纤锌矿型量子级联激光器的界面与受限声子比较

利用传输矩阵方法对纤锌矿型量子级联激光器有源区的界面与受限声子进行了研究.计算结果显示:在纵光学频域有一组界面声子与二组受限声子存在,而且最低频率的两个界面声子在一定条件下能转变为受限模式.通过比较界面声子与受限声子的色散及声子势发现两者有很大不同,且计算电声散射速率可以发现由这两种声子引起的散射率是可比拟的.     

硅纳米线晶格热导率的理论分析

考虑空间尺度对声子群速度的影响,采用Callaway热导率模型计算了单晶硅纳米线的晶格热导率,讨论了三声子Umklapp过程、电子-声子散射、缺陷-声子散射以及边界-声子散射对热导率的影响.结果表明,纳米线的热导率比体材料小一个数量级,与不考虑受限声子群速度的结果相比,和实验符合得更好.另外,边界散射使得高温区的热导率体现出与温度几乎无关的特性.     

基于纳米点嵌入的界面导热性能优化

调节界面热导(ITC)是纳米电子器件热管理的关键任务.本文采用非平衡态分子动力学方法研究了在界面处嵌入锡(Sn)纳米点对硅锗(Si/Ge) ITC的影响.研究发现,在声子弹性和非弹性两种竞争机制下ITC随Sn纳米点的数量的增加先升后降,在嵌入4个Sn纳米点时达到顶峰,ITC是完美界面(无纳米点嵌入)时的1.92倍.通过计算声子透射函数和态密度可以知道,ITC增加的原因是声子的非弹性散射得到加强,增强的非弹性声子散射为界面声子输运打开了新的通道.随着纳米点数量增加到一定值时,声子的弹性散射逐渐占据主导地位,ITC开始降低.     

纤锌矿氮化镓基阶梯量子阱中界面声子的色散谱与散射率

本文理论分析了纤锌矿GaN-基阶梯量子阱中的电子-界面光学声子散射性质。阶梯量子阱中的解析的界面声子态及Frhlich电子-声子相互作用哈密顿被导出了。在考虑强内建电场效应及能带的非抛物性特性的情况下,阶梯量子阱结构精确解析的电子本征态也被给出了。以一个四层纤锌矿AlN-基阶梯量子阱为例进行了数值计算。结果发现,系统中存在四支界面光学声子模,这一观察明显不同于对称的GaN/AlN单量子阱与双量子阱的情况。这一差异被归结为阶梯量子结构的非对称性。GaN-基阶梯量子阱中的子带内散射率与子带间散射率比GaAs-基阶梯量子阱的结果大一个数量级,这被归因于GaN-基晶体大的电子-声子耦合常数。GaN-基阶梯量子阱的子带内散射率表现出与GaAs-基体系类似的结构参数依赖关系,但两类体系的子带间散射率对阶梯量子阱结构参数依赖则明显不同,这被归结为GaN-基阶梯量子阱结构中强的内建电场效应及带的非抛物性。结果还表明,高频界面声子模相对于低频界面声子模,对散射率的贡献更大。     

表面低配位原子对声子的散射机制

由于纳米结构具有极高的表体比,声子-表面散射机制对声子的热输运性质起到关键作用.提出了表面低配位原子对声子的散射机制,并且结合量子微扰理论与键序理论推导出该机制的散射率.由于散射率正比于材料的表体比,这种散射机制对声子输运的重要性随着纳米结构尺寸的减小而增大.散射率正比于声子频率的4次方,所以这种散射机制对高频声子的作用远远强于对低频声子的作用.基于声子玻尔兹曼输运方程,计算了硅纳米薄膜和硅纳米线的热导率,发现本文模型比传统的声子-边界散射模型更接近实验值.此发现不仅有助于理解声子-表面散射的物理机制,也有助于应用声子表面工程调控纳米结构的热输运性质.     

InGaN插入层对AlGaN/GaN界面电子散射的影响

本文研究InGaN作为AlGaN/GaN插入层引起的电子输运性质的变化,考虑了AlGaN和InGaN势垒层的自发极化与压电极化对Al_xGa_(1–x)N/In_yGa_(1–y)N/GaN双异质结高电子迁移率晶体管中极化电荷面密度、二维电子气(2DEG)浓度的影响,理论分析了不同In摩尔组分下, InGaN厚度与界面粗糙度散射、随机偶极散射和极性光学声子散射之间的关系.计算结果表明:界面粗糙度散射和随机偶极散射对双异质结Al_xGa_(1–x)N/In_yGa_(1–y)N/GaN的电子输运性质有重要影响,极性光学声子散射对其影响最弱; 2DEG浓度、界面粗糙度散射、随机偶极散射和极性光学声子散射的强弱由InGaN势垒层厚度和In摩尔组分共同决定.     

六角形散射子光子晶体的界面态

研究采用平面波展开加超元胞方法计算了正方格子六角形空气散射子二维光子晶体镜面对称异质结的界面态.经过研究发现,这种异质结界面态可以通过相对于界面横向拉开或者纵向错开而产生,并且调节到绝对带隙中成为传导模.界面态的个数和变化规律在很大程度上依赖于光子晶体异质结构的几何和物理参量.通过对比我们发现：与圆柱形散射子相比,在六角形散射子异质结中更易于产生传导模,但是比四方柱形散射子的情况要困难.     

纳米陶瓷中限域效应与界面效应对热电性能影响的理论研究

采用玻尓兹曼输运方程与密度泛函计算相结合的方法, 理论研究了限域效应与界面效应对SrTiO₃纳米陶瓷热电性能的影响. 理论计算的结果表明, 室温下纳米陶瓷的热电优值较单晶有了大幅度提高, 可达到0.8. 热电优值的提高主要来源于晶粒内的声子限域效应与电子在晶界处的界面能量过滤效应, 电子的限域效应与声子的界面散射效应起到了辅助作用. 本文结论也可推广至其他材料, 因此对高性能热电纳米陶瓷的设计将起到积极的作用.     

AlGaN/GaN高电子迁移率晶体管中二维电子气的极化光学声子散射

Al Ga N/Ga N界面处的二维电子气迁移率是描述高电子迁移率晶体管特性的一个重要参数,极化光学声子散射是高温时限制二维电子气迁移率的主要散射机制.本文对极化光学声子散射进行计算,结果表明在二维电子气浓度为6×10~(11)—1×10~(13) cm~(–2),温度为200—400 K范围内,极化光学声子散射因素决定的迁移率随温度的变化近似为μPO=AT-α(α=3.5);由于Ga N中光学声子能量较大,吸收声子对迁移率的影响远大于发射声子的影响.进一步讨论了极化光学声子散射因素决定的迁移率随光学声子能量变化的趋势,表明增加极化光学声子能量可提高二维电子气的室温迁移率.     

带孔硅纳米薄膜热整流及声子散射特性研究

本文基于非平衡的分子动力学模拟方法计算了带有三角形孔的硅纳米薄膜的界面热阻特性,结果表明300-1100 K范围内随着热流方向的改变,在含有三角形孔的硅纳米薄膜中存在热整流效应,热整流系数达28％.同时借助于声子波包动力学模拟方法,获得了不同频率下的纵波声子在三角形孔处的散射特性,结果表明纵波声子在散射过程中产生了横波声子,并且从三角形底部向顶部入射的声子能量透射系数比反向时平均低22％.不对称结构引起的声子透射率的差异是引起热整流效应的主要因素.     

ZnSe—ZnTe应变层超晶格的纵光学声子模

本文首次利用室温非共振喇曼后向散射测得具有7.3％晶格失配的ZnSe-ZnTe应变层超晶格限制在ZnSe层中的纵光学声子模。计算了限制效应引起的声子模频率的红移,以及弹性应变引起的声子模的移动,它比前者大得多。ZnSe层所受拉伸应变引起声子频率红移,ZnTe层所受压缩应变引起声子频率蓝移。同时在喇曼光谱中观察到由于这种效应导致出现的纵光学声子折叠模。     

Stoneley waves in three-layered cylindrical solid media

This paper considers the propagation of Stoneley modes along the interfaces of three-layered concentric cylindrical solid media in order to assist in the design of ultrasonic transmission rods. The phase velocity dispersion curves and amplitude distributions are numerically analyzed. The modes are analogous to non-dispersive Stoneley waves and are confined to the vicinities of the two interfaces at high frequency. A key finding is that the peak amplitude location for each mode transfers between the two interfaces as a function of frequency. A simplified model is introduced, giving the peak amplitude locations of each mode in different frequency ranges efficiently.     

Vibration Spectrums of Polar Interface Optical Phonons in GaAs/AlAs Cylindrical Quantum Dots

The dispersions of the top interface optical phonons and the side interface optical phonons in cylindrical quantum dots are solved by using the dielectric continuum model. Our calculation mainly focuses on the frequency dependence of the IO phonon modes on the wave-vector and quantum number in the cylindrical quantum dot system. Results reveal that the frequency of top interface optical phonon sensitively depends on the discrete wave-vector in z direction and the azimuthal quantum number, while that of the side interface optical phonon mode depends on the radial and azimuthal quantum numbers. These features are obviously different from those in quantum well, quantum well wire, and spherical quantum dot systems. The limited frequencies of interface optical modes for the large wave-vector or quantum number approach two certain constant values, and the math and physical reasons for this feature have been explained reasonably.     

X-Ray waveguiding studies of ordering phenomena in confined fluids

We have determined the structure of a colloidal fluid confined in a gap between two walls by making use of the waveguiding properties of the gap at x-ray wavelengths. The method is based on an analysis of the coupling of waveguide modes induced by the density variations in the confined fluid. Studies on suspensions confined within gaps of a few hundred nanometers showed strongly selective mode coupling effects, indicative of an ordering of the colloidal particles in layers parallel to the confining walls.     

Brillouin-zone mapping of the spin waves in a ferromagnetic bilayer system

The eigenproblems of spin waves in a heterogeneous ferromagnetic bilayer system with periodic boundary conditions are solved using the interface-rescaling approach. Brillouin zone mapping and the eigenmodes of the system are investigated. We find three types of spin waves may exist in the system: the bulk mode, the interface mode, and the perfect confined mode. The fine structure of the energy band in the heterogeneous bilayer system is first given for the whole two-dimensional Brillouin zone. Conditions for the existence of the interface mode are discussed. Finally, we analyze the resonant-confined spin waves in bulk modes and their oscillating behavior.     

Collective properties of water confined in carbon nanotubes: A computer simulation study

The collective properties of water confined in the (10,10), (8,8) and (6,6) carbon nanotubes are studied by analysing the longitudinal-current autocorrelation function, calculated from computer-simulated trajectories. The corresponding spectra clearly show the presence of two excitations, but their behaviour is quite different from that observed in the case of bulk water. Instead of the strong positive dispersion of the hydrodynamic sound mode characteristic of bulk water (the fast-sound phenomenon), the sound dispersion relation of confined water is observed to flatten into a non-propagating mode, while a second excitation appears at a higher frequency. This behaviour is analysed in terms of the localized oscillation modes of the hydrogen-bond network.     

光回馈Nd:YAG激光器中的多模跳变现象

研究了Nd:YAG激光器中光回馈引起的多模跳变现象.光回馈调制了激光器不同纵模的阈值增益，阈值增益最低的纵模获得振荡.在外腔调谐过程中，当振荡模式的阈值增益高于相邻模式的阈值增益时产生模跳变，光强调制曲线出现相应的波动.各跳变纵模在增益曲线上的位置不同，导致模跳变点位置不同，相应的光强调制曲线也不同.越靠近中心频率的纵模，其光强信号峰值越大，该纵模持续振荡时间也就越长.当两跳变纵模关于中心频率对称时，其光强信号峰值相等，纵模持续振荡时间也相等. 关键词： 自混合干涉 模跳变 光回馈 阈值增益     

三层单负材料结构中电磁波模分析

本文分析了由负介电常数材料和负磁导率材料交替排列组成的一维三层结构中的电磁波模式,包括传播模及波导模.传播模对应于入射的行波模,着重研究了发生共振隧穿时场分布和透射谱随入射角度的变化关系,发现改变结构参数时共振隧穿频率会劈裂成两个,且这两个隧穿模的频率间距随着中间层厚度的减小而逐渐加大.波导模是指在结构两边的半无限真空中以倏逝场形式存在的电磁模式,分析了它的存在条件即色散关系,发现这种模在材料的交界面处会出现较强的局域场. 关键词： 单负材料 共振隧穿 传播模 波导模     

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Under dielectric continuum approximation, interface optical (IO) and surface optical (SO) phonon modes as well as the corresponding Fro^ehlich electron-phonon interaction Hamiltonian in a free-standing cylindrical quantum-well wire (QWW) are derived and studied. Numerical calculations on GaAs/AlzGa1-x As cylindrical QWW are performed. Results reveal that there are two branches of IO phonon modes and one branch of SO phonon mode, and the dispersion frequencies of IO or SO phonon modes sensitively depend on the Al mole fraction x in AlzGa1-x As material and the wavevector in z direction, kz. With the increasing of kz and quantum number m, the frequency of each IO mode approaches one of the two frequency values of the single GaAs/AlxGa1-x As heterostructure, and the electrostatic potential distribution of the phonon mode tends to be more and more localized at a certain interface or surface, meanwhile, the coupling between the electron-IO and -SO phonons becomes weaker.