载流子色散型硅基CMOS光子器件

为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18 dB,1×2光开关消光比约21 dB,谐振环的消光比8～12 dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.     

载流子色散型硅基CMOS光子器件

为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18 dB,1×2光开关消光比约21 dB,谐振环的消光比8～12 dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.     

Practical mm-Wave pHEMT Frequency Multiplier

Details on a broadband MMIC frequency doubler targeting the MVDS market are presented. The design evolution from an individual pHEMT device to the complete practical doubler realisation is discussed. The doubler MMIC, which has been fabricated using the GMMT H40 GaAs process, has been evaluated in a customised package. An output power of +10 dBm at 40 GHz has been achieved with an associated conversion gain of 1.5 dB. The measured and predicted performance responses are compared. This chip is ideally suited to use in a number of emerging mm-wave applications.     

A high efficiency 46 to 92 GHz all microstrip frequency doubler

Using packaged GaAs varactor diodes, a high efficiency 46 to 92 GHz frequency doubler has been developed. Microstrip circuits have been used to match the input and output impedances presented by the diode. A conversion loss of 8 to 10 dB was measured. This doubler circuit is useful for W-band (75 to 110 GHz) integrated circuit receivers and transceivers. The use of microstrip circuit can drastically reduce the fabrication cost in addition to size and weight.     

基于毫米级单晶石墨烯的倍频器性能研究

石墨烯作为一种拥有高电子迁移率和高饱和速度的二维材料,在射频电子学领域具有很大的应用潜力,引起了人们广泛的研究兴趣.近些年随着化学气相沉积制备石墨烯技术的发展,高质量大尺寸的单晶石墨烯生长技术也愈加成熟.本文基于化学气相沉积生长的毫米级单晶石墨烯,在高介电常数介质上制备出高性能的石墨烯倍频器,并且对其倍频特性做了系统的研究.研究结果表明:在输入信号频率为1 GHz时,倍频增益可以达到-23.4 dB,频谱纯度可以达到94%.研究了不同漏极偏压以及输入信号功率下倍频增益的变化特性,随着漏极偏压以及输入信号功率的增加,倍频增益增加.对具有不同跨导和电子空穴电导对称性的器件的倍频增益和频谱纯度随输入信号频率f_(in)的变化关系进行了研究.结果表明,跨导对于倍频增益影响显著,在f_(in)=1 GHz时器件的频谱纯度差别不大,均大于90%,但是随着f_(in)增加至4 GHz,电子空穴电导对称性较差的器件频谱纯度下降至42%,电子空穴电导对称性较好的器件仍能保持85%的频谱纯度.这是电子空穴电导对称性和电子空穴响应速度共同作用的结果.本文的研究结果对于高性能石墨烯倍频器设计具有一定的指导意义.     

Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature

A detailed analysis of nonlinear effects-electron switching and rectification, in InAlAs/InGaAs based Y-branch junction (YBJ) devices is presented to investigate the potential of YBJ for high frequency applications at 300 K. Results based on semi-classical simulations yield good qualitative agreement with measurements and previously reported theoretical and experimental results. The nonlinear parabolic behaviour of our device is attributed to device geometry and space charge effects. RF analysis shows that the YBJ has tremendous intrinsic potential to function as a frequency doubler and microwave rectifier when operated in the parabolic regime. The present analysis serves as a tool to optimize the bias conditions for RF measurements and to estimate the effect of interconnects and parasitic elements on the RF performance of real devices.     

Simultaneous experimental generation of vacuum squeezing and bright amplitude squeezing from a frequency doubler

Both vacuum-squeezed and bright amplitude-squeezed states of light are experimentally generated from a frequency doubler with a semimonolithic Fabry-Perot configuration consisting of a type II nonlinear crystal and a concave mirror. Vacuum squeezing of 3.2 +/- 0.1 dB and amplitude squeezing of 1.3 +/- 0.2 dB are obtained simultaneously at a pump power of 8 mW. The two quadrature-squeezed optical fields that are generated are of identical frequency at 1080-nm wavelength and orthogonal polarization. Optimizing the input pump power by 19 mW yields as much as 5.0 +/- 0.2 dB of maximum vacuum squeezing. The advantages of the system are its simplicity and multiple utility.     

Design of W-Band Tripler

This paper describes a high performance W-band tripler with a novel structure. Input frequency is 25-36.7 GHz, output frequency 75-110 GHz, input power is 20dBm and conversion loss 16 dB. It can extend microwave signal to W-band (adding in Ka-band doubler). In the design, we give some approaches to achieve high band performances.     

HIGH CONVERSION EFFICIENCY TANDEM KTP FREQUENCY DOUBLER

The two-piece tandem KTP frequency doubler with mutually perpendi-oular KZ planes has been studied both theoretically and experimentally.Its conversionefficiency of second harmonic generation(SHG)exceeds 80% and the dynamic range ismuch greater than that of monolithic KTP doubler at the laser power used in theexperiments.The experimental result shows that this doubler has excellent performancesand the second harmonic beam is elliptically polarized.     

Generation of a squeezed vacuum resonant on a rubidium D1 line with periodically poled KTiOPO4

We report the generation of a continuous-wave squeezed vacuum resonant on the Rb D1 line (795 nm) using periodically poled KTiOPO4 (PPKTP) crystals. With a frequency doubler and an optical parametric oscillator based on PPKTP crystals, we observed a squeezing level of -2.75+/-0.14 dB and an antisqueezing level of +7.00+/-0.13 dB. This system could be utilized for demonstrating storage and retrieval of the squeezed vacuum, which is important for the ultraprecise measurement of atomic spins as well as quantum information processing.     

CMOS反相器的电磁干扰频率效应

利用自主开发的2维半导体器件-电路联合仿真器,研究了CMOS反相器在1 MHz～20 GHz电磁干扰作用下的响应。仿真结果表明:低频电磁干扰通过控制CMOS反相器中MOS管的导通、截止影响CMOS反相器的正常工作;高频电磁干扰通过MOS管中的本征电容耦合到输出端,干扰CMOS反相器的工作状态;CMOS反相器对于电磁干扰的敏感度随着干扰频率上升而不断降低。     

不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法

基于建立的不同工艺尺寸的CMOS器件模型,利用TCAD器件模拟的方法,针对不同工艺CMOS器件,开展了不同工艺尺寸CMOS器件单粒子闩锁效应(SEL)的研究。研究表明,器件工艺尺寸越大,SEL效应越敏感。结合单粒子闩锁效应触发机制,提出了保护带、保护环两种器件级抗SEL加固设计方法,并通过TCAD仿真和重离子试验验证防护效果,得出最优的加固防护设计。结果表明,90nm和0.13μm CMOS器件尽量选用保护带抗SEL结构,0.18μm或更大工艺尺寸CMOS器件建议选取保护环抗SEL结构。     

用外腔谐振倍频产生明亮绿光振幅压缩态光场

用1080nm激光抽运由α-切割Ⅱ类位相匹配KTP晶体和一个凹面镜组成的半整块驻波倍频腔，腔内的两个亚谐波模共振、谐波模近共振，在1080 nm抽运光功率为50mW时，获得了实测3.1±0.2 dB(～51%)的540nm波长明亮振幅压缩光. 关键词： 外腔谐振倍频 Ⅱ 类位相匹配 明亮振幅压缩光     

Optical characterization methods for solid-state image sensors

The accurate measurement of the optoelectronic properties of imaging sensors is of utmost importance for their appropriate use in various modern application fields, such as in metrology, quality control, environmental monitoring, medicine or for automotive applications. Key sensor parameters include spatial resolution, uniformity, sensitivity, linearity, signal to noise ratio and dynamic range. Today high-end optical systems mostly rely on charge coupled device (CCD) image sensors. Continuous progresses in CMOS submicron technology and the advent of ‘active pixel sensor’ (APS) imagers have however led to a wealth of novel line and area array imaging devices with added functionalities (eg. on-chip control and read-out electronics) or performance optimized for specific tasks (eg. a dynamic range in excess of 120 dB). The optimal use of CMOS image sensing technology nevertheless depends strongly on the absolute and accurate optoelectronic characterization of these devices. Modern measurement techniques for a reliable, traceable, precise and absolute measurement of the most relevant parameters of CCD and CMOS imaging sensors are described and discussed in the present paper, with examples based on recent state-of-the art CMOS imagers.     

可调谐掺钛蓝宝石激光器的一种新型倍频器

介绍掺钛蓝宝石激光器的一种新的倍频系统,利用色散棱镜对把不同频率的激光从窨色散开,然后利用透镜使这些光从不同方向入射到ＢＢＯ晶体上,这些方向恰 好是这些光的ＢＢＯ晶体上的相位匹配角,从而不需倍频晶体在掺钛蓝宝石激光器的可调谐范围内均实现角度相位匹配。     

Engineering two-dimensional nonlinear photonic quasi-crystals

A known algorithm for modeling quasi-periodic lattices is used to generate two-dimensional quadratic nonlinear photonic quasi-crystals containing a set of desired discrete spectral components. This allows us to fabricate optical devices in which an arbitrary set of nonlinear optical processes can be efficient. We demonstrate this capability by fabricating two devices: a multidirectional single-frequency doubler and a multidirectional, multifrequency doubler that is capable of nearly collinear doubling of cw radiation in the optical communication C band (1530-1570 nm) through angle tuning.     

A right cut method of Brewster angle to reduce the reflection of laser frequency doubler

The ordinary method to cut two light pass surfaces of an optical device in Brewster angle parallelly cannot reduce the harmonic's reflective losses of a laser frequency doubler. Right cut method with two unparallel light pass surfaces of Brewster angle of a laser frequency doubler, and preliminary experiment to demonstrate the usefulness of the technique are given.     

3 dB桥误差对能量倍增器性能的影响

根据能量倍增器的工作原理,对3 dB桥误差引起的能量倍增器性能变化进行了理论分析,并对BEPC和BEPCⅡ直线加速器所使用能量倍增器的3 dB桥误差进行了讨论,为判断焊接后3 dB桥桥臂波导变形提供了理论参考。结果表明:无论是功率分配不平衡,还是相位关系偏离,都会使部分功率反射回速调管。功率分配不平衡和微波相位关系偏离值越大,则功率倍增因子下降得越多。     

A frequency doubler for 200 GHz with a planar Schottky varactor

A frequency doubler for 200 GHz utilising a planar surface channel Schottky varactor was designed, constructed and tested. The doubler employes novel split-waveguide mount design with two sliding backshorts at both input and output waveguides. The theoretical maximum efficiency of the doubler is 44.0 % with input power level of 32 mW and the maximum output power is 16.5 mW with input power level of 50 mW. The measured maximum efficiency of the doubler was 7.1 % and the maximum output power was 2.6 mW     

A CMOS Low-Power Optical Front-End for 5 Gbps Applications

In this paper, a new low-power optical receiver front-end is proposed in 90 nm CMOS technology for 5 Gb/s AApplications. However, to improve the gain-bandwidth trade-off, the proposed Trans-Impedance Amplifier (TIA) uses an active modified inverter-based topology followed by a common-source amplifier, which uses active inductive peaking technique to enhance the frequency bandwidth in an increased gain level for a reasonable power consumption value. The proposed TIA is analyzed and simulated in HSPICE using 90 nm CMOS technology parameters. Simulation results show a 53.5dBΩ trans-impedance gain, 3.5 GHz frequency bandwidth, 16.8pA/√Hz input referred noise, and 1.28 mW of power consumption at 1V supply voltage. The Optical receiver is completed using three stages of differential limiting amplifiers (LAs), which provide 27 dB voltage gain while consume 3.1 mW of power. Finally, the whole optical receiver front-end consumes only 5.6 mW of power at 1 V supply and amplifies the input signal by 80 dB, while providing 3.7 GHz of frequency bandwidth. Finally, the simulation results indicate that the proposed optical receiver is a proper candidate to be used in a low-power 5 Gbps optical communication system.