添加CaSO4·2H2O为晶种制备磷石膏半水硫酸钙晶须

以固体废弃物磷石膏为原料,在传统常压醇水热法的基础上添加CaSO₄·2H₂O为晶种制备半水硫酸钙晶须。采用单因素试验法探究了晶种含量、丙三醇含量和磷石膏质量分数对晶须结构和形貌的影响,确定晶须的最佳制备工艺条件。采用SEM和XRD对样品进行表征分析,实验结果表明:添加CaSO₄·2H₂O晶种制备晶须的长径比(49.29)比只添加丙三醇的样品的长径比(30.99)提高了近60%;当丙三醇与水的体积比(V)为1、晶种含量为1%、磷石膏质量分数为5%时制备的晶须的平均直径为0.65 μm,长径比达到了62.15,晶须的尺寸均匀。这说明添加1%CaSO₄·2H₂O晶种、V为1的丙三醇和质量分数为5%的磷石膏在常压下能制备出高长径比和尺寸均匀的半水硫酸钙晶须。     

磷石膏蒸压制备半水硫酸钙晶须

以磷石膏为原料,利用蒸压法制备半水硫酸钙晶须.采用均匀设计实验的基础上,进一步考察了料浆固液比、反应时间、蒸压压力对产品长径比的影响,并借助透射偏光显微镜、X射线衍射仪(XRD)等仪器对产品进行表征.结果表明,最佳反应条件:料浆固液比0.15 g· mL-1、反应时间0.5h、蒸压的压力0.3 MPa,在此条件下制备出了长径比99.07、晶须直径约1μm、纯度高、结晶良好的晶须产品.并从微观形貌、晶体结构、物相分析三个方面阐明了半水硫酸钙晶须生长规律.本研究对磷石膏的高值化利用具有指导意义.     

聚丙烯酰胺/硬脂酸协同改性半水硫酸钙晶须及其形貌稳定性研究

使用聚丙烯酰胺/硬脂酸改性体系对半水硫酸钙晶须进行表面改性,研究聚丙烯酰胺的加入对改性过程中硫酸钙晶须的稳定化影响.通过显微镜观察晶须产品的形貌,利用X射线衍射仪分析其相组成,利用傅里叶红外光谱仪检测晶须产品的表面基团.结果 表明:聚丙烯酰胺/硬脂酸协同改性硫酸钙晶须的晶体形貌及相组成未发生改变,较硬脂酸单一改性后的晶须长径比有所上升,且在水溶液中形貌保持时间延长,改性后晶须的活化指数、接触角较硬脂酸单一改性有明显上升,实现了硫酸钙晶须改性过程中的稳定化处理.     

制备方法与Ce3+对二水硫酸钙晶须形貌的影响

本文以稀土石膏为原材料研究了制备方法对硫酸钙晶须(CSW)形貌和结构的影响，并以二水硫酸钙(分析纯)为原材料，CeCl₃·7H₂O为铈源，探究稀土铈的加入对CSW的结构和形貌的影响。利用SEM、XRD、XPS和FL等表征手段对CSW的结构、形貌和组成及其荧光性能等进行表征和分析。研究结果表明：采用微波法可以制备高长径比的CSW,其平均长度为263μm,平均长径比为39.50。Ce³⁺以原子置换的形式进入CSW,对晶须的晶体结构不产生影响，但改善了CSW的形貌。添加2%(质量分数)的Ce³⁺能够促进晶须向一维生长，使得CSW的长径比显著增加，而过量的Ce³⁺会促使晶须横向生长。研究证明稀土石膏中含有微量的稀土元素Ce,同时发现由稀土石膏制备的CSW具有发射蓝光的特性，这对开发利用稀土石膏具有重要的理论指导意义。     

磷石膏常压酸化法制备无水硫酸钙晶须的实验研究

以磷石膏为原料,一步常压酸化法制备无水硫酸钙晶须.采用单因素实验方法研究了盐酸浓度、反应温度、反应时间和固液比4个因素对制备硫酸钙晶须的影响.采用X射线衍射(XRD)、扫描电子显微镜(SEM)对反应产物样品的物相、微观形貌进行了表征.结果 表明:在盐酸浓度为5 mol/L、反应温度为90℃、反应时间为3h和固液比为0.10g/mL的条件下,一步法制备出了直径为1～4μm、长径比为3～8的无水硫酸钙晶须.分析认为,无水硫酸钙晶须是在二水硫酸钙溶解量达到其过饱和度后从溶液中结晶形成的.     

机械力活化对脱硫石膏制备硫酸钙晶须的影响

对脱硫石膏原料进行机械力活化,然后采用降温重结晶法制备出硫酸钙晶须.借助扫描电镜、图像粒度分析仪和相关软件进行表征,并初步讨论了机械力活化对晶须成核和生长过程的影响.结果表明:经过机械力活化的脱硫石膏可以制备有较大长径比的硫酸钙晶须.在水浴反应温度为75℃,硫酸浓度为2.5 mol/L,机械力活化时间为3.5 h,浆料浓度为2;的条件下,制备的硫酸钙晶须平均长径比为150,平均直径为2.1μm.     

一步水热法制备无水硫酸钙晶须

以生石膏为原料,六水氯化镁为形貌控制剂,采用水热法一步合成了无水硫酸钙晶须.借助SEM、TEM、XRD和XPS等测试手段考察了水热条件对无水硫酸钙晶须的影响,研究了无水硫酸钙晶须的生长过程.结果表明:镁/钙摩尔比n(MgCl2·6H2O)/n(CaSO4· 2H2O)=2.5,反应温度180℃,反应时间2h,可生长出长度为20 ～ 40 μm,直径0.5～2 μm的无水硫酸钙晶须.无水硫酸钙晶须生长过程为:片状CaSO4·2H2O-纤维状CaSO4·0.5H2O-纤维状CaSO4.     

脱硫石膏重结晶法制备硫酸钙晶须及其除砷性能初探

以电厂脱硫石膏为原料,利用重结晶原理制备二水硫酸钙晶须.考察了溶液过饱和度、硫酸浓度、陈化温度/时间以及降温速率对晶须生长特性的影响,并初步研究了硫酸钙晶须对含砷水溶液的除砷性能.结果表明:所研究的操作条件对晶须形貌、尺寸均有一定影响.在H2SO4溶液重结晶体系中,控制硫酸钙过饱和度为0.5、陈化温度为20℃、陈化时间为3h并采用自然降温时,制备的二水硫酸钙晶须结晶度较好、形貌尺寸均匀,长径比为50～200.该二水硫酸钙晶须在pH为12时,能将初始浓度低于1 mg/L的含砷水溶液净化至满足地表水标准(0.05mg/L),展示了其在砷污染水体净化方面的应用潜力,可配合石灰-硫酸亚铁两段法除砷,降低废水处理成本.     

氢氧化镁晶须的制备及其生长机理探讨

以Mgcl2和NaOH为原料,采用直接沉淀法制备氢氧化镁晶须.研究了添加不同晶控剂对氢氧化镁晶须生成的影响,同时对添加硬脂酸锌制备氢氧化镁晶须的工艺进行研究.采用扫描电子显微镜和粒度分析仪对产品进行表征.结果表明,硬脂酸锌和氯化铁对氢氧化镁晶须的生成具有导晶作用;所得产品为长径比10.7的氢氧化镁晶须.采用负离子配位多面体生长基元理论可以有效地解释氢氧化镁晶须的生成.     

基于响应面法的半水硫酸钙晶须制备工艺优化

本研究以氯化钙、硫酸为主要原料,采用常压酸化法制备半水硫酸钙晶须.以长径比、长度为主要指标,在单因素实验的基础上,运用响应面法中的Box-Behnken design对反应温度、硫酸浓度、反应时间、搅拌速度进行优化,建立半水硫酸钙晶须制备工艺的数学模型,研究制备的最优工艺条件.结果表明,制备半水硫酸钙晶须的最优工艺条件为:反应温度103℃、硫酸浓度7.4;、反应时间60 min、搅拌速度288 r·min-,得到的晶须样品形貌规整、均一,平均长径比为82.2,φ90为53.3,平均长度为562 μm.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Mechanism of thermal expansion of structural modifications of zinc pyrovanadate

Crystal chemical characteristics of the α and β modifications of Zn₂V₂O₇ are calculated based on in situ high-temperature X-ray measurements. The expansion of the structure is found to be strongly anisotropic up to the negative volumetric thermal expansion of the α-Zn₂V₂O₇ unit cell in the temperature range of 300–600°С, α _V =–17.94 × 10^–6 1/K. The transformations of the “hard” and “soft” sublattices with an increase temperature and at the phase transition are considered in detail. It is shown that the negative volumetric thermal expansion of α-Zn₂V₂O₇ is due to the degeneracy of the zigzag-like shape of zinc–oxygen columns at constant distances between their vertices.