室温下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性

在室温下利用波长532nm，脉冲宽度7ns的纳秒脉冲激光研究了不同电压和激光能量密度作用下Pr_0.7Ca_0.3MnO₃薄膜的瞬态光响应特性.在激光能量密度为275.16mJ/cm²时，其最大电阻变化率达到92.3%，响应时间约36ns.室温下电压变化对薄膜的光响应特性影响不大，而诱导光能量密度的影响则很明显，能量密度越大，电阻变化越大，响应时间越短，并且电阻变化和响应时间均与激光能量密度呈非线性关系.这种光响应来源于薄膜中的光致非稳态绝缘体-金属相变，有望在新型光电器件上获得应用.     

波段外激光辐照光导型InSb探测器的一种新现象

利用不同功率密度的10.6 μm(光子能量为0.12 eV)连续激光辐照了禁带宽度为0.228 eV的光导型锑化铟探测器, 得到了与以往报道不同的实验现象. 当10.6 μm波段外激光辐照光导型探测器时, 探测器吸收激光能量后温度升高. 在探测器的温升过程中, 存在一个转变温度T₀. 当探测器的温度T<T₀时, 载流子浓度基本不变, 迁移率随温度的升高呈T^-2.35趋势下降, 引起探测器的电导率减小, 电阻增大, 响应输出电压升高; 当T>T₀时, 热激发载流子浓度随温度的升高呈指数增长, 电阻急剧下降, 超过了载流子迁移率降低对电阻的影响, 响应输出急剧下降. 光电导探测器在较高功率密度波段外激光辐照下的响应特性是载流子的浓度和迁移率在温度影响下相互作用的结果. 这对进一步完善半导体内载流子输运模型提供了实验依据.     

Gd0.55Sr0.45MnO3薄膜光诱导电阻变化特性研究

分别采用固相反应和脉冲激光沉积的方法制备了电荷-轨道有序态锰氧化物Gd_0.55Sr_0.45MnO₃块材和多晶薄膜, 研究了薄膜在光诱导作用下的电阻变化特性. 实验结果表明该薄膜在整个测量温度范围内表现出了半导体型导电特性. 利用变程跳跃模型拟合电阻温度关系可知, 其电荷有序态转变温度为70 K. 激光作用致使薄膜电阻减小, 当激光功率度为40 mW/mm²时, 最大光致电阻相对变化值可达99.8%, 且在8 s的时间内达到了平衡态, 温度对其影响很小; 当激光功率度为6 mW/mm²时, 获得的最大光致电阻相对变化值为44%, 而且时间常数随温度的升高而增大, 这主要是由于光诱导和热扰动共同作用的结果.     

光折变晶体BaTiO3中二波混频的温度效应

研究了光折变晶体钛酸钡中相向传输的二波混频的温度效应,得到在 BaTiO₃中增益耦合系数随温升而增加、并在85℃左右反向.说明其主要载流子的类型在此温度时发生改变.给出了有效陷阱浓度N(T)的温升模型,其理论预期值与实验数据符合较好.     

制备压力对La2/3Sr1/3MnO3的磁电阻效应的影响

 研究了制备压力对纳米块状样品La_2/3Sr_1/3MnO₃的结构、磁学和电学性质的影响。结果表明：样品的晶粒尺寸随制备压力的增加而变小，且不同样品的磁电阻效应不同。低场磁电阻效应在整个实验温区都随制备压力的升高而变弱，这主要是由制备压力使样品晶粒界面连接更紧密所导致；T<200 K时，高场磁电阻效应随制备压力的升高而变强，T>200 K时，高场磁电阻效应随制备压力的升高反而变弱，这主要是由制备压力改变样品的晶粒尺寸所引起。     

激光光控超导YBa2Cu3Ox薄膜开关的研制

在对光控热电效应开关进行理论分析的基础上,木文提出用YBa₂Cu₃O_x薄膜制作光控开关,并测试了在液氮温度下薄膜开关在不同激光波长下的特征参数,测试的最好结果是响应度R_v(632.8nm,10kHz,1Hz)为217V/W,归一化探测率D_*(632.8nm,10kHz,1Hz)为2.3×10¹¹cm.Hz^1/2/W,响应时间τ为0.21ms.     

压力对TlPbxBaCa3Cu3O超导电性的影响

 在零电阻温度T_c0达到120 K的TlBaCa₃Cu₃O_y超导体中，掺入不同含量的Pb后，超导电性受到抑制，点阵常数减小。加压时，T_c先随压力p的增加而上升，样品1（x_Pb=0.05）的dT_c0/dp=1.7 K/GPa，样品2（x_Pb=0.5）的dT_c0/dp=2.2 K/GPa。T_c的峰值随Pb的增加而减小。加压时，对由于Pb的加入引起的Cu—O层的精细结构变化起到调制作用。     

高温高压下CeTbO3合成过程中电阻的动态测试研究

 在0.5 GPa、4.0 GPa的压力下，从室温到800 ℃的温度范围内测量了氧化物CeTbO₃、单稀土氧化物Tb₄O₇、CeO₂和摩尔比维4∶1配比的混合物CeO₂+Tb₄O₇等的电阻随温度变化关系。对这四种物质均反映出电阻随温度增加而减小的半导体特征。在压力维0.5 GPa，温度高于600 ℃时发现了混合物CeO₂+Tb₄O₇、氧化物Tb₄O₇中电阻变化的起伏。X射线衍射谱表明，对应这一电阻变化，在结构上出现了变化。结果分析表明，这一变化与Tb⁴⁺→Tb³⁺的价态变化密切相联。     

多自旋态离子Co替代诱导La2/3Ca1/3MnO3体系的输运反常

利用具有多自旋态的Co离子进行Mn位替代，制备了La_2/3Ca_1/3Mn_1-xCo_xO₃ (0≤x≤0.15) 系列样品并研究了体系的结构和输运特性.结果表明，在替代范围内，样品呈现很好的单相结构，各晶格参数随替代量的增大而减小；Co替代导致体系出现电输运反常，具体表现为在居里温度T_C以下电阻-温度曲线的二次金属-绝缘转     

名义成分为La1.0Ca2.0Mn2O7锰氧化物的压阻效应

 利用低温高压电阻原位测量装置（自箝铍青铜活塞-圆筒式压砧），在0~1.05 GPa静水压力范围内，对以层状钙钛矿结构为主相、名义成分为La_1.0Ca_2.0Mn₂O₇的锰氧化物样品进行了压阻效应研究。实验观测到异常的压阻效应。在低温5~150 K范围内，压力为0.55 GPa时，样品呈现出高达40%的压阻效应，而且，金属-绝缘体相变温度在低压范围内随压力的增加而增加，但随着压力的进一步增加而减小。     

Quantum size effects on the perpendicular upper critical field in ultrathin lead films

We report the thickness-dependent (in terms of atomic layers) oscillation behavior of the perpendicular upper critical field Hc2perpendicular in the ultrathin lead films at the reduced temperature (t = T/Tc). Distinct oscillations of the normal-state resistivity as a function of film thickness have also been observed. Compared with the Tc oscillation, the Hc2perpendicular shows a considerable large oscillation amplitude and a pi phase shift. The oscillatory mean free path caused by the quantum size effect plays a role in Hc2perpendicular oscillation.     

单晶Nd3Co的低温压力效应研究

本文测量了沿Nd3Co单晶b轴在不同压力下电阻率随温度的变化,并对Nd3Co的居里温度和磁性转变场随压力的变化规律进行了研究.结果表明:随着压力的增大,样品剩余电阻率逐渐减小,居里温度平均每GPa 升高2.1 K,磁性转变场平均每GPa增大0.9 T.通过对结果的分析,可以认为压力增大使样品中原子间距变小,晶粒间的连接更加紧密,导致电阻率减小;原子间距变小,4f电子和传导电子间的关联增强,导致样品中Nd离子磁矩的转向变得困难,从而磁性转变场增大.     

Vortex glass transition and quantum vortex liquid at low temperature in a thick a- MoxSi1-x film

We present measurements of ac complex resistivity, as well as dc resistivity, for a thick amorphous MoxSi1-x film at low temperatures ( T>0.04 K) in various constant fields B. We find that the vortex glass transition (VGT) persists down to T approximately 0.04Tc0 up to B approximately 0.9Bc2(0), where Tc0 and Bc2(0) are the mean-field transition temperature and upper critical field at T = 0, respectively. In the limit T-->0, the VGT line Bg(T) extrapolates to a field below Bc2(0), while the dc resistivity rho(T) tends to the finite nonzero value in fields just above Bg(0). These results indicate the presence of a metallic quantum vortex liquid at T = 0 in the regime Bg(0)相似文献   

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La_2/3Ca_1/3MnO₃纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为T_c≈308K（近似为电阻峰值温度T_p）；在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段（Tc）表现为光致电阻率增大效应，即ΔR/R＞0，并在R-T曲线拐点附近取得极大值，（ΔR/R）_max=43.5%；当T>T关键词： 钙钛矿薄膜 光响应 电子自旋 小极化子     

In situ conductivity measurement of matter under extreme conditions by film fabrication on diamond anvil cell

The film-fabricating technology has been used to prepare the microcircuit on diamond anvil for resistivity measurement under extreme conditions. We chose molybdenum as the electrode material and alumina as the insulator and protective material. The sample thickness measurement was conducted and then the resistivity correction was performed under different thickness. The experimental error was proved to be less than 10%. By mounting alumina film between diamond anvil and microcircuit, high-temperature performance of a laser heating diamond anvil cell was improved obviously, which is available for in situ resistivity measurement under high pressure and high temperature. Meanwhile, the impedance spectroscopy of a powdered semiconductor sample was detected. Through the impedance arcs obtained, the grain boundary contribution to the resistivity can be well distinguished.     

Critical behavior of the ferromagnetic perovskite BaRuO3

A thorough study has been made of the physical properties under high pressure of the perovskite BaRuO3 synthesized under pressure; it includes the critical behavior in the vicinity of Tc to 1 GPa and the temperature dependences of resistivity and ac magnetic susceptibility up to 8 GPa. The ferromagnetism in BaRuO3 is suppressed at 8 GPa. Critical fluctuations in the vicinity of Tc have been found in BaRuO3 and they are enhanced under pressure. These observations are in sharp contrast to SrRuO3 where mean-field behavior is found at Tc.     

Spatially-resolved characterization of HTSC-films near T c by laser raster microscopy with thermal excitation

A method (laser raster microscopy with thermal excitation, LRMTE) for characterizing high-T _c thin-film superconductors (HTSC) with microscopic resolution is described. By means of spatially resolved laser excitation and subsequent monitoring of the time dependence of the film resistivity at a base temperature near the transition temperature T _c, spatial variations of the transition temperature (T _c), of the temperature coefficient of the resistivity (dQ/dT), of the heat conductivity and heat capacity of the film and of the heat conductivity between film and substrate can be detected with high spatial resolution (15 m have been achieved so far).     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Direct conversion of a metal organic compound to epitaxial Sb-doped SnO2 film on a (0 0 1) TiO2 substrate using a KrF laser, and its resulting electrical properties

Epitaxial Sb-doped SnO₂ (0 0 1) thin film on a TiO₂ (0 0 1) substrate was successfully prepared by laser-assisted metal organic deposition at room temperature. The effects of the precursor thin film and laser fluence on the resistivity, carrier concentration, and mobility of the Sb-doped SnO₂ film were investigated. The resistivity of the Sb-doped SnO₂ film prepared by direct irradiation to metal organic film is one order of magnitude lower than that of film prepared by irradiation to amorphous Sb-doped SnO₂ film. From an analysis of Hall measurements, the difference between the resistivity of the Sb-doped SnO₂ film prepared using the metal organic precursor film and that of amorphous precursor film appears to be caused by the mobility. Direct conversion of the metal organic compound by excimer laser irradiation was found to be effective for preparing epitaxial Sb-doped SnO₂ film with low resistivity.