高功率激光宽光谱减反膜的溶胶-凝胶旋转法制备工艺

 采用溶胶-凝胶法用旋转镀膜工艺在K9玻璃基片上制备出了SiO₂和有机硅单层减反膜以及有机硅-SiO₂双层减反膜。考察了旋转速度对SiO₂和有机硅单层膜的中心透射波长、膜层折射率等基本光学性质的影响，实验确定了双层膜的涂敷工艺。透射光谱测量表明，采用本文工艺条件制备的有机硅 SiO₂双层膜在430～800nm范围内透射率达99％以上。     

磷酸盐激光玻璃聚(CH3)2SiO/SiO2防潮膜改性研究

 采用溶胶-凝胶方法制备的(CH₃)₂Si(OC₂H₅)₂预聚体涂膜液中，掺入碱催化的SiO₂悬胶体涂膜液，采用旋涂法在掺钕磷酸盐激光玻璃棒端面涂制了改性的防潮膜。当涂膜液中(CH₃)₂Si(OC₂H₅)₂和SiO₂物质的量之比为1∶1时，热处理后的膜层耐摩擦性能明显改善；表面粗糙度的均方根值为1.245 nm；膜层激光破坏阈值大于15 J/cm²(1 053 nm，1 ns)；在80 ℃和95%RH的封闭环境中静置336 h，膜层的透过率、接触角基本不变。结果证明膜层具有稳定的疏水结构和很好的防潮性能，膜层强度增加，耐磨擦能力提高，膜层使用期延长。     

高抗激光损伤阈值介孔SiO2 减反射膜

 用P123作模板剂,通过正硅酸乙酯的水解缩聚和溶剂蒸发自组装过程在K9玻璃上制备介孔SiO₂膜。应用FT-IR,XRD,N₂ 吸附-脱附,AFM和UV-Vis表征手段研究了薄膜的介孔结构和光学性能,并使用“R-on-1”模式,以Nd:YAG脉冲激光（9.2 ns, 1 064 nm）测试了薄膜的激光损伤阈值。结果表明:所镀制单层介孔SiO₂膜具有规整的2D p6 mm长周期结构,为SBA-15型,膜层表面比较平整（均方根粗糙度为2.923 nm）,在1 064 nm处的透过率为99.5%, 换算为激光脉宽为1 ns时,膜层的激光损伤阈值为21.6 J/cm²,显示出了较好的减反性能和抗激光损伤性能。     

溶胶-凝胶法制备ZrO2/SiO2双层减反硬膜

以锆酸丙酯[Zr(OPr)4]、正硅酸乙酯(TEOS)为原料, 用溶胶-凝胶(sol-gel)提拉法涂膜, 制备高透过的λ/ 4～λ/ 4型ZrO2/SiO2双层减反膜.该减反膜的表面均匀, 均方根(RMS)粗糙度为1.038 nm, 平均粗糙度(RA)为0.812 nm.制备的双层减反膜具有很好的减反效果, 在石英玻璃基片二面涂膜, 在激光三倍频波长351 nm处透射比达到99.41%, 比未涂膜石英玻璃基片的透射比提高了6.14%;在基频波长1053 nm处透射比达到99.63%, 比未涂膜K9光学玻璃基片的透射比提高了7.67%.膜层具有较高的激光损伤阈值, 在激光波长为1053 nm, 脉冲宽度为1 ns时, 薄膜的激光损伤阈值达到16.8 J/cm2.膜层具有良好的耐擦除性能.     

物理法和化学法制备的单层ZrO2膜的激光损伤行为差异

 分别采用电子束热蒸发技术和溶胶-凝胶技术在K9基片上镀制了光学厚度相近的ZrO₂单层薄膜,测试了两类薄膜的激光损伤阈值。分别采用透射式光热透镜技术、椭偏仪、原子力显微镜和光学显微镜研究了两类薄膜的热吸收、孔隙率、微观表面形貌、激光辐照前薄膜的杂质和缺陷状况以及激光辐照后薄膜的损伤形貌。实验结果表明：两类薄膜的不同损伤形貌与薄膜的热吸收与微观结构有关， 物理法制备的ZrO₂膜结构致密紧凑，膜层的杂质和缺陷多；化学法制备的ZrO₂膜结构疏松多孔，膜层纯净杂质少，激光损伤阈值达26.9 J/cm²；因物理法制备的ZrO₂膜拥有更大的热吸收(115.10×10^-6)和更小的孔隙率(0.20)，其激光损伤阈值较小(18.8 J/cm²)，损伤主要为溅射和应力破坏，而化学法制备的ZrO₂膜的损伤主要为剥层。理论上对实验结果进行了解释。     

酸碱分步催化对溶胶-凝胶ZrO2膜光学性能的影响

 以丙醇锆作为前驱体,利用酸碱分步催化法制备了ZrO₂溶胶,用粒度仪检测胶体粒度;用N₂吸脱附表征凝胶的结构;采用旋转镀膜法在K9基片上镀制单层ZrO₂薄膜;用分光光度计和椭偏仪检测膜层的透过率、折射率及膜层厚度;用红外光谱仪检测胶体内部粒子间化学键状态。实验结果发现,在脉宽1 nm,波长1 064 nm时,采用此种胶体镀制的单层ZrO2膜层折射率达到1.74,单层膜损伤阈值为9.0 J/cm²,表明该方法集中了酸与碱两种催化方式的优点,一定程度上提高了膜层的光学性能。     

Sc2O3替代层在532 nm高反膜中的应用

 将Sc₂O₃替代层引入到532 nm高反膜(HfO2/SiO2)n中,利用Sc₂O₃在盐酸中具有较好的溶解性这个特点,把膜层与基片脱离,以方便基片返修,缩短返修周期,降低成本。能量色散谱元素测试表明,脱离后Sc元素残留率为0。用Lamada900分光光度计、WykoNT1100轮廓仪和ZYGO干涉仪分别表征了替代层引入对高反膜的光谱、表面粗糙度和应力的影响,并测试了膜系在532 nm的激光损伤阈值的变化,结果表明Sc₂O₃替代层的引入对高反膜的性能几乎没有负面影响。     

超高阈值Pick-off反射镜的研制

 采用水中抛光技术抛制了90mm×60mm×10 mm的K₉玻璃基片,表面粗糙度达1nm。在APS1504镀膜机上,摸索了电子束蒸发镀膜的最佳工艺条件,较稳定地在该超光滑玻璃表面上镀制了对波长1054 nm、入射角45°、反射率R≥99.5%的反射膜。膜层的抗激光损伤阈值可达26 J/cm²(1054nm, 1ns),镀膜后该玻璃基片反射波前可达l /10(p-v),最终制备了超高阈值Pick-off反射镜。     

ZrO2/ SiO2多层膜的化学法制备研究

 分别以ZrOCl₂·8H₂O 和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法分别在K9玻璃和单晶硅片上制备了ZrO₂/ SiO₂多层膜。采用溶剂替换和紫外光处理等手段,有效地解决了ZrO₂/SiO₂多层膜中膜层开裂和膜间渗透等问题。应用扫描电子显微镜观测了薄膜的表面和剖面微观形貌,并用椭偏仪测得薄膜的厚度和折射率,研究了薄膜厚度、折射率与热处理温度、紫外光处理时间的关系,对所获得薄膜的紫外-可见、红外光谱进行了分析。用输出波长1064nm ,脉宽15ns 的电光调Q光系统产生的强激光进行了单层膜的辐照实验,结果发现溶剂替换后激光损伤阈值有所提高。     

高折射率光学薄膜的化学法制备研究

 报道了一种以ZrOC₁₂·8H₂O为源,溶胶-凝胶法制备高激光负载高折射率薄膜的新方法。薄膜采用旋转镀膜法制备,对薄膜的结构、光学特性及激光损伤阈值进行了测量,有机粘接剂对薄膜折射率及机械强度的影响也作了探讨。以该薄膜与SiO₂溶胶凝胶膜交替涂覆制成的多层高反膜,剩余透过率仅0.98%,激光损伤阈值达16J/cm²（3ns）。     

聚酰亚胺薄膜表面粗糙度的影响因素

 采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

Effect of annealing on the surface and band gap alignment of CdZnS thin films

Effects of the annealing temperature on structural, optical and surface properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction (XRD) results showed that the grown CdZnS thin films formed were polycrystalline with hexagonal structure. Atomic force microscopy (AFM) studies showed that the surface roughness of the CdZnS thin films was about 60-400 nm. Grain sizes of the CdZnS thin films varied between 70 and 300 nm as a function of annealing temperature. The root mean square surface roughness of the selected area, particular point, average roughness profile, topographical area of roughness were measured using the reported AFM software. The band gaps of CdZnS thin films were determined from absorbance measurements in the visible range as 300 nm and 1100 nm, respectively, using Tauc theory.     

二氧化硅增透膜微观结构与激光损伤阈值的调控

采用溶胶-凝胶技术制备了二氧化硅增透膜,通过向溶胶中添加高分子聚乙烯醇缩丁醛（PVB）,调控胶体的粒径,进而控制膜层微观结构,研究膜层微观结构与激光损伤阈值的关系。纳米粒度仪和扫描探针显微镜测试表明:PVB加入溶胶后,控制了二氧化硅胶粒的生长,使二氧化硅胶粒生长更均匀,因而膜层的微观结构更均匀。当PVB质量分数为1%时,胶体粒径为15 nm,分散系数小于0.1。用该胶体镀膜,膜层均匀,表面粗糙度小于3.25 nm。并且PVB加入后增加了膜层胶粒间的黏附性,使得膜层强度增大。PVB加入使膜层的激光损伤阈值有所增加。当PVB的添加量为1%时,膜层的激光损失阈值从30.0 J/cm2增加到40.1 J/cm2。膜层激光损伤阈值的增加与膜层微观均匀性和物理强度的增加有关。     

Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition

Indium tin oxide (ITO) films were produced by low-energy oxygen ion beam assisted electron-beam evaporation. The dependence of surface morphology, electrical and optical properties on evaporation rate, oxygen ion beam energy and density, as well as substrate temperatures was characterized by atomic force microscopy, X-ray photoelectron spectroscopy, Hall-effect and optical transmittance measurements. The results show that high-quality ITO films (resistivity of 7.0×10⁻⁴ Ω cm, optical transmittance above 85% at wavelength 550 nm, surface roughness of 0.6 nm in root mean square) can be obtained at room temperature.     

A high efficient antireflective down-conversion Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Bi<Superscript>3+</Superscript>, Yb<Superscript>3+</Superscript> thin films

The high efficient antireflective down-conversion Y₂O₃:Bi, Yb films have been prepared successfully on Si(100) substrates by pulsed laser deposition (PLD) method, Upon excitation of ultraviolet photon varying from 300 to 400 nm, near-infrared emission of Yb³⁺ was observed for the film, can be efficiently absorbed by silicon (Si) solar cell. Most interestingly, there is a very low average reflectivity 1.46% for the incident light from 300 to 1100 nm. To the best of our knowledge, this is the lowest reflectance for the down-conversion thin films prepared by cost efficient method. The surface topography of the high efficient antireflective films can be controllably tuned through the substrate template regulation by optimizing process parameters. Besides, the results showed that there is a close relationship between luminescent property and morphology of the film. With the change of the surface morphology, the intensity of Bi³⁺ and Yb³⁺ emission peaks increase first and then decrease. The obtained results demonstrate that this film can enhance the Si solar cell efficiency through light trapping and spectrum shifting.     

Morphological and optical properties of silicon thin films by PLD

Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10⁻⁶ mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm⁻² has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated.Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.     

Microstructural and optical properties of nanocrystalline undoped zirconia thin films prepared by pulsed laser deposition

The zirconium oxide (ZrO₂) thin films are deposited on Si (100) and quartz substrates at various substrate temperatures (room temperature–973 K) at an optimized oxygen partial pressure of 3×10^?2 mbar using pulsed laser deposition technique. The effect of substrate temperature on microstructural, optical and mechanical properties of the films is investigated. The X-ray diffraction studies show that the films deposited at temperatures ≤773 K are monoclinic, while the films deposited at temperatures ≥873 K show both monoclinic and tetragonal phases. Tetragonal phase content increases with the increase of substrate temperatures. The surface morphology and roughness are investigated using atomic force microscope in contact mode. The optical properties of the films show that the refractive indices (at 550 nm) are found to increase from 1.84 to 2.35 as the temperature raises from room temperature (RT) to 973 K. Nanoindentation measurements show that the hardness of the films is 11.8 and 13.7 GPa for the films deposited at 300 and 973 K, respectively.     

溶胶-凝胶双层三波长增透膜制备

通过理论模拟与实验相结合,研究了以双层膜的方式实现三波长增透的途径。以正硅酸乙酯为前驱体,采用酸催化与碱催化溶胶混合的方式调控了溶胶折射率,并配制了双层复合膜所用的两种溶胶,制备出了351nm处透过率大于99.5%,527nm透过率大于98%,1053nm透过率大于98%的三波长增透膜。用扫描电镜、原子力显微镜观测了膜层结构,用椭偏仪和分光光度计对膜层性能进行了表征。三波长增透膜对高功率激光装置的运行性能提升起到了积极的促进作用。     

Antireflective properties of disordered Si SWSs with hydrophobic surface by thermally dewetted Pt nanomask patterns for Si-based solar cells

We have theoretically and experimentally investigated the antireflective properties of the disordered subwavelength structures (SWSs) with a hydrophobic surface on silicon (Si) substrates by an inductively coupled plasma (ICP) etching in SiCl₄/Ar plasma using thermally dewetted platinum (Pt) nanopatterns as etch masks for Si-based solar cells. The Pt thin films on the SiO₂/Si surface were properly changed into the optimized dot-like nanopatterns via the thermal dewetting by rapid thermal annealing process. The antireflection properties were definitely affected by the etched profile of SWSs which can be controlled by the conditions of etching process. For the tapered Si SWS with a high average height of 724 ± 78 nm, the reflectance was significantly reduced below 5% over a wide wavelength range of 350-1030 nm, leading to a relatively low solar weighted reflectance of 2.6%. The structure exhibited reflectances less than 14.8% at wide incident angles of 8-70°. The hydrophobic surface with a water contact angle of 113.2° was obtained. For Si SWSs, the antireflective properties were also analyzed by the rigorous coupled-wave analysis simulation. These calculated results showed similar behavior to the experimental results.     

Effect of substrate morphology on the roughness evolution of ultra thin DLC films

The effect of substrate roughness on growth of ultra thin diamond-like carbon (DLC) films has been studied. The ultra thin DLC films have been deposited on silicon substrates with initial surface roughness of 0.15, 0.46 and 1.08 nm using a filted cathodic vacuum arc (FCVA) system. The films were characterized by Raman spectroscope, transmission electron microscope (TEM) and atomic force microscopy (AFM) to investigate the evolution of the surface roughness as a function of the film thickness. The experimental results show that the evolution of the surface morphology in an atomic scale depends on the initial surface morphology of the silicon substrate. For smooth silicon substrate (initial surface roughness of 0.15 nm), the surface roughness decreased with DLC thickness. However, for silicon substrate with initial surface roughness of 0.46 and 1.08 nm, the film surface roughness decreased first and then increased to a maximum and subsequently decreased again. The preferred growth of the valley and the island growth of DLC were employed to interpret the influence of substrate morphology on the evolution of DLC film roughness.