极化反转所致电子发射的自发射电流随激励脉冲电压的增大呈幂律增长关系, 其发射电流开始于激励脉冲电压的下降沿; 在抽取电压较大时, 发射电流随抽取电压的增大呈线性增长关系, 说明大电流主要取决于抽取电压; 其发射电流开始于激励脉冲电压的上升沿, 与“三介点”处的场增强效应和等离子体的形成有关; 当抽取电压为2500 V 时, 得到的发射电流幅值为210 A, 相应的电流密度为447 A/cm².     

Dielectrics for passivation of planar InP/InGaAs diodes

We have investigated dielectrics for passivating planar InP or InGaAs photodiodes: thermally evaporated Al₂O₃ and SiO, sputtered Si₃N₄ and SiO₂ and also SiO₂ using chemical vapour deposition. The measured bulk and field-effect properties of all dielectrics excluding sputtered SiO₂ were suitable for this application. In planar InGaAs diodes with Cd diffused or Mg implanted p⁺-region a disordered dielectric/semiconductor surface led to high reverse current densities above 1 mA/cm². In InP diodes with p⁺-diffusion and dielectrics exhibiting positive flatband voltages, e.g. Si₃N₄ and Al₂O₃, reverse current densities of 10 μA/cm² were measured probably caused by a slight inversion of the semiconductor surface. With a SiO or CVD-SiO₂ passivating layer on n-InP lowest leakage current densities (10 nA/cm²) were achieved. Very low dark-current planar photodiodes InP/InGaAsP/InGaAs have been fabricated using SiO passivation (30 nA/cm²).     

Measurements of vacuum field emission from bio-molecular andsemiconductor-metal eutectic composite microstructures

Designs, calculations, and initial data are presented from a program investigating the use of biomolecular and eutectic composite microstructures as vacuum field-emission cathodes. Calculations, supported by the initial data, indicate that these electron sources should be capable of macroscopic beam current densities, J⩾100 A/cm², without the formation of a surface plasma. The absence of a plasma allows these cathodes to operate as a long-pulse to DC electron sources. The designs avoid the formation of surface plasma by forcing the current emitted from the tips to transit a thin layer of silicon. The natural high-field current-limiting nature of the silicon serves to prevent the ablation of tip structures and the subsequent formation of cathode plasma. Initial data obtained with these microstructures has demonstrated Fowler-Nordheim characteristic emission. Coated bio-molecular composite cathodes have demonstrated stable DC current densities of ~100 mA/cm², and the eutectic composite cathodes have demonstrated similarly stable DC current densities of ~1 A/cm²