532nm激光照射碳纳米管光场致发射电子枪(英文)

报道了碳纳米管光场致发射电子枪的初步研究结果。在532nm激光照射下碳纳米管光场致发射电子枪在极间高压为27kV时得到的最大的脉冲流强可以达到3.364A,其脉冲电流发射密度可达6.728A/cm2,对应脉冲电荷量为38.7nC。碳纳米管的量子效率通过公式计算为3.73×10-5,给出了在532nm激光照射下碳纳米管光场致发射电子枪发射电流随激光功率和极间电压的变化关系。     

天鹅绒与碳纳米管阴极强流脉冲发射特性

在2 MeV直线感应加速器注入器平台上开展了天鹅绒阴极与碳纳米管阴极的强流脉冲发射特性综合实验。研究结果表明:天鹅绒阴极与碳纳米管阴极均具有强流脉冲发射性能,在1.61 MV的二极管电压下,天鹅绒阴极与碳纳米管的发射电流密度分别为84,108 A/cm2;启动时间分别为21,40 ns;放气量分别为0.29,0.91 PaL;放出气体分子数目与发射电子数目之比分别为64,225;两种冷阴极强流脉冲发射时的放气质谱相似。     

栅网结构碳纳米管冷阴极电子光学系统的设计

基于碳纳米管冷阴极实验测试结果,采用三维粒子模拟软件对大面积碳纳米管冷阴极的场致发射特性进行了仿真,研究了栅网结构不同尺寸对碳纳米管冷阴极场致发射特性及电子注通过率的影响,并在此基础上设计出面积压缩比为18,输出电流密度为14.9 A/cm2的带状注电子枪。为进一步研制碳纳米管冷阴极电子光学系统和相关微波、毫米波电真空辐射源器件提供了技术基础。     

W波段扩展互作用器件均匀磁聚焦电子光学系统

扩展互作用器件,采用三个线圈和一个磁极实现均匀磁场分布。根据理论计算采用有限元法磁学(FEMM)仿真软件对所求磁场进行了建模分析,依据FEMM计算的磁场结合静电电子枪,采用CST仿真软件对高电流密度、高压缩比的电子注在均匀聚焦磁场的作用下传输进行优化。经过计算得出,在工作电压为17 kV、阴极发射电流密度小于10 A/cm2的条件下,由皮尔斯电子枪发射的电子注在均匀磁场的聚焦作用下传输良好,通过率为100%,得到了导流系数为0.175μP的电子枪,在均匀磁场区形成了高电流密度、高压缩比的电子注,平均电流密度达到343.17 A/cm2,压缩比为32,电子注横纵速度比为7.2%。     

反铁电陶瓷的强电子发射特性研究

采用掺镧锆锡钛酸铅反铁电陶瓷作为阴极材料,研究了脉冲电压激励下陶瓷的电子发射特性.当激励电压为800V、抽取电压为0V时,得到1.27A/cm²的发射电流密度;当抽取电压增加到4kV时,获得1700A/cm²的发射电流密度.分析了发射电流随抽取电压的变化关系,讨论了反铁电陶瓷强电子发射的内在机理.结果表明：掺镧锆锡钛酸铅反铁电陶瓷能够在较低的激励电压(400V)下实现电子发射,发射电流远大于按照Child-Langmuir定律计算出的电流,三接点附近局域反铁电—铁电相变产生初始电子发射,初始电子电离中性粒子形成等离子体,增强了电子发射. 关键词： 铁电阴极 反铁电体 电子发射     

碳纳米管场致发射中的空间电荷效应

采用微波等离子体化学气相沉积(MWPCVD)方法成功制备以碳纳米管束为单元的场致发射阵列,获得很好的场致发射电流发射特性,在电流密度较大时,发现I-V特性偏离由Fowler-Nordheim公式计算出的结果。采用Electron Beam Simulation(EBS)软件进行模拟分析发现:在电流密度较低时,I-V特性能很好与F-N公式吻合。但碳纳米管尖端电流密度大于106A/cm2时,碳纳米管尖端处的有效电场强度受空间电荷的影响比较明显,进而对碳纳米管的场致发射特性显现出不可忽略的影响,此时碳纳米管的发射电流密度开始受到空间电荷的限制。     

丝网印刷制备碳纳米管阴极的强流脉冲发射特性研究

采用丝网印刷法制备了一种大面积的碳纳米管阴极,表征了阴极表面碳纳米管的形貌及分布.研究了该阴极在不同脉冲条件下的高压脉冲发射特性,分析了发射时阴极面等离子体产生和发射点的分布.研究表明：碳纳米管阴极的脉冲发射机制为爆炸电子发射,在平均场强为16.7V/μm的单脉冲电场下,阴极的最高发射电流密度为99 A/cm².在平均场强为15.4 V/μm的双脉冲电场下,阴极的最高发射电流密度为267 A/cm².碳纳米管阴极可以作为强流电子束源在高能微波器件中得到应用. 关键词： 强流脉冲电子束 碳纳米管 阴极 丝网印刷     

铜基碳纳米管薄膜的制备及其强流脉冲发射特性研究

为了研究碳纳米管薄膜的强流脉冲发射特性, 采用酞菁铁高温热解方法在机械抛光铜基底上直接生长了碳纳米管薄膜 (Cu-CNTs), Cu-CNTs生长方向各异. 在20 GW脉冲功率源系统中采用二极结构对Cu-CNTs的强流脉冲发射特性进行研究, 研究结果表明: 在单脉冲发射条件下, 随脉冲电场峰值的增大, Cu-CNTs薄膜的发射电流峰值呈线性增加, 当宏观场强为15.5 V/μ时, 发射脉冲电流的峰值可达到5.56 kA, 对应的发射电流密度0.283 kA/cm², 当宏观场强达到32.0 V/μ时, 发射脉冲电流的峰值可达到18.19 kA, 对应的发射电流密度0.927 kA/cm², 发射电流能力明显优于已有报道. 在相同峰值, 连续多脉冲情况下, 碳纳米管薄膜具有良好的发射可重复性, 且发射性能稳定. 关键词： 强流脉冲发射 碳纳米管 铜基底 稳定性     

不同发光染料的顶发射有机电致发光器件的研制

通过设计合理的微腔结构,制备了基于绿光染料C545t、黄光染料Rubrene、红光染料DCJTB的3种顶发射有机电致发光器件。研究了不同发光染料对顶发射器件的光谱的影响。研究表明,微腔结构对光谱具有窄化作用。绿光、黄光器件的发光峰波长并未随视角增大而明显变化,体现出良好的光谱角度性,而红光器件却出现了明显的光谱蓝移现象。绿光器件的最大功率效率为8.7 lm/W,当电流密度为45 m A/cm2时,亮度能达到7 205 cd/m2;黄光器件的电流效率最大值为11.5 cd/A,当电流密度为48 m A/cm2时,亮度可达到3 770 cd/m2;红光器件的电流效率最大能达到3.54 cd/A,当电流密度为50 m A/cm2时,可获得1 358 cd/m2的亮度。采用合适的发光材料以及合适的器件结构,不仅可以提高顶发射器件的色纯度及发光效率,还可以改善器件发光光谱的角度依赖性。     

碳纳米管阴极的强流脉冲发射性能研究

采用丝网印刷和涂敷方法制备了两种碳纳米管阴极，并研究了两种阴极的强流脉冲发射特性，表征了阴极表面碳纳米管的形貌及分布.研究结果表明在脉冲宽度为100 ns、电压为1.64×10⁶ V的脉冲电场下，涂敷法制备阴极的场发射电流最高达5.11 kA，最高发射电流密度达260 A/cm².丝网印刷法制备阴极的场发射稳定性优于涂敷法制备阴极，但其发射电流低.阴极表面发射体的形貌与分布影响了阴极的脉冲发射性能.碳纳米管阴极的脉冲发射机理为爆炸电子发射.碳纳米管阴极可以作为强 关键词： 碳纳米管 阴极 脉冲发射 强电流     

碳纳米管阴极强流脉冲发射特性实验

 在2 MeV直线感应加速器注入器平台上研究了采用浸渍涂覆方法制备的大面积碳纳米管阴极发射体的强流发射特性。研究结果表明：在脉冲高压电场下,碳纳米管阴极具有强流电子束发射能力,发射电流密度较大;碳纳米管阴极发射电子过程为场致等离子体发射。实验过程中,阴极端取样电阻环收集到的最大发射电流达350 A,阳极端法拉第筒收集的发射电流为167 A,最大阴极发射电流密度为19.4 A/cm²。     

An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

An improved planar-gate triode with carbon nanotubes (CNTs) field emitters has been successfully fabricated by conventional photolithography, screen printing and electrophoretic deposition (EPD). In this structure, cathode electrodes and ITO arrays linked with gate electrodes were interdigitated and paralleled on the same plane although the gate electrodes and cathode electrodes were isolated by dielectric layer, a so-called improved planar-gate triode structure. An electrophoretic process was developed to selectively deposit CNTs field emitters onto cathode electrodes in the CNTs suspension by an applied voltage between the gate electrodes and cathode electrodes. The optical microscopy and FESEM image showed that the CNTs emitters with the uniform packing density were selectively defined onto the cathode electrodes. In addition, field emission characteristics of an improved planar-gate triode with CNTs field emitters were investigated. The experiment results indicated that the turn-on voltage of this triode structure at current density of 1 μA/cm² was approximately 55 V. The anode current and gate current came to 396 μA and 325 μA, at gate voltage and anode voltage of 100 V and 4000 V, respectively and at the anode-cathode spacing of 2000 μm. The emission image became brighter and the luminous image with dot matrix on the anode plate obviously increased with the increase of the gate voltage. Moreover, the emission current fluctuation was smaller than 5% for 11 h, which indicated that the improved planar-gate triode has a good field emission performance and long lifetime.     

大电流碳纳米管场发射阴极研究

报道了在较大发射面积上获得较大场发射电流的碳纳米管场发射阴极。为了加强场发射电流,在丝网印刷浆料中增加一种金属纳米颗粒,金属颗粒增强了碳纳米管发射体和衬底的接触,提高碳纳米管和衬底的粘附作用。利用改进后的丝网印刷方法制备了大电流碳纳米管场发射阴极,测得最大发射电流为68.0 mA,阴极有效发射面积约1.1 mm2,发射电流密度约6.2 A/cm2;并成功将改进方法制备的大电流场发射碳纳米管阴极应用于场发射真空器件原型。实验证明这种具有较大发射电流和较大发射电流密度的场发射能够满足部分大功率电子器件的需求。收稿日期:; 修订日期:     

Ni/Au层对碳纳米管薄膜强流脉冲发射稳定性的影响

采用酞菁铁高温裂解法在镀有镍金缓冲层的硅基底上生长了碳纳米管薄膜(Ni/Au-CNT),并采用二极结构在相同的主Marx电压下研究了其强流脉冲发射稳定性.结果表明:在脉冲电压峰值为1.60～1.74 MV(对应的脉冲电场峰值为11.43～12.43 V/μm)时,Ni/Au-CNT薄膜首次发射的电流峰值可达331.2A;Ni/Au层不仅能提高CNT薄膜的强流脉冲发射电流峰值,还能提高其发射稳定性;当冷阴极重复脉冲发射7次时,Ni/Au-CNT的脉冲电流峰值衰减到初值的72％,而Ni-CNT和Si-CNT脉冲电流峰值分别衰减到初值的62％和32％.     

基于铟锡氧化物/Ti复合电极的高亮度碳纳米管场致发射冷阴极

通过制作亲碳性铟锡氧化物(ITO)/Ti复合电极,改善移植型碳纳米管(CNT)冷阴极的导电电极与CNT膜层之间附着性能,从而消除CNT与电极间的界面势垒和非欧姆接触对CNT阴极场发射均匀性和稳定性的影响.采用磁控溅射技术和丝网印刷工艺制作了ITO/Ti基CNT阴极.用X射线衍射仪和场致发射扫描电子显微镜表征CNT阴极结构,结果显示热处理后的ITO/Ti基CNT阴极中可能有TiC相生成,从而使得导电电极与CNT形成有中间物的强作用体系.该体系降低甚至消除电极与CNT之间的界面势垒,增加了CNT与电极间形成欧姆接触的概率.用四探针技术分析电阻率,结果表明ITO/Ti复合电极具有电阻并联效果,CNT阴极导电性能提高.场致发射特性测试表明ITO/Ti基CNT阴极的场致发射电流达到384μA/cm2,较普通ITO基CNT阴极的场致发射电流有显著提高,能够激发测试阳极发出均匀、稳定的高亮度荧光.制作ITO/Ti复合电极是实现场致发射稳定、均匀的低功耗CNT阴极的有效途径.     

Generation and transport of high-current, low-energy electron beams in a system with a gas-filled diode

Investigations of the generation and transport of a high-current, low-energy electron beam are performed in a system with a gas-filled diode based on a plasma cathode. At accelerating voltages of up to 20 kV and pressures of (1–5)×10⁻¹ Pa, a beam with an emission current of 600 A, emission current density of 12 A/cm² and pulse duration of 30 μs if obtained in a diode with a grid-stabilized emission opening having a diameter equal to 8 cm. The beam is transported in the absence of an external magnetic field over a distance of 20 cm. The beam is compressed by its self-magnetic field, and the current density at the collector reaches 100 A/cm² when the beam diameter is 3 cm. Zh. Tekh. Fiz. 68, 44–48 (January 1998)     

Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires

Field emission studies of WO_2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10⁶ μA/cm² can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO_2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.     

Fabrication and properties of film-under-gate field emission arrays with SnO2 emitters for flat lamp

The film-under-gate field emission arrays (FEAs) have been fabricated on the glass substrates by conventional photolithography, anodic oxidation and lift-off method. SnO₂ emitters were deposited on the cathode electrodes of under-gate triode by screen printing. The image of film-under-gate field emission arrays with SnO₂ emitters was measured by the optical microscopy and field emission scanning electron microscopy (FESEM). The electric field distributions and electron trajectories of film-under-gate triode were simulated in the same anode voltage and different gate voltage by ANSYS. I-V characteristics of film-under-gate triode with SnO₂ emitters were investigated. It indicated that the SnO₂ emitters by screen printing uniformly distributed on the surface of cathode electrodes. The maximum anode current in this triode structure could come to 385 μA and the highest lightness was approximately 270 cd/m² as the gate and anode voltage was 140 V and 2000 V, respectively, at the anode-cathode spacing of 1100 μm. Moreover, the emission current fluctuation was less than 5% for 8 h. It showed that the fabricated device has a good stability of field emission performance and long lifetime, which may lead to practical applications for field emission electron source based on flat lamp for back light units (BLUs) in liquid crystal display (LCD).