共查询到20条相似文献,搜索用时 125 毫秒
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单电子效应与单电子晶体管 总被引:2,自引:0,他引:2
由于半导体超微细加工技术的发展,在半径为几百nm的量子点结构上观察到由单个电子的阻塞和隧穿引起的电流振荡,分别称为库仑阻塞,单电子隧穿和库仑振荡,与此效应有关的现象还有库仑台阶,旋转门效应,旋转门器件可利用作为电流标准测量,单电子晶体管将是下世纪大容量存贮器的最好选择,单电子效应的研究将开辟一门新的“人造原子物理学”。 相似文献
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对单隧穿结和双隧穿结中的库仑阻塞现象进行了介绍,分析了其中电子隧穿的物理过程;然后探讨在单电子盒中如何利用库仑阻塞控制单电子隧穿的物理原理;最后介绍库仑阻塞效应在单电子晶体管中的具体应用及其发展前景. 相似文献
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李玲 Kaestner B Blumenthai M D Giblin S Janssen T J B M Pepper M Anderson D Jones G Ritchie D A 高洁 《物理学报》2008,57(3):1878-1885
除了直流负电压外,还在浅法刻蚀出的GaAs/AlGaAs量子线上的两个金属指形门上分别叠加两个相位相差π的正弦信号,从而对形成量子点的两个势垒作不等幅调制.在无源漏偏压的情况下,通过周期形成的量子点实现了单电子的搬运.由于新的半导体量子点单电子泵不是依赖库仑阻塞效应通过隧穿进行单电子输运,因此,该器件就不会受到固定隧穿时间引起的低工作频率限制.在1.7K温度下,频率达到3GHz仍然可以观测到量子化电流平台,对应的电流值达到0.5nA量级.这种新器件提供了实现高速度、高精度搬运单电子的另一种可能途径.
关键词:
单电子输运
单电子旋转门
单电子泵
量子化电流平台 相似文献
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用扫描隧道显微术实现室温下的单电子隧穿效应 总被引:2,自引:0,他引:2
单电子隧穿效应通常只能在低温下实现。最近,采用扫描隧道显微术在纳米尺度的范围内实现了室温单电子隧穿,清晰地观察到了库仑阻塞现象和库仑阶梯特性。这是单电子隧穿研究中的重大进展,将在简要叙术单电子隧穿物理过程的基础上予以介绍。 相似文献
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越来越多的人相信,发展新一代在原理上全新的电子器件是下一世纪电子工业的希望所在.在这一方面,近年来已有一个又一个的量子器件原型见诸报道;还有更多的设想和建议不断被提出来,引起人们浓厚的兴趣.现在,又有一种新型小尺寸器件--单电子晶体管在在向我们招手.根据这种器件的发展前景,有人甚至提出了单电子学这一崭新的学科.单电子晶体管是与库仑阻塞这一著名的物理现象联系在一起的. 相似文献
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We introduce the ab-initio framework for zigzag-edged graphene fragment based single-electron transistor (SET) operating in the Coulomb blockade regime. Graphene is modeled using the density-functional theory and the environment is described by a continuum model. The interaction between graphene and the SET environment is treated self-consistently through the Poisson equation. We calculate the charging energy as a function of an external gate potential, and from this we obtain the charge stability diagram. Specifically, the importance of including re-normalization of the charge states due to the polarization of the environment has been demonstrated. 相似文献
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基于单电子晶体管与金属氧化物半导体混合结构构造出一种一维离散混沌系统. 研究了单电子晶体管与金属氧化物半导体串联混合结构的电压传输特性,并建立了相应的N型分段线性函数模型. 基于该模型实现了一维离散映射系统,分析了它的一维映射过程、分岔图和Lyapunov指数谱等动力学特性. 最后利用单电子晶体管与金属氧化物半导体混合电路设计出该离散混沌系统的电路结构,仿真验证与理论分析一致. 研究结果表明,利用单电子晶体管与金属氧化物半导体混合结构设计的离散混沌电路不仅结构非常简单,功耗很低, 而且有利于混沌系统的集成和应用. 相似文献
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硅基半导体量子点中的自旋量子比特近几年来发展迅速,其单比特门与两比特门操作保真度已经突破了容错量子计算的阈值.在此基础上,如何构建硅基量子点二维阵列变得广受学界关注,然而二维阵列复杂的结构在器件制备和测量上均带来挑战.本文设计并成功制备了一种Si/SiGe异质结上的2×4结构八量子点二维阵列器件.借助输运测量方法测量了八量子点器件的全部电荷稳定性相图,并进一步地使用电荷感应调制测量方法得到了器件内的少电子区电荷稳定性相图,说明了对量子点电荷态的高灵敏度探测能力.此外,通过调控势垒电极展示了对量子点间隧穿耦合的调控作用并测量了多量子点耦合的电荷稳定性相图.本文的研究结果展示了使用Si/SiGe异质结构建自旋量子比特二维阵列的潜力,为未来硅量子点二维阵列的进一步扩展提供经验与参考. 相似文献
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对称双弹簧振子受迫、有阻尼横振动的混沌行为 总被引:4,自引:1,他引:3
对受周期外力驱动的对称双弹簧振子进行了研究,建立了系统的动力学方程,用线性稳定性分析方法讨论了平衡点附近邻域的稳定性,利用数值计算并结合多种分析方法,求解非线性方程和判断解的性质.通过改变系统参数,画出时域图、相图及分岔图等.计算分析和数值实验发现,这个简单的力学系统存在十分丰富的动力学行为(分岔、混沌).理论分析和数值实验结果一致. 相似文献
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S. A. Dagesyan V. V. Shorokhov D. E. Presnov E. S. Soldatov A. S. Trifonov V. A. Krupenin O. V. Snigirev 《Moscow University Physics Bulletin》2017,72(5):474-479
We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (~20 meV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only. 相似文献
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M. Pierre M. Hofheinz X. Jehl M. Sanquer G. Molas M. Vinet S. Deleonibus 《The European Physical Journal B - Condensed Matter and Complex Systems》2009,70(4):475-481
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives
new insights and predictions readily observable in many experimental systems. We show that a single background charge is enough
to give lines of differential conductance in the stability diagram of the quantum dot, even within undistorted Coulomb diamonds.
It also suppresses the current near degeneracy of the impurity charge, and yields negative differential lines far from this
degeneracy. We compare this picture to two other accepted explanations for lines in diamonds, based respectively on the excitation
spectrum of a quantum dot and on fluctuations of the density-of-states in the contacts. In order to discriminate between these
models, we emphasize the specific features related to environmental charge traps. Finally we show that our model accounts
very well for all the anomalous features observed in silicon nanowire quantum dots. 相似文献
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The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III–V quantum large-scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III–V semiconductor-based hexagonal nanowire networks controlled by nanoscale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single-electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature. 相似文献
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It is seen that in single-electron systems with finite-size particle distributions there is a direct correlation between a given distribution and its single-electron conductance peak spacing. In this paper we discuss the geometry, capacitance, and size distribution of particles in single-electron tunnel systems, the latter two as manifest in their tunneling characteristics. 相似文献
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E. S. Demidov 《JETP Letters》2000,71(9):351-354
Discrete electron tunneling through transition-metal atoms is considered. It is emphasized that a metal grain in the known single-electron systems can be replaced by a d-or f-atom. A response speed within the attosecond range, a working temperature on the order of the melting point of refractory substances, and an atomic level of integration are attainable in this case. Experimental realizations of single-electron solid-state structures with d-or f-atoms are discussed. 相似文献
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《Superlattices and Microstructures》2000,27(5-6):607-611
Multiple-valued logic devices can be constructed compactly by utilizing quantized behavior of single-electron circuits. As an example, a single-electron multiple-valued Hopfield network solving optimization problems is designed. Computer simulation shows that the network can successfully converge to its optimal state that represents the solution to the problem. 相似文献