强场物理与快点火靶

氘代聚合物空心微球采用多次乳化技术制备。氘代聚合物采用氘代苯乙烯单体的本体自由基聚合反应制备，重均分子量Mw=189000，分散度d=2．72。采用上述氘代聚苯乙烯制备的空心微球无色透明。研究了聚合物分子量对微球直径与壁厚的影响。与普通聚苯乙烯微球相比，采用窄分布聚苯乙烯制备的空心微球的直径与壁厚较小，并且分布较窄。     

GDP/D-GDP化学结构与力学性能的研究

利用低压等离子体增强化学气相沉积技术制备碳氢辉光放电聚合物(GDP)和全氘代辉光放电聚合物(D-GDP)薄膜。利用表面轮廓仪、傅里叶红外光谱仪和纳米压痕技术对制备的样品进行表征,讨论了GDP/D-GDP薄膜的沉积速率、化学结构和力学性能在ICF物理实验用靶应用中的优缺点。结果表明:GDP/D-GDP薄膜的沉积速率都随反应气体流量比例近线性增加,GDP的沉积速率达到2.6μm,D-GDP的沉积速率达到1μm,GDP的沉积速率远大于D-GDP的沉积速率;D-GDP薄膜内部的交联化程度较弱,D-GDP更有利于靶丸内燃料的红外均化;GDP的力学性能明显优于D-GDP,更有利于ICF物理实验用靶的燃料填充与装配操作。     

功率对氘代辉光放电聚合物结构和力学性能的影响

采用射频辉光放电聚合技术,在低压等离子体聚合装置上开展在5~20 W功率下氘代辉光放电聚合物薄膜的制备及性能研究。利用傅里叶变换红外吸收光谱仪表征薄膜的化学结构,讨论了功率变化对其官能团结构的影响规律。利用元素分析仪和纳米压痕仪表征薄膜中氘原子的相对含量和薄膜的力学性能。研究表明:随着功率的升高,薄膜中的氘含量先升高后降低,在10W时达到最大,薄膜中SP3 CD的相对含量增加,SP3 CD2的相对含量减小;聚合物薄膜的硬度和杨氏模量均随功率的增加而减小。     

基片温度和退火对DdIn2O4薄膜光学性质和载流子浓度的影响

对射频反应性溅射Cd-In合金靶制备的透明导电CdIn2O4薄膜，研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱，光学常数和载流子浓度的影响。结果表明：提高基片温度减少了薄膜的载流子浓度，退火增加了薄膜的载流子浓度。随着基片温度提高，薄膜折射率n和消光系数κ的短波峰将逐渐蓝移，而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中，这一现象对于实时监控具有极为重要的意义。     

基片温度和退火对CdIn2O4薄膜光学性质和载流子浓度的影响

对射频反应性溅射Cd In合金靶制备的透明导电CdIn2 O4薄膜 ,研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱 ,光学常数和载流子浓度的影响。结果表明 :提高基片温度减少了薄膜的载流子浓度 ,退火增加了薄膜的载流子浓度。随着基片温度提高 ,薄膜折射率n和消光系数κ的短波峰将逐渐蓝移 ,而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2 O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中 ,这一现象对于实时监控具有极为重要的意义。     

聚合物基片对柔性有机发光器件性能的影响

以聚合物基片柔性ITO膜为透明电极，制备了ITO／TPD／Alq3／Al结构柔性有机发光器件，并与在相同条件下制备的玻璃基片相同结构器件作了比较。研究了不同基片对有机材料及器件性能的影响，指出选择不易吸湿、耐温高、热胀系数小的聚合物材料，提高柔性ITO膜的附着力和导电性，结合柔性ITO膜的具体特性。优化有机层的蒸镀条件，是提高柔性有机发光器件发光亮度和稳定性的重要途径。     

全氘代对二乙烯基苯泡沫的制备

全氘代聚合物泡沫作为一种特殊的低密度、微孔聚合物泡沫，在激光惯性约束聚变（ICF）研究中除了直接用于ICF靶材料，以增加单位靶中热核燃料的密度外，还可用在冷冻靶中以提高液体氘氚的浸润性及分布的均匀性，减小瑞利一泰勒界面不稳定性，以加强中子和分光镜的测量，研究和诊断内爆物理实验等。     

溶液浇铸法制备氘代聚乙烯薄膜

 采用改进的溶液浇铸法,用氘代聚乙烯为原料,制备了厚度为100, 200, 400 μm的氘代聚乙烯薄膜。研究了溶液温度、干燥温度、真空加热温度及时间等因素对成膜性、薄膜均匀性和透明性的影响,确定了最佳工艺条件：溶液温度120～130 ℃,干燥温度80～100 ℃,加热温度120 ℃,加热时间1 h。3维视频显微镜和原子力显微镜表征结果表明:制备的薄膜透明性较好,厚度较均匀;薄膜表面起伏较小。     

溶液浇铸法制备氘代聚乙烯薄膜

采用改进的溶液浇铸法,用氘代聚乙烯为原料,制备了厚度为100, 200, 400 μm的氘代聚乙烯薄膜。研究了溶液温度、干燥温度、真空加热温度及时间等因素对成膜性、薄膜均匀性和透明性的影响,确定了最佳工艺条件:溶液温度120～130 ℃,干燥温度80～100 ℃,加热温度120 ℃,加热时间1 h。3维视频显微镜和原子力显微镜表征结果表明:制备的薄膜透明性较好,厚度较均匀;薄膜表面起伏较小。     

辉光放电聚合物薄膜的红外性质研究

为了实现惯性约束聚变 (ICF)点火,需要制备出均匀的高密度燃料靶。对于氘氘 (DD) 冰层,红外均化技术可用于改善其内表面粗糙度。本文利用红外光谱仪和红外显微镜研究了辉光放电聚合物(GDP)薄膜和靶球的红外吸收性质,得到了GDP薄膜材料特定波长处的红外吸收系数。通过比较薄膜材料和靶球的红外吸收,证实了热处理可以降低GDP材料中的氧化位点,从而抑制羟基(—OH)峰的形成,优化DD冰层的红外均化效果。利用所得实验数据对DD均化实验中红外均化积分球所需要的红外功率和国家点火装置(national ignition facility, NIF)标准靶的红外透射率进行了估算,计算结果对DD冰红外均化实验具有重要指导作用。     

Substrate and chain size dependence of near surface dynamics of glassy polymers

We use nanohole relaxation to study the surface relaxation of films of glassy isotactic poly (methyl methacrylate) (i-PMMA) films. These measurements allow us to obtain the time dependent relaxation function at a number of different sample temperatures for the first 2-3 nm of the free surface in a system often used as a model system for the effect of the substrate on thin film dynamics. The surface is observed to relax at temperatures up to 42 K below the bulk Tg value, even on systems where the thin film Tg is known to be greater than the bulk value. We are able to determine the range over which the substrate directly affects the free surface relaxation, and determine a surprisingly large (Mw independent) limiting thickness of approximately 180 nm where the free surface relaxation is not affected by the substrate. For thick films (h>200 nm) we find an unexpected linear Mw dependence of the near surface relaxation time.     

ICF氘代固体靶的研制

 以自制全氘代苯乙烯单体(氘代率99%)为原料, 以偶氮二异丁腈为引发剂, 经自由基本体聚合反应, 先制得全氘代聚苯乙烯, 最后采用乳液微封装技术制得了直径150～450μm、壁厚2～15μm、球形度≥99.5%、同心度95%～98%、表面粗糙度＜30nm的ICF固体靶用空心微球。介绍了制备工艺,并对全氘代聚笨乙烯分子量及其分布的控制,微球壁内气泡形成机理,微球储存稳定性等进行了初步探讨。     

Glass transition of miscible binary polymer-polymer thin films

The average glass transition temperatures, Tg, of thin homopolymer films exhibit a thickness dependence, Tg(h), associated with a confinement effect and with polymer-segment-interface interactions. The Tg's of completely miscible thin film blends of tetramethyl bisphenol-A polycarbonate (TMPC) and deuterated polystyrene (dPS), supported by SiO(x)/Si, decrease with decreasing h for PS weight fractions phi >0.1. This dependence is similar to that of PS and opposite to that of TMPC thin films. Based on an assessment of Tg(h, phi), we suggest that the Tg(h, phi) of miscible blends should be rationalized, additionally, in terms of the notion of a self-concentration and associated heterogeneous component dynamics.     

Modulation of refractive index and thickness of poly(methyl methacrylate) thin films with UV irradiation and heat treatment

This paper reports changes in refractive index and thickness of spin-coated poly(methyl methacrylate) (PMMA) thin films upon irradiation by a conventional high-pressure mercury UV lamp. Significant increase in refractive index and reduction in thickness are detected. Index modulations of greater than 0.01 are achieved in the thin films after 4 min of irradiation. The thickness reduction of an irradiated PMMA film is consistent with its weight loss. This is caused by the escape of the volatile molecules generated during the irradiation process. A slight increase in the refractive index is also found in the film, heat-treated above its glass transition temperature (Tg). This thermal effect is detected in the UV irradiation process. We propose three possible aliphatic structures that are formed during the photochemical reaction and may exist in the main chain of irradiated PMMA after the irradiation. Their refractive indices in aggregate state are greater than that of PMMA based on an evaluation using the Lorentz-Lorenz equation. This is suggested to be an important reason for the refractive index increase in the UV-irradiated PMMA films. A UV-irradiated film, heat-treated above its Tg, has a rough surface with many tiny holes as illustrated by atomic force microscopy. These holes are attributed to the evaporation of the small molecules generated during the irradiation process.     

Probing slow dynamics in supported thin polymer films

We have used variable cooling rate ellipsometric measurements to probe the slow dynamics in thin supported polystyrene films. For the slowest cooling rates (approximately 1 K/min) the measured Tg values are reduced below the bulk value with the measured Tg of 341 K for a 6 nm film. As the cooling rate is increased the Tg reductions become smaller until at cooling rates >90 K/min there is only slight evidence for a film-thickness-dependent Tg value. By relating the cooling rate to a relaxation time, we show that the relaxation dynamics of the thin films appears to become Arrhenius with an activation energy that decreases with decreasing film thickness. We discuss this in terms of a possible connection to a length scale for cooperative motion. Finally, the results can be used to resolve a number of outstanding contradictory reports in the literature.     

基底对光学薄膜弱吸收测量的影响

 对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda—900分光光度计测量了K9和石英基底的Ti₃O₅单层膜的吸收值，将该组样品作为定标片；用表面热透镜装置分别测量了BK7和石英空白基底及HfO₂，ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果，表明在低频测量时需要用与测量样品同种基底的定标片定标；不同厚度样品的测量结果表明，在不能严格满足热薄条件时,测量结果需引入修正值。     

K9和石英玻璃基片上Au膜真空紫外反射特性研究

采用离子束溅射法,分别在经过不同前期清洗方法处理过的K9及石英玻璃光学基片上,选择不同的镀膜参量,镀制了多种厚度的Au膜。对镀制的Au膜在真空紫外波段较宽波长范围内的反射率进行了连续测量。测试结果表明:辅助离子源的使用方式、Au膜厚度对反射镜的反射率有重大影响。基片材料、镀前基片表面清洗工艺等对反射率也有一定影响。采用镀前离子轰击,可显著提高Au膜反射率及膜与基底的粘合力;获得最高反射率时的最佳膜厚与基片材料、镀膜工艺密切相关。对经过离子清洗的石英基片,膜厚在30 nm左右反射率最高;比较而言,石英基片可获得更高的反射率;辅助离子源的使用还显著影响获得最高反射率时对应的最佳膜厚值,且对K9基片的影响更显著。     

Effects of epitaxial films of nanometric thickness on the X-ray photoelectron diffraction intensities from substrates

The effects on the X-ray photoelectron diffraction intensities from the substrate produced by epitaxial NiO(0 0 1) films of various thickness deposited on Ag(0 0 1) were investigated. The variations in the Ag XPD curves induced by the NiO films can be explained in terms of multiple scattering of the electrons emitted by the substrate atoms along the close-packed rows of the overlayer. Intensity minima in the XPD curves from the substrate in correspondence to intensity maxima in the XPD curves from the overlayer are observed when the thin film is commensurate with the substrate. For films of suitable thickness, the analysis of XPD curves from the substrate allows one to get information about the structure of the film and of the film–substrate interface.     

Strain relaxation of CdTe films growing on lattice-mismatched substrates

We have deposited CdTe films by laser-assisted epitaxy approach and investigated the influence of substrate and film thickness on the film properties. Grown on Si(001), GaAs(001), and quartz substrates; the CdTe films exhibit preferential orientation along the cubic CdTe(111) direction. When the films are thin (<500 nm), a blueshift of the band gap and splitting of valence bands were observed. These results are attributed to the existence of residual strains induced by mismatch of the film lattice constant with that of the substrate, and by their difference in thermal expansion coefficients. The bulk band-gap energy of 1.5 eV was achieved on the surface of thick CdTe films grown on Si(001) substrate, indicating that strain was almost completely relaxed in this case. Our results demonstrate that by a proper selection of substrate and film thickness it is possible to grow film semiconductors with band gap approaching those of bulk crystals.     

Hydrophilicity of amorphous TiO2 ultra-thin films

The UV-light-induced hydrophilicity of amorphous titanium dioxide thin films obtained by radio frequency magnetron sputtering deposition was studied in relation with film thickness. The effect of UV light irradiation on the film hydrophilicity was fast, strong and did not depend on substrate or thickness for films thicker than a threshold value of about 12 nm, while for thinner films it was weak and dependent on substrate or thickness. The weak effect of UV light irradiation observed for the ultra-thin films (with thickness less than 12 nm) is explained based on results of measurements of surface topography, UV-light absorption and photocurrent decay in vacuum. Comparing to thicker films, the ultra-thin films have a smoother surface, which diminish their real surface area and density of defects, absorb partially the incident UV light radiation, and exhibit a longer decay time of the photocurrent in vacuum, which proves a spatial charge separation. All these effects may contribute to a low UV light irradiation effect on the ultra-thin film hydrophilicity.