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采用表面热透镜技术,对3.8μm和2.8μm激光辐照下镀制在Si基底上的单层ZnS,YbF3和YBC薄膜及不同膜系的YbF3/ ZnS多层分光膜和多层高反膜,以及镀制在CaF2基底上的增透膜进行了吸收测量,并对3.8μm和2.8μm 激光的测量结果进行了比较分析。实验结果表明,2.8μm波长下的吸收比3.8μm的大得多,两者之间约相差一个量级,测得的多层高反膜YbF3/ZnS薄膜在的3.8μm处的最低吸收为4.57×10-4,测量系统的灵敏度约为10-5。 相似文献
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分别采用电子束热蒸发技术和溶胶-凝胶技术在K9基片上镀制了光学厚度相近的ZrO2单层薄膜,测试了两类薄膜的激光损伤阈值。分别采用透射式光热透镜技术、椭偏仪、原子力显微镜和光学显微镜研究了两类薄膜的热吸收、孔隙率、微观表面形貌、激光辐照前薄膜的杂质和缺陷状况以及激光辐照后薄膜的损伤形貌。实验结果表明:两类薄膜的不同损伤形貌与薄膜的热吸收与微观结构有关, 物理法制备的ZrO2膜结构致密紧凑,膜层的杂质和缺陷多;化学法制备的ZrO2膜结构疏松多孔,膜层纯净杂质少,激光损伤阈值达26.9 J/cm2;因物理法制备的ZrO2膜拥有更大的热吸收(115.10×10-6)和更小的孔隙率(0.20),其激光损伤阈值较小(18.8 J/cm2),损伤主要为溅射和应力破坏,而化学法制备的ZrO2膜的损伤主要为剥层。理论上对实验结果进行了解释。 相似文献
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用电子束热蒸发方法镀制了Al2O3材料的单层膜,对它们在空气中进行了250~400 ℃的高温退火。对样品的透射率光谱曲线进行了测量,计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪(XRD)测量分析了薄膜的微观结构,采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降,薄膜结构在退火温度为400 ℃时仍然为无定形态,样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射,吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化,从而使薄膜材料的非化学计量比趋于正常。 相似文献
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采用电子束蒸发的方法制备了3种具有不同表面层材料及结构的中心波长为1 064 nm的零度高反镜,3种膜系表面层分别为1/4波长光学厚度的HfO2,1/2波长光学厚度的SiO2,以及1/4波长光学厚度的SiO2。光谱测试表明:三者在1 064 nm处均有较高的反射率(高于99.8%),利用热透镜的方法测量得到3个膜系辐照激光正入射情况下,薄膜对光的吸收比例分别为3.0×10-6,5.0×10-6和6.5×10-6,其损伤阈值分别为32.5,45.2和28.4 J/cm2。并在膜层内部电场分布和膜层材料物理特性的基础上分析了3种不同表面层膜系吸收和损伤阈值差别的原因。 相似文献
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介绍了多碱光电阴极Na2KSb膜层荧光谱的测量原理,测量了两个Na2KSb膜层样品在不同半径位置的荧光谱.测量数据表明,Na2KSb膜层荧光谱的峰值波长从阴极面的中心到边缘逐步增大,同时峰值荧光强度也逐步增强.原因是阴极窗表面的锑原子密度从中心向边缘逐步减小.当Na2KSb膜层中的锑超过Na2KSb所需的化学计量比时,荧光峰值波长向短波方向移动,同时荧光强度减弱;当Na2KSb膜层中的锑达到Na2KSb所需的化学计量比时,荧光峰值波长达到最大,同时荧光强度也达到最强.通过荧光测试,可以判断Na2KSb膜层的化学计量比是否达到2:1:1或膜层中的锑是否过量.同时通过测量阴极面上不同位置的荧光谱,可以测量Na2KSb膜层在阴极面上的组份均匀性.锑在阴极面上的原子密度越均匀,利用整个阴极面上的光电流变化来监控阴极膜层生长的方法就更准确,组份均匀性也更好,Na2KSb膜层的厚度可以更厚,对长波可见光的吸收更多,阴极的灵敏度也更高.因此在像增强器多碱阴极的制造过程中,要尽量使蒸发在阴极窗表面的锑原子密度均匀,这样才能获得更高的阴极灵敏度. 相似文献
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用电子束蒸发及光电极值监控技术在石英基底上沉积了三倍频分离膜,将部分样品置空气中于250 ℃温度下进行3 h热退火处理。然后用Lambda900分光光度计测量了样品的光谱性能;用表面热透镜技术测量了样品的弱吸收值;用调Q脉冲激光装置测试了样品分别在355 nm和1 064 nm的抗激光损伤阈值。实验结果发现,样品的实验光谱性能良好,退火前后其光谱性能几乎没有发生温漂,说明薄膜的温度稳定性好;同时弱吸收平均值从退火前的1.07×10-4下降到退火后的6.2×10-5,从而使对基频的抗激光损伤阈值提高,从14.6 J/cm2上升到18.8 J/cm2,但是三倍频阈值在退火后有显著降低,从7.5 J/cm2下降到2.5 J/cm2。 相似文献
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采用溶胶-凝胶技术分别在K9基片上镀制了光学厚度相近的单层SiO2酸性膜和碱性膜。测试了两类薄膜的激光损伤阈值;分别采用透射式光热透镜技术、椭偏仪、原子力显微镜、扫描电镜和光学显微镜研究了两类薄膜的热吸收、孔隙率、微观表面形貌、激光辐照前薄膜的杂质和缺陷状况以及激光辐照后薄膜的损伤形貌。实验结果表明:相对于碱性膜,酸性膜有更大的热吸收和更小的孔隙率,因此其激光损伤阈值较小;两类薄膜不同的损伤形貌与薄膜的热吸收系数与微观结构有关。 相似文献
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分别以富集有Cr,Pb和Cd三种元素的尼龙薄膜样品及玻璃纤维滤膜为研究对象,采用滤膜叠加的方式,通过XRF光谱仪测量不同样品厚度下薄膜样品的XRF光谱,根据测得的尼龙薄膜样品中Cr,Pb,Cd元素及玻璃纤维滤膜中Ca,As和Sr元素特征XRF性质的变化,研究样品厚度对薄膜法XRF光谱测量的影响。结果表明:薄膜样品厚度对不同能量区间上元素特征谱线荧光性质的影响并不相同。元素特征谱线能量越大,元素特征X射线荧光穿透滤膜到达探测器的过程中损失越少;但由薄膜样品厚度增加引起的基体效应却越强,相应特征谱线位置处的背景荧光强度就越大,因此样品厚度增加所引起的基体效应对薄膜法XRF光谱测量的灵敏度影响就越大。对于特征谱线能量较低(能量小于7 keV)的元素,以增加薄膜样品厚度的方式来增加待测组分的质量厚度浓度,并不能有效地提高薄膜法XRF光谱测量的灵敏度;对于特征谱线能量较高的元素(能量>7 keV),可以通过适当增加样品厚度以增加被测组分的质量厚度浓度的方式来提高XRF光谱测量的灵敏度,薄膜样品厚度在0.96~2.24 mm内,更有利于XRF光谱的测量与分析。该研究为大气及水体重金属薄膜法XRF光谱分析中薄样制备及富集技术提供了重要的理论依据。 相似文献
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依据矩形波导基模的场分布表达式和电磁边界条件,解析推导了插入金属薄膜后的矩形波导透射系数,建立了考虑介质衬底影响的金属纳米薄膜微波透射系数仿真计算方法及其方块电阻的微波测量方法.运用全波电磁仿真方法对金属纳米薄膜方块电阻的微波测量装置进行了仿真验证,结果表明透射系数幅度与方块电阻的对数之间呈线性关系.采用磁控溅射工艺分别在高阻硅和玻璃两种介质衬底表面制备了不同方块电阻值的银薄膜,并测量其微波透射系数.实测结果表明,提出的方法适用于方块电阻阻值为0.05—0.5?/square的金属薄膜.研究结果对于微纳制造领域的导电薄膜方块电阻表征具有参考价值. 相似文献
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Ge薄膜特性及其在光子计数成像系统中的应用 总被引:2,自引:1,他引:1
利用电子束真空蒸镀方法制作了Ge薄膜,用作感应读出方式光子计数成像系统的电荷感应层,研究了石英玻璃衬底和陶瓷衬底上Ge薄膜的结构特征、表面形态以及各种工艺参数对薄膜电阻的影响.X射线衍射(XRD)测试表明,两种衬底上沉积的Ge薄膜均为立方相非晶态.场发射扫描电子显微镜(FESEM)图像表明石英玻璃衬底上的薄膜致密平整,陶瓷衬底上的薄膜比较粗糙,厚度较薄时,陶瓷晶界处薄膜不连续导致电阻较大.通过改变沉积速率、薄膜厚度及采用退火的方法可以控制薄膜电阻.对比了采用不同阻值电荷感应层时系统的性能,发现阻值对探测器的分辨率影响小,对计数率影响较大. 相似文献
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Photoacoustic Spectroscopy (PAS) has been used to measure the thickness of thin SiO2 films grown on (100) Si wafers. The data are in reasonable agreement with a simple theoretical model. It suggests that photoacoustic Spectroscopy is complementary to optical interferometry, in that it is capable of giving quantitative estimates of thin transparent films on opaque substrates of low reflectivity via the transmitted fraction of the optical energy incident on the sample. Both theoretical and experimental results indicate that PAS can be very useful in the measurement of thin films on substrates of low reflectivity. 相似文献
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The Dewetting of thin polymer films (60–300 nm) on a
non-wettable liquid substrate has been studied in the vicinity of
their glass transition temperature. In our experiment, we observe a global
contraction of the film while its thickness remains uniform. We
show that, in this case, the strain corresponds to simple extension, and we verify that it is linear with the stress applied
by
the surface tension. This allows direct measurement of the
stress/strain response as a function of time, and thus permits the
measurement of an effective compliance of the thin films. It is,
however, difficult to obtain a complete viscoelastic
characterization, as the short time response is highly dependant on
the physical age of the sample. Experimental results underline the
effects of residual stress and friction when dewetting is analyzed
on rigid substrates. 相似文献
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Silver films were deposited on glass substrates under different deposition conditions, i.e. different film thicknesses, deposition rates and deposition angles. Their optical properties were measured by spectrophotometry in the spectral range of 185–3300 nm. The Kramers–Kronig method was used to analyze the reflectivity curves of the silver films to obtain their optical constants. The influence of substrate temperature on the microstructure of thin metallic films, the structure zone model (SZM), is well established, whereas there has been some previous work on the influence of film thickness and morphology, deposition rate and deposition angle on the microstructure and morphology of thin films. An effective medium approximation (EMA) analysis was used to establish the relationship between the atomic force microscopy results, SZM predictions and EMA results, and hence the optical properties of silver thin films. The predictions of the Drude free-electron theory are compared with experimental results for dielectric functions of Ag films produced under different deposition conditions. The real part of the dielectric constant increases with film thickness and decreases with increasing deposition rate and with increasing incidence angle, whereas the imaginary part of the dielectric constant decreases with increasing film thickness and deposition rate and with decreasing incidence angle over the whole energy range measured, including the interaband and interband regions. 相似文献
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Mechanical properties of thin films on substrates can be evaluated directly through nanoindentation. For a comprehensive study,
thin films should be characterized via Young’s modulus, yield stress and strain-hardening exponent at constant temperature.
In this paper, we evaluate these effects of thin films on silicon substrate through finite element analysis. Thin films, from
soft to hard relative to the silicon substrate, are investigated in three categories: soft films on hard substrates, soft
to hard films on no elastic mismatch substrates, and hard films on soft substrates. In addition to examining the load-displacement
curve, the normalized hardness versus normalized indentation depth is checked as well to characterize its substrate effect.
We found that the intrinsic film hardness can be acquired with indentation depths of less than 12% and 20% of their film thickness
for soft films on hard substrates and for soft to hard films on no elastic mismatch substrates, respectively. Nevertheless,
nanoindentation of hard films on soft substrates cannot determine the intrinsic film hardness due to the fact that a soft
substrate cannot support a hard film. By examining the von Mises stresses, we discovered a significant bending phenomenon
in the hard film on the soft substrate.
PACS 61.43.Bn; 62.20.-x; 68.03.Hj; 68.05.Cf; 68.08.De 相似文献
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针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度Ts和辉光放电前气体温度Tg的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜.
关键词:
椭偏测量
透射法
光学参数
氢化非晶硅薄膜 相似文献
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在陶瓷基底上利用电子束蒸镀方法制备了Si薄膜,用作感应读出方式光子计数成像系统的电荷感应层,并研究了薄膜的结构特征和表面形态.X射线衍射(XRD)测试和场发射扫描电子显微镜(FESEM)图像表明,沉积的Si薄膜为无定形态,由于陶瓷晶界的存在,薄膜较粗糙.搭建了相应的实验系统,对比了采用不同厚度Si薄膜时系统的空间分辨率、计数率、脉冲高度分布曲线等,发现薄膜的厚度对探测器的计数率影响较大.此外,实验还对比了采用相同电阻值的Si薄膜和常用的Ge薄膜时系统的性能.研究表明,采用Si薄膜时系统的畸变较小、计数率高 相似文献
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Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers 下载免费PDF全文
《中国物理 B》2019,(1)
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices. 相似文献