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提出了一种利用单电子晶体管与金属氧化物半导体的混合结构(SET-MOS)实现离散混沌系统的方法.研究了两个并联结构的单电子晶体管在电流源偏置下的传输特性,并建立其相应的S形分段线性函数模型.基于该模型实现了一维离散映射系统,分析了它的动力学特性,包括一维映射过程、分岔图和Lyapunov指数等.最后利用SET-MOS混合电路设计出该离散混沌系统的电子电路,验证了理论分析和实现方法的正确性.研究结果表明,该方法不仅可行,而且物理实现结构简单,利于集成.
关键词:
离散映射
Lyapunov指数
分岔
电路实现 相似文献
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用金属氧化物半导体(MOS)晶体管模型取代传统Colpitts混沌振荡电路中的三极管模型, 提出了一种基于MOS管的Colpitts混沌振荡电路. 通过合适的归一化方法, 得到了与基于三极管电路类似的状态模型. 平衡点的指标说明两种结构产生混沌的机理并不相同. 然后, 通过参数反演, 得到了详细的电路参数, 并用Pspice软件仿真得到了混沌吸引子和混沌信号的频谱图, 说明了此结构可在低电压下工作并且能产生高频率的混沌信号. 最后, 用误差反馈的方法实现了这种结构的同步.
关键词:
Colpitts混沌
金属氧化物半导体晶体管
低电压
误差反馈同步 相似文献
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为拓广离散忆阻器的研究与应用,基于差分算子,构建了具有平方非线性的离散忆阻模型,并实现了Simulink仿真.仿真结果表明,设计的忆阻器满足广义忆阻定义.将得到的离散忆阻引入三维混沌映射中,设计了一种新型四维忆阻混沌映射,并建立了该混沌映射的Simulink模型.通过平衡点、分岔图、Lyapunov指数谱、复杂度、多稳态分析了系统复杂动力学特性.本文从系统建模角度出发,构建离散忆阻与离散忆阻混沌映射,进一步验证了离散忆阻的可实现性,为离散忆阻应用研究奠定了基础. 相似文献
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石墨烯因具有优良的电学特性,在半导体行业中受到广泛关注,特别因其具有超薄的结构和极高的载流子迁移率,为解决短沟道效应提供了可能,并且在高速电子领域具有应用前景.近年来,使用石墨烯作为沟道材料制备射频晶体管及射频电路是发挥石墨烯材料优势的一个重要研究方向.制造高性能的射频器件,首先要制备出高性能的石墨烯材料.在金属衬底上沉积均匀的单层石墨烯材料或者在绝缘衬底上外延生长单层、双层石墨烯材料都是获得高质量石墨烯材料的常用方法.器件结构及工艺流程的设计也是提升晶体管射频性能的重要因素,多指栅结构、T型栅结构、埋栅结构以及自对准工艺的发展能够有效改善石墨烯射频晶体管的截止频率及最大振荡频率.石墨烯晶体管独特的电学特性使得其除了可以构造与其他半导体材料电路相似的射频电路结构,还可以构造出功能完整并且结构更加简单的新型射频电路结构. 相似文献
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基于γ射线辐照条件下单轴应变Si纳米n型金属氧化物半导体场效应晶体管(NMOSFET)载流子的微观输运机制,揭示了单轴应变Si纳米NMOSFET器件电学特性随总剂量辐照的变化规律,同时基于量子机制建立了小尺寸单轴应变Si NMOSFET在γ射线辐照条件下的栅隧穿电流模型,应用Matlab对该模型进行了数值模拟仿真,探究了总剂量、器件几何结构参数、材料物理参数等对栅隧穿电流的影响.此外,通过实验进行对比,该模型仿真结果和总剂量辐照实验测试结果基本符合,从而验证了模型的可行性.本文所建模型为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了有价值的理论指导与实践基础. 相似文献
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The hybrid CMOS molecular (CMOL) circuit, which combines complementary metal–oxide–semiconductor (CMOS) components with nanoscale wires and switches, can exhibit significantly improved performance. In CMOL circuits, the nanodevices, which are called cells, should be placed appropriately and are connected by nanowires. The cells should be connected such that they follow the shortest path. This paper presents an efficient method of cell allocation in CMOL circuits with the hybrid CMOS/nanodevice structure; the method is based on a cultural algorithm with chaotic behavior. The optimal model of cell allocation is derived, and the coding of an individual representing a cell allocation is described. Then the cultural algorithm with chaotic behavior is designed to solve the optimal model. The cultural algorithm consists of a population space, a belief space, and a protocol that describes how knowledge is exchanged between the population and belief spaces. In this paper, the evolutionary processes of the population space employ a genetic algorithm in which three populations undergo parallel evolution. The evolutionary processes of the belief space use a chaotic ant colony algorithm. Extensive experiments on cell allocation in benchmark circuits showed that a low area usage can be obtained using the proposed method, and the computation time can be reduced greatly compared to that of a conventional genetic algorithm. 相似文献
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S. A. Dagesyan V. V. Shorokhov D. E. Presnov E. S. Soldatov A. S. Trifonov V. A. Krupenin O. V. Snigirev 《Moscow University Physics Bulletin》2017,72(5):474-479
We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (~20 meV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only. 相似文献
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V. A. Krupenin S. V. Lotkhov D. E. Presnov 《Journal of Experimental and Theoretical Physics》1997,84(1):190-196
A nanostructure based on a uniform one-dimensional array of ultrasmall tunnel junctions (a single-electron trap) characterized
by an ability to maintain an excess charge of several electrons in an island is fabricated and investigated. Changes in the
state of the trap are detected by a single-electron transistor. At the working temperature T=35 mK the storage time of a charge state is more than 8 h (which is the duration of the experiment). It is demonstrated that
the possible factors limiting the lifetime of a state at temperatures below the typical temperatures for thermal activation
include the influence of the random distribution and drift of the effective background charges of the metal islands, as well
as the reverse influence discovered here of the transistor on the trap. As the current passing through the transistor increases,
the hysteresis loop in the dependence of the charge in the trap on the control voltage narrows. It is noted that an increase
in the current from 5 to 300 nA is equivalent to raising the working temperature to 250 mK.
Zh. éksp. Teor. Fiz. 111, 344–357 (January 1997) 相似文献
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设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)为开关的高压脉冲电源。采用自匹配传输线结构线路形式,串联多个以光纤信号隔离触发的MOSFET作为高耐压开关,在传输线的外皮产生2个纳秒脉冲,再用传输线变压器对2个纳秒脉冲进行功率合成,在200 Ω负载上输出了幅度20 kV,重复频率20 kHz,脉冲宽度约40 ns的脉冲。分析脉冲源装置结构,对实验装置建立仿真模型,阐述了输出波形畸变的原因,给出了影响输出脉冲波形特性的因素,为下一步优化波形工作提供了理论参考。 相似文献