同步辐射软X射线能区Ar原子光致电离截面的研究

利用北京同步辐射装置3W1B光束线产生的单色光作为光源,流气式无窗低压强双电离室作为气体容器,选择氩气作为实验气体,使用合适的公式和软件,实验测定了能量从180到2?70eV范围内若干压强点处光致电离截面与能量的关系曲线.发现在氩原子的L吸收边附近光致电离截面与压强有关:压强越低,截面越大.实验结果与理论结果进行了对比,结果表明,在15?0—2?0?5eV能量范围,理论与实验符合良好,但是在氩原子的L吸收边附近由于束线分辨率的原因,理论与实验有一定偏差.     

锗在吸收边附近的压力—折射率系数

目前半导体锗在吸收边附近(1550 nm)的压力-折射率系数在实验和理论上并未研究清楚.本文通过测量在不同压力下镀在光纤端面的高结晶度锗薄膜的反射率,来计算得到锗在吸收边附近的压力-折射率系数.本文的实验结果显示,锗在吸收边附近出现反常色散现象,即折射率随能量变化呈正相关,并且其压力-折射率系数出现反常,为正值,这是由于多晶结构中的激子吸收所引起.通过引入描述激子色散的临界点模型,得到锗在吸收边附近的反常色散范围和压力-折射率系数呈正值的范围.本文的结果将有助于基于锗薄膜的通信C波段光学器件的研究.     

金属有机化学气相淀积技术制备GaMnN薄膜材料光学性质研究

研究由MOCVD 技术制备的 GaMnN 外延薄膜光吸收谱.实验发现Mn掺杂后较未掺杂GaN吸收系数在近紫外区增加,在吸收谱低能区144 eV附近观察到吸收峰,吸收系数随Mn浓度的增加而增大.实验结果与基于密度泛函理论的第一性原理计算结果一致,结合理论计算分析认为144 eV附近的吸收峰源于Mn³⁺离子e态与t₂态间的带内跃迁⁵T₂→⁵E. 关键词： GaMnN MOCVD 密度泛函理论 光学性质     

纳米锗颗粒镶嵌薄膜的吸收光谱研究

用离子束溅射技术和热处理方法，制备出颗粒尺寸和镶嵌密度均可控制的高质量Ｇｅ－ＳｉＯ２纳米颗粒镶嵌薄膜，在室温下测量了不同粒度纳米锗颗粒镶嵌薄膜样品的吸收光谱，观测到在可见光区有较强的光吸收和吸收带边蓝移。研究表明：镶嵌在经缘介质薄膜中的纳米锗颗粒的能量带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程序相应增大。     

表面修饰的二氧化钛纳米材料的结构相变和光吸收性质

采用胶体化学法制备表面修饰的二氧化钛纳米材料，并使用XRD，TEM，UV-vis光谱等手段研究表面修饰的二氧化钛纳米微粒的结构相变和光吸收性质.结果表明，表面修饰可以改变二氧化钛的晶化行为、加快锐钛矿→金红石的相变进程、引起二氧化钛纳米粒子的光吸收带边大幅度红移.光吸收系数与光子能量之间关系的计算分析显示，在吸收带边附近，二氧化钛纳米微粒溶胶及二氧化钛纳米薄膜的(αhν)^1/2vs hν(间接)和(αhν)² vs hν(直接)均呈线性关系，其间接和直接光学带隙能可以分别通过外推这种线性关系来测量. 关键词： 二氧化钛纳米材料 结构相变 表面改性 光吸收     

BaO半导体薄膜在外加垂直表面电场作用下的近紫外光吸收增强现象研究

通过对真空蒸发沉积制备的BaO半导体薄膜在外加垂直表面电场作用下光吸收特性的测试, 实验上观察到BaO薄膜在近紫外波段的光吸收随电场强度的增加而明显增强.理论分析表明, BaO半导体薄膜在外加垂直表面电场作用下发生能带倾斜,价带电子隧穿带间位垒而在带隙 中出现的概率增加,近紫外波段光吸收增强是光子协助隧道穿越的结果.不同能量光子激发 下电场作用引起的BaO薄膜光吸收增强现象是夫兰茨-凯尔迪什(Franz-Keldysh)效应和斯塔 克(Stark)效应在金属氧化物半导体材料上的体现. 关键词： 金属氧化物半导体薄膜 光子协助隧道效应 电致吸收 夫兰茨-凯尔迪什效应     

光声光谱法研究光学薄膜的吸收特性

本文以“一维热流活塞模型”为基础,推导出薄膜光声表达式,光声信号的幅值正比于吸收率.测量了透明基底上光学薄膜的光声吸收谱,实验结果与理论一致.尤其是测量弱吸收薄膜的吸收谱时,具有较高的灵敏度和实用性.     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜，并硫化合成FeS₂. 采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构. 结果表明，合成的FeS₂薄膜，在费米能级附近，有较强的Fe 3d态密度存在，同时，在价带谱中2—10eV处有强度较大的S 3p态密度存在；Fe的3d轨道在八面体配位场作用下分别为t_2g和e_g轨道，实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS₂价带结构中导带宽度约为2.4eV，导带上方仍存在第二能隙，其宽度约为2.8eV. 关键词： 磁控溅射 二硫化铁 X射线吸收近边结构 电子结构     

氢化硅薄膜光吸收近似特性研究

利用等离子体化学气相沉积系统在直流电压源和射频源的双重激励下,以康宁7059玻璃为衬底制备了氢化硅薄膜．过测定氢化硅薄膜Raman光谱,对薄膜微结构进行了表征;建立氢化硅薄膜的光吸收模型,计算出薄膜的光吸收系数和光学带隙,和实验结果基本一致,说明该模型符合实验结果;并利用该模型计算的光吸收系数和光学带隙,结合AMPS软件对设计的太阳电池结构进行了模拟,给出的I-V特性曲线变化趋势与实验结果基本符合,同时对实验结果与模拟结果存在差异的原因进行了分析,并给出合理解释． 关键词： 氢化硅薄膜 光吸收系数 光吸收模型     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜,并硫化合成FeS2.采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构.结果表明,合成的FeS2薄膜,在费米能级附近,有较强的Fe 3d态密度存在,同时,在价带谱中2-10eV处有强度较大的S 3p态密度存在;Fe的3d轨道在八面体配位场作用下分别为t2g和eg轨道,实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS2价带结构中导带宽度约为2.4eV,导带上方仍存在第二能隙,其宽度约为2.8eV.     

MEASUREMENTS OF Fe AND Cu K-Shell IONIZATION CROSS SECTIONS BY SLOW ELECTRON IMPACT

ＭＥＡＳＵＲＥＭＥＮＴＳＯＦＦｅＡＮＤＣｕＫ－ＳｈｅｌＩＯＮＩＺＡＴＩＯＮＣＲＯＳＳＳＥＣＴＩＯＮＳＢＹＳＬＯＷＥＬＥＣＴＲＯＮＩＭＰＡＣＴＬｉＴａｉｈｕａＡｎＺｈｕＬｕｏＺｈｅｎｇｍｉｎｇＣｅｎｔｅｒｆｏｒＲａｄｉａｔｉｏｎＰｈｙｓｉｃｓ，Ｉｎｓ...     

Heavy fragment production cross sections from 1.05 GeV/nucleon 56Fe in C, Al, Cu, Pb, and CH2 targets

We have obtained charge-changing cross sections and partial cross sections for fragmentation of 1.05 GeV/nucleon Fe projectiles incident on H, C, Al, Cu, and Pb nuclei. The energy region covered by this experiment is critical for an understanding of galactic cosmic ray propagation and space radiation biophysics. Surviving primary beam particles and fragments with charges from 12 to 25 produced within a forward cone of half-angle 61 mrad were detected using a silicon detector telescope to identify their charge and the cross sections were calculated after correction of the measured yields for finite target thickness effects. The cross sections are compared to model calculations and to previous measurements. Cross sections for the production of fragments with even-numbered nuclear charges are seen to be enhanced in almost all cases.     

Investigations of aluminum films with synchrotron radiation of wavelengths 500 to 1000 Å

Measurements of the photocurrent from thin Al cathodes in a windowless electron multiplier as a function of wavelength, polarization, angle of incidence, and film thickness have been carried out in the extreme vacuum ultraviolet. A normal incidence monochromator utilizing synchrotron radiation provided highly polarized light. A marked difference is found between the photocurrent measured during irradiation of thin films with “s” and “p” polarized light at wavelengths near the Al plasma wavelength (835 Å). For films thicker than about 500 Å pronounced interference effects are found in both “p” and “s” light at wavelengths less than the plasma wavelength. The observations can be explained by assuming the photocurrent is related to the photon density (electromagnetic energy density) in the photocathode. Calculations of the energy density in films irradiated with light give the structure found in the measured photocurrent. The measurements indicate our monochromator yields light with a degree of polarization consistent with the calculated polarization of the synchrotron radiation incident upon our grating (about 85%).     

退火对ZnO:Al薄膜光致发光性能的影响

 采用溶胶-凝胶工艺在石英衬底上制备ZnO:Al（AZO）薄膜，通过不同温度的退火处理，研究了退火对AZO薄膜结构和光致发光特性的影响。XRD图谱表明：所制备的薄膜具有c轴高度择优取向，随着退火温度的升高，(002)峰的强度逐渐增强，同时(002)峰的半高宽逐渐减小,表明晶粒在不断增大。未退火样品的光致发光（PL）谱由361 nm附近的紫外带边发射峰和500 nm附近的深能级发射峰组成。样品经退火后，以500 nm为中心的绿带发射逐渐减弱，而带边发射强度有所增强,并且逐渐红移到366 nm附近，与吸收边移动的测试结果相吻合。对经过不同时间退火的样品分析表明，AZO薄膜的发光特性与退火时间也有很大关系，时间过短可见波段的发射较强，但时间过长会使晶粒发生团聚，导致紫外发射峰强度减弱。     

keV质子辐照Kapton/Al的能量传输过程

采用TRIM和SRIM2003软件模拟计算了10—300keV能量区间质子辐照Kapton/Al的能量传输过程. 依据模拟结果选取了辐照能量参数, 在室温真空条件下, 采用空间综合辐照设备对Kapton/Al进行了质子辐照. 借助于表面红外光谱技术, 对Kapton的重要官能团特征峰做了定量分析, 通过特征峰处吸光度的变化得到了典型分子键的损伤截面. 平均损伤截面和电子能损的强烈依赖关系及TRIM计算结果一致说明keV质子辐照Kapton/Al的辐照损伤主要来自电子能损效应. 太阳吸收比的变化趋势和模拟结果都表明在入射能量80keV附近, 质子辐照Kapton/Al的辐照效应最大.     

Absolute triple differential cross sections for electron impact ionization of helium: Comparison between experimental and theoretical results at 256 eV collision energy

Triple differential cross sections have been measured for electron impact ionization of helium at 256 eV collision energy, 3 eV energy of the slow outgoing electrons and scattering angles of the fast outgoing electrons of 4°, 6°, 8°, and 10°. The data have been put on absolute scale by extrapolating the generalized oscillator strength to zero momentum transfer. In this optical limit the triple differential cross sections can be normalized by using the well-known cross sections for photoionization. The experimental data are compared with results of different theoretical approaches. For nearly all calculated curves rather good agreement with the measurements is obtained for the relative shape of the binary peak, while often its absolute cross section is overestimated. Concerning the recoil peak, larger discrepancies are found with respect to both, relative shapes and cross sections. A perceptible improvement can be stated for calculations which have been performed in a distorted wave approximation and in second Born approximation.     

A Study of Intermediate Energy Proton-^16O Elastic Scattering Based on the α-Particle Model

In the framework of KMT multiple scattering theory, an optical potential for the intermediate energy proton-160 elastic scattering is presented based on the α particle model of 160. The differential cross sections, the analyzing powers, and the total cross sections of the intermediate energy proton-160 scattering have been calculated by using the obtained optical potential. The main features of the measured angular distributions of the cross section and the analyzing power can be well described. The calculated total cross sections are in good agreement with the experimental data at energies below 0.7 GeV and underestimate the data about 8% at higher energies.     

Comparative analysis of the resonant Raman cross sections of pure samples and oxides

Monochromatic synchrotron radiation was used to study the Raman effect on pure samples of Mn, Fe, and Cu and on oxides such as Mn₂O₃, Fe₂O₃, CuO and Cu₂O. Energy scannings were carried out for different ranges of energies near the absorption edge of the target element. Theoretical models for the energy distribution of the Raman scattered photons, convoluted with the instrument function, were used to determine the resonant Raman scattering (RRS) cross sections as a function of the incident energy. The results indicate that RRS cross sections for pure samples are similar to those for oxides for the same energy difference from the respective edge, showing that the Raman scattering takes place in the same way in both kinds of samples. Copyright © 2008 John Wiley & Sons, Ltd.     

Calculations of double-differential triton emission cross sections at 62-MeV proton-induced reactions

Double-differential cross sections (d ² σ/dΩd?) have been calculated and analyzed for triton production in proton-induced reactions on ²⁷Al, ^54,56Fe, ¹⁹⁷Au, and ²⁰⁸Pb target nuclei at incident energy of 62 MeV. Calculations of double-differential cross sections have been performed using nuclear models implemented in the TALYS 1.2 code. The calculated results of the double-differential cross sections for triton emission have been compared with the existing experimental data.     

蓝宝石的近边精细结构和电子数布居分析

利用透射电子显微镜的电子能量损失谱研究了蓝宝石AlL和OK近边精细结构，给出了Al原子和O原子的电子数布居分析及不同分截面的比较.通过考虑一个原子在均匀固体中的电离来解释近边电离区中的元素效应.应用推广的Hückel分子轨道理论及反映了晶体变换对称性影响的布洛赫定理来计算电子从内层向价层的跃迁，从而解释了近边区域的化学效应.还考虑了附加的化学效应，这来自激发原子附近的原子产生的外行平面波弹性后向散射，由此产生电离区中的所谓延展精细结构.理论计算结果与实验得到的蓝宝石单相区电子能量损失谱符合较好. 关键词：